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MWI30-06A7T

IXYS MWI30-06A7T

Part Number:
MWI30-06A7T
Manufacturer:
IXYS
Ventron No:
2493447-MWI30-06A7T
Description:
MOD IGBT SIXPACK RBSOA 600V E2
ECAD Model:
Datasheet:
MWI30-06A7T

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Specifications
IXYS MWI30-06A7T technical specifications, attributes, parameters and parts with similar specifications to IXYS MWI30-06A7T.
  • Factory Lead Time
    20 Weeks
  • Mount
    Chassis Mount
  • Mounting Type
    Chassis Mount
  • Package / Case
    E2
  • Number of Pins
    18
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -40°C~150°C TJ
  • Packaging
    Bulk
  • Published
    2007
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    13
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Additional Feature
    UL RECOGNIZED
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    140W
  • Terminal Position
    UPPER
  • Terminal Form
    UNSPECIFIED
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    MWI
  • Pin Count
    19
  • JESD-30 Code
    R-XUFM-X13
  • Qualification Status
    Not Qualified
  • Number of Elements
    6
  • Configuration
    Three Phase Inverter
  • Case Connection
    ISOLATED
  • Power - Max
    140W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Input
    Standard
  • Collector Emitter Voltage (VCEO)
    2.4V
  • Max Collector Current
    45A
  • Current - Collector Cutoff (Max)
    600μA
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    600V
  • Input Capacitance
    1.6nF
  • Turn On Time
    100 ns
  • Vce(on) (Max) @ Vge, Ic
    2.4V @ 15V, 30A
  • Turn Off Time-Nom (toff)
    310 ns
  • IGBT Type
    NPT
  • NTC Thermistor
    Yes
  • Gate-Emitter Voltage-Max
    20V
  • Input Capacitance (Cies) @ Vce
    1.6nF @ 25V
  • Height
    17mm
  • Length
    107.5mm
  • Width
    45mm
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MWI30-06A7T Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet MWI30-06A7T or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MWI30-06A7T. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MWI30-06A7T More Descriptions
Trans IGBT Module N-CH 600V 45A 18-Pin E2
600V,30A IGBT (NPT), E2-Pack
MOD IGBT SIXPACK RBSOA 600V E2
IGBT MODULE 600V 45A 140W E2
Contact for details
Product Comparison
The three parts on the right have similar specifications to MWI30-06A7T.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Additional Feature
    Subcategory
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Case Connection
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Input
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Current - Collector Cutoff (Max)
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Input Capacitance
    Turn On Time
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    IGBT Type
    NTC Thermistor
    Gate-Emitter Voltage-Max
    Input Capacitance (Cies) @ Vce
    Height
    Length
    Width
    RoHS Status
    Lead Free
    Voltage - Collector Emitter Breakdown (Max)
    View Compare
  • MWI30-06A7T
    MWI30-06A7T
    IXYS
    20 Weeks
    Chassis Mount
    Chassis Mount
    E2
    18
    SILICON
    -40°C~150°C TJ
    Bulk
    2007
    e3
    yes
    Active
    1 (Unlimited)
    13
    Matte Tin (Sn) - with Nickel (Ni) barrier
    UL RECOGNIZED
    Insulated Gate BIP Transistors
    140W
    UPPER
    UNSPECIFIED
    NOT SPECIFIED
    NOT SPECIFIED
    MWI
    19
    R-XUFM-X13
    Not Qualified
    6
    Three Phase Inverter
    ISOLATED
    140W
    POWER CONTROL
    N-CHANNEL
    Standard
    2.4V
    45A
    600μA
    600V
    600V
    1.6nF
    100 ns
    2.4V @ 15V, 30A
    310 ns
    NPT
    Yes
    20V
    1.6nF @ 25V
    17mm
    107.5mm
    45mm
    ROHS3 Compliant
    Lead Free
    -
    -
  • MWI300-12E9
    MWI300-12E9
    IXYS
    -
    Chassis Mount
    Chassis Mount
    E
    -
    SILICON
    -40°C~125°C TJ
    Bulk
    2010
    e3
    yes
    Obsolete
    1 (Unlimited)
    17
    Tin (Sn) - with Nickel (Ni) barrier
    UL RECOGNIZED
    Insulated Gate BIP Transistors
    2.1kW
    UPPER
    UNSPECIFIED
    NOT SPECIFIED
    NOT SPECIFIED
    MWI
    29
    R-XUFM-X17
    Not Qualified
    6
    Three Phase
    ISOLATED
    2100W
    POWER CONTROL
    N-CHANNEL
    Standard
    2.4V
    530A
    1mA
    1.2kV
    -
    22nF
    280 ns
    2.4V @ 15V, 300A
    770 ns
    NPT
    Yes
    20V
    22nF @ 25V
    -
    -
    -
    RoHS Compliant
    -
    1200V
    MWI30-06A7T vs MWI300-12E9
  • MWI30-12E6K
    MWI30-12E6K
    IXYS
    -
    Chassis Mount
    Chassis Mount
    E1
    1
    SILICON
    -40°C~125°C TJ
    Bulk
    2007
    e3
    -
    Obsolete
    1 (Unlimited)
    19
    Tin (Sn)
    UL RECOGNIZED
    -
    130W
    UPPER
    UNSPECIFIED
    NOT SPECIFIED
    NOT SPECIFIED
    MWI
    23
    -
    Not Qualified
    6
    Three Phase Inverter
    ISOLATED
    130W
    POWER CONTROL
    N-CHANNEL
    Standard
    2.9V
    29A
    1mA
    1.2kV
    -
    1.18nF
    140 ns
    2.9V @ 15V, 20A
    410 ns
    -
    Yes
    -
    1.18nF @ 25V
    -
    -
    -
    RoHS Compliant
    -
    1200V
    MWI30-06A7T vs MWI30-12E6K
  • MWI300-17E9
    MWI300-17E9
    IXYS
    16 Weeks
    Chassis Mount
    Chassis Mount
    E
    29
    SILICON
    -40°C~125°C TJ
    -
    2007
    e3
    yes
    Active
    1 (Unlimited)
    17
    Matte Tin (Sn) - with Nickel (Ni) barrier
    -
    Insulated Gate BIP Transistors
    2.2kW
    UPPER
    UNSPECIFIED
    NOT SPECIFIED
    NOT SPECIFIED
    MWI
    29
    R-XUFM-X17
    Not Qualified
    6
    Three Phase
    ISOLATED
    2200W
    POWER CONTROL
    N-CHANNEL
    Standard
    2.7V
    500A
    1mA
    1.7kV
    -
    33nF
    290 ns
    2.7V @ 15V, 300A
    610 ns
    NPT
    Yes
    20V
    33nF @ 25V
    -
    -
    -
    ROHS3 Compliant
    -
    1700V
    MWI30-06A7T vs MWI300-17E9
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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