Microsemi Corporation APTGT75H60T3G
- Part Number:
- APTGT75H60T3G
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 3813787-APTGT75H60T3G
- Description:
- IGBT MOD TRENCH FULL BRIDGE SP3
- Datasheet:
- APTGT75H60T3G
Microsemi Corporation APTGT75H60T3G technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APTGT75H60T3G.
- Lifecycle StatusIN PRODUCTION (Last Updated: 3 weeks ago)
- Factory Lead Time36 Weeks
- MountChassis Mount, Screw
- Mounting TypeChassis Mount
- Package / CaseSP3
- Number of Pins32
- Transistor Element MaterialSILICON
- Operating Temperature-40°C~175°C TJ
- Published2006
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations25
- ECCN CodeEAR99
- Terminal FinishTIN SILVER COPPER
- Max Power Dissipation250W
- Terminal PositionUPPER
- Terminal FormUNSPECIFIED
- Pin Count25
- JESD-30 CodeR-XUFM-X25
- Number of Elements4
- ConfigurationFull Bridge Inverter
- Case ConnectionISOLATED
- Power - Max250W
- Transistor ApplicationMOTOR CONTROL
- Polarity/Channel TypeN-CHANNEL
- InputStandard
- Collector Emitter Voltage (VCEO)600V
- Max Collector Current100A
- Current - Collector Cutoff (Max)250μA
- Collector Emitter Breakdown Voltage600V
- Input Capacitance4.62nF
- Turn On Time170 ns
- Vce(on) (Max) @ Vge, Ic1.9V @ 15V, 75A
- Turn Off Time-Nom (toff)310 ns
- IGBT TypeTrench Field Stop
- NTC ThermistorYes
- Input Capacitance (Cies) @ Vce4.62nF @ 25V
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
APTGT75H60T3G Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet APTGT75H60T3G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APTGT75H60T3G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet APTGT75H60T3G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APTGT75H60T3G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
APTGT75H60T3G More Descriptions
Pm-Igbt-Tfs-Sp3 Sp3F Tube Rohs Compliant: Yes |Microchip APTGT75H60T3G
Trans IGBT Module N-CH 600V 100A 32-Pin Case SP-3
High Voltage Power Module, Full bridge, 600V, RoHSMicrochip SCT
IGBT MOD TRENCH FULL BRIDGE SP3
IGBT MODULE 600V 100A 250W SP3
Trans IGBT Module N-CH 600V 100A 32-Pin Case SP-3
High Voltage Power Module, Full bridge, 600V, RoHSMicrochip SCT
IGBT MOD TRENCH FULL BRIDGE SP3
IGBT MODULE 600V 100A 250W SP3
The three parts on the right have similar specifications to APTGT75H60T3G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Power DissipationTerminal PositionTerminal FormPin CountJESD-30 CodeNumber of ElementsConfigurationCase ConnectionPower - MaxTransistor ApplicationPolarity/Channel TypeInputCollector Emitter Voltage (VCEO)Max Collector CurrentCurrent - Collector Cutoff (Max)Collector Emitter Breakdown VoltageInput CapacitanceTurn On TimeVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)IGBT TypeNTC ThermistorInput Capacitance (Cies) @ VceRadiation HardeningRoHS StatusMax Operating TemperatureMin Operating TemperatureSubcategoryVoltage - Collector Emitter Breakdown (Max)Gate-Emitter Voltage-MaxVCEsat-MaxElement ConfigurationView Compare
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APTGT75H60T3GIN PRODUCTION (Last Updated: 3 weeks ago)36 WeeksChassis Mount, ScrewChassis MountSP332SILICON-40°C~175°C TJ2006e1yesActive1 (Unlimited)25EAR99TIN SILVER COPPER250WUPPERUNSPECIFIED25R-XUFM-X254Full Bridge InverterISOLATED250WMOTOR CONTROLN-CHANNELStandard600V100A250μA600V4.62nF170 ns1.9V @ 15V, 75A310 nsTrench Field StopYes4.62nF @ 25VNoRoHS Compliant--------
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--Chassis Mount, ScrewChassis MountSP65--2012e1yesObsolete1 (Unlimited)5EAR99TIN SILVER COPPER1.78kWUPPERUNSPECIFIED5-1SingleISOLATED1780WMOTOR CONTROLN-CHANNELStandard1.2kV400A500μA1.2kV21nF190 ns3.9V @ 15V, 300A400 nsNPTNo21nF @ 25V-RoHS Compliant150°C-40°CInsulated Gate BIP Transistors1200V20V3.9 V-
-
--Chassis Mount, ScrewChassis MountSP112--2012--Obsolete1 (Unlimited)-EAR99-140W----1Three Level Inverter----Standard600V42A250μA600V1.35nF-2.45V @ 15V, 30A-NPTNo1.35nF @ 25V-RoHS Compliant150°C-40°CInsulated Gate BIP Transistors-20V2.45 V-
-
--Chassis Mount, ScrewChassis MountSP218--2012--Obsolete1 (Unlimited)-EAR99-568W----1Half Bridge----Standard1.2kV135A250μA1.2kV6.5nF-3.7V @ 15V, 100A-NPTNo6.5nF @ 25V-RoHS Compliant150°C-40°CInsulated Gate BIP Transistors1200V20V3.7 VDual
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