APTGF90DA60T1G

Microsemi Corporation APTGF90DA60T1G

Part Number:
APTGF90DA60T1G
Manufacturer:
Microsemi Corporation
Ventron No:
3587375-APTGF90DA60T1G
Description:
IGBT 600V 110A 416W SP1
ECAD Model:
Datasheet:
APTGF90DA60T1G

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Microsemi Corporation APTGF90DA60T1G technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APTGF90DA60T1G.
  • Mount
    Chassis Mount, Screw
  • Mounting Type
    Chassis Mount
  • Package / Case
    SP1
  • Number of Pins
    1
  • Transistor Element Material
    SILICON
  • Published
    2007
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    12
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN SILVER COPPER
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    416W
  • Terminal Position
    UPPER
  • Terminal Form
    THROUGH-HOLE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    12
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    Single
  • Case Connection
    ISOLATED
  • Power - Max
    416W
  • Transistor Application
    MOTOR CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Input
    Standard
  • Collector Emitter Voltage (VCEO)
    2.5V
  • Max Collector Current
    110A
  • Current - Collector Cutoff (Max)
    250μA
  • Collector Emitter Breakdown Voltage
    600V
  • Input Capacitance
    4.3nF
  • Turn On Time
    51 ns
  • Vce(on) (Max) @ Vge, Ic
    2.5V @ 15V, 90A
  • Turn Off Time-Nom (toff)
    210 ns
  • IGBT Type
    NPT
  • NTC Thermistor
    Yes
  • Gate-Emitter Voltage-Max
    20V
  • Input Capacitance (Cies) @ Vce
    4.3nF @ 25V
  • RoHS Status
    RoHS Compliant
Description
APTGF90DA60T1G Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet APTGF90DA60T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APTGF90DA60T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
APTGF90DA60T1G More Descriptions
Trans IGBT Module N-CH 600V 110A 12-Pin Case SP1
POWER IGBT TRANSISTOR
Product Comparison
The three parts on the right have similar specifications to APTGF90DA60T1G.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Elements
    Configuration
    Case Connection
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Input
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Current - Collector Cutoff (Max)
    Collector Emitter Breakdown Voltage
    Input Capacitance
    Turn On Time
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    IGBT Type
    NTC Thermistor
    Gate-Emitter Voltage-Max
    Input Capacitance (Cies) @ Vce
    RoHS Status
    Max Operating Temperature
    Min Operating Temperature
    JESD-30 Code
    Element Configuration
    Voltage - Collector Emitter Breakdown (Max)
    VCEsat-Max
    Radiation Hardening
    Lead Free
    View Compare
  • APTGF90DA60T1G
    APTGF90DA60T1G
    Chassis Mount, Screw
    Chassis Mount
    SP1
    1
    SILICON
    2007
    e1
    yes
    Obsolete
    1 (Unlimited)
    12
    EAR99
    TIN SILVER COPPER
    Insulated Gate BIP Transistors
    416W
    UPPER
    THROUGH-HOLE
    NOT SPECIFIED
    NOT SPECIFIED
    12
    Not Qualified
    1
    Single
    ISOLATED
    416W
    MOTOR CONTROL
    N-CHANNEL
    Standard
    2.5V
    110A
    250μA
    600V
    4.3nF
    51 ns
    2.5V @ 15V, 90A
    210 ns
    NPT
    Yes
    20V
    4.3nF @ 25V
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • APTGF150A120T3AG
    Chassis Mount, Screw
    Chassis Mount
    SP3
    20
    -
    -
    -
    -
    Obsolete
    1 (Unlimited)
    10
    EAR99
    -
    Insulated Gate BIP Transistors
    1.041kW
    UPPER
    UNSPECIFIED
    -
    -
    25
    -
    2
    Half Bridge
    ISOLATED
    1041W
    POWER CONTROL
    N-CHANNEL
    Standard
    1.2kV
    210A
    250μA
    1.2kV
    9.3nF
    190 ns
    3.7V @ 15V, 150A
    390 ns
    NPT
    Yes
    -
    9.3nF @ 25V
    RoHS Compliant
    150°C
    -40°C
    R-XUFM-X10
    Dual
    1200V
    3.7 V
    No
    Lead Free
  • APTGF300SK120G
    Chassis Mount, Screw
    Chassis Mount
    SP6
    5
    -
    2012
    e1
    yes
    Obsolete
    1 (Unlimited)
    5
    EAR99
    TIN SILVER COPPER
    Insulated Gate BIP Transistors
    1.78kW
    UPPER
    UNSPECIFIED
    -
    -
    5
    -
    1
    Single
    ISOLATED
    1780W
    MOTOR CONTROL
    N-CHANNEL
    Standard
    1.2kV
    400A
    500μA
    1.2kV
    21nF
    190 ns
    3.9V @ 15V, 300A
    400 ns
    NPT
    No
    20V
    21nF @ 25V
    RoHS Compliant
    150°C
    -40°C
    -
    -
    1200V
    3.9 V
    -
    -
  • APTGF30TL601G
    Chassis Mount, Screw
    Chassis Mount
    SP1
    12
    -
    2012
    -
    -
    Obsolete
    1 (Unlimited)
    -
    EAR99
    -
    Insulated Gate BIP Transistors
    140W
    -
    -
    -
    -
    -
    -
    1
    Three Level Inverter
    -
    -
    -
    -
    Standard
    600V
    42A
    250μA
    600V
    1.35nF
    -
    2.45V @ 15V, 30A
    -
    NPT
    No
    20V
    1.35nF @ 25V
    RoHS Compliant
    150°C
    -40°C
    -
    -
    -
    2.45 V
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.