IXYS MWI300-12E9
- Part Number:
- MWI300-12E9
- Manufacturer:
- IXYS
- Ventron No:
- 2854331-MWI300-12E9
- Description:
- MOD IGBT SIXPACK E
- Datasheet:
- MWI300-12E9
IXYS MWI300-12E9 technical specifications, attributes, parameters and parts with similar specifications to IXYS MWI300-12E9.
- MountChassis Mount
- Mounting TypeChassis Mount
- Package / CaseE
- Transistor Element MaterialSILICON
- Operating Temperature-40°C~125°C TJ
- PackagingBulk
- Published2010
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations17
- Terminal FinishTin (Sn) - with Nickel (Ni) barrier
- Additional FeatureUL RECOGNIZED
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation2.1kW
- Terminal PositionUPPER
- Terminal FormUNSPECIFIED
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberMWI
- Pin Count29
- JESD-30 CodeR-XUFM-X17
- Qualification StatusNot Qualified
- Number of Elements6
- ConfigurationThree Phase
- Case ConnectionISOLATED
- Power - Max2100W
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- InputStandard
- Collector Emitter Voltage (VCEO)2.4V
- Max Collector Current530A
- Current - Collector Cutoff (Max)1mA
- Collector Emitter Breakdown Voltage1.2kV
- Voltage - Collector Emitter Breakdown (Max)1200V
- Input Capacitance22nF
- Turn On Time280 ns
- Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 300A
- Turn Off Time-Nom (toff)770 ns
- IGBT TypeNPT
- NTC ThermistorYes
- Gate-Emitter Voltage-Max20V
- Input Capacitance (Cies) @ Vce22nF @ 25V
- RoHS StatusRoHS Compliant
MWI300-12E9 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet MWI300-12E9 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MWI300-12E9. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet MWI300-12E9 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MWI300-12E9. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MWI300-12E9 More Descriptions
IXYS Power Transistor Module
IGBT MODULE 1200V 530A 2100W E
Contact for details
MOD IGBT SIXPACK E
IGBT MODULE 1200V 530A 2100W E
Contact for details
MOD IGBT SIXPACK E
The three parts on the right have similar specifications to MWI300-12E9.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishAdditional FeatureSubcategoryMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationCase ConnectionPower - MaxTransistor ApplicationPolarity/Channel TypeInputCollector Emitter Voltage (VCEO)Max Collector CurrentCurrent - Collector Cutoff (Max)Collector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Input CapacitanceTurn On TimeVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)IGBT TypeNTC ThermistorGate-Emitter Voltage-MaxInput Capacitance (Cies) @ VceRoHS StatusFactory Lead TimeNumber of PinsCollector Emitter Saturation VoltageHeightLengthWidthLead FreeView Compare
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MWI300-12E9Chassis MountChassis MountESILICON-40°C~125°C TJBulk2010e3yesObsolete1 (Unlimited)17Tin (Sn) - with Nickel (Ni) barrierUL RECOGNIZEDInsulated Gate BIP Transistors2.1kWUPPERUNSPECIFIEDNOT SPECIFIEDNOT SPECIFIEDMWI29R-XUFM-X17Not Qualified6Three PhaseISOLATED2100WPOWER CONTROLN-CHANNELStandard2.4V530A1mA1.2kV1200V22nF280 ns2.4V @ 15V, 300A770 nsNPTYes20V22nF @ 25VRoHS Compliant--------
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Chassis MountChassis MountESILICON-40°C~125°C TJ-2007e3yesActive1 (Unlimited)17Matte Tin (Sn) - with Nickel (Ni) barrier-Insulated Gate BIP Transistors2.2kWUPPERUNSPECIFIEDNOT SPECIFIEDNOT SPECIFIEDMWI29R-XUFM-X17Not Qualified6Three PhaseISOLATED2200WPOWER CONTROLN-CHANNELStandard2.7V500A1mA1.7kV1700V33nF290 ns2.7V @ 15V, 300A610 nsNPTYes20V33nF @ 25VROHS3 Compliant16 Weeks29-----
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Chassis Mount, ScrewChassis MountE2SILICON-40°C~150°C TJBulk2000e3yesActive1 (Unlimited)19Matte Tin (Sn) - with Nickel (Ni) barrierULTRA FAST, LOW SWITCHING LOSS, LOW SATURATION VOLTAGE-280WUPPERUNSPECIFIEDNOT SPECIFIEDNOT SPECIFIEDMWI--Not Qualified6Three Phase InverterISOLATED280WMOTOR CONTROLN-CHANNELStandard1.2kV62A2mA1.2kV1200V2nF180 ns2.8V @ 15V, 35A570 nsNPTYes-2nF @ 25VROHS3 Compliant16 Weeks19-----
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Chassis MountChassis MountE2SILICON-40°C~150°C TJBulk2007e3yesActive1 (Unlimited)13Matte Tin (Sn) - with Nickel (Ni) barrierUL RECOGNIZEDInsulated Gate BIP Transistors140WUPPERUNSPECIFIEDNOT SPECIFIEDNOT SPECIFIEDMWI19R-XUFM-X13Not Qualified6Three Phase InverterISOLATED140WPOWER CONTROLN-CHANNELStandard2.4V45A600μA600V-1.6nF100 ns2.4V @ 15V, 30A310 nsNPTYes20V1.6nF @ 25VROHS3 Compliant20 Weeks18600V17mm107.5mm45mmLead Free
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