ON Semiconductor MUN5330DW1T1G
- Part Number:
- MUN5330DW1T1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2461919-MUN5330DW1T1G
- Description:
- TRANS PREBIAS NPN/PNP SOT363
- Datasheet:
- MUN5330DW1T1G
ON Semiconductor MUN5330DW1T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MUN5330DW1T1G.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Surface MountYES
- Number of Pins6
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureBUILT-IN BIAS RESISTOR RATIO 1
- SubcategoryBIP General Purpose Small Signal
- Voltage - Rated DC50V
- Max Power Dissipation250mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating100mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMUN53**DW1
- Pin Count6
- Max Output Current100mA
- Operating Supply Voltage50V
- Number of Elements2
- PolarityNPN, PNP
- Element ConfigurationDual
- Power Dissipation187mW
- Transistor ApplicationSWITCHING
- Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce3 @ 5mA 10V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 5mA, 10mA
- Collector Emitter Breakdown Voltage50V
- Max Frequency10kHz
- Collector Emitter Saturation Voltage250mV
- Max Breakdown Voltage50V
- Collector Base Voltage (VCBO)50V
- Emitter Base Voltage (VEBO)6V
- hFE Min3
- Resistor - Base (R1)1k Ω
- Continuous Collector Current100mA
- Resistor - Emitter Base (R2)1k Ω
- Height1mm
- Length2.2mm
- Width1.35mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MUN5330DW1T1G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet MUN5330DW1T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MUN5330DW1T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet MUN5330DW1T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MUN5330DW1T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MUN5330DW1T1G More Descriptions
Trans Digital BJT NPN/PNP 50V 100mA Automotive 6-Pin SC-88 T/R
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
MUN Series 50 V 100 mA 1 kOhm NPN/PNP Dual Bias Resistor Transistor - SOT-363
ON Semi MUN5330DW1T1G Dual NPN PNP Bipolar Transistor,0.1 A,50V,6-Pin SOT-363 | ON Semiconductor MUN5330DW1T1G
Complementary Bipolar Digital Transistor (BRT)
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Transistor, AEC-Q101, NPN/PNP, 50V; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous
Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:1Kohm; Base Emitter Resistor R2:1Kohm Rohs Compliant: Yes |Onsemi MUN5330DW1T1G.
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5311DW1T1 series two complementary BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium.
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
MUN Series 50 V 100 mA 1 kOhm NPN/PNP Dual Bias Resistor Transistor - SOT-363
ON Semi MUN5330DW1T1G Dual NPN PNP Bipolar Transistor,0.1 A,50V,6-Pin SOT-363 | ON Semiconductor MUN5330DW1T1G
Complementary Bipolar Digital Transistor (BRT)
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Transistor, AEC-Q101, NPN/PNP, 50V; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous
Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:1Kohm; Base Emitter Resistor R2:1Kohm Rohs Compliant: Yes |Onsemi MUN5330DW1T1G.
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5311DW1T1 series two complementary BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium.
The three parts on the right have similar specifications to MUN5330DW1T1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountMax Output CurrentOperating Supply VoltageNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageMax FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinResistor - Base (R1)Continuous Collector CurrentResistor - Emitter Base (R2)HeightLengthWidthRadiation HardeningRoHS StatusLead FreeMountReach Compliance CodeJESD-30 CodeQualification StatusTransistor Element MaterialConfigurationPower - MaxPolarity/Channel TypeView Compare
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MUN5330DW1T1GACTIVE (Last Updated: 2 days ago)8 WeeksSurface Mount6-TSSOP, SC-88, SOT-363YES6Tape & Reel (TR)2006e3yesActive1 (Unlimited)6EAR99Tin (Sn)150°C-55°CBUILT-IN BIAS RESISTOR RATIO 1BIP General Purpose Small Signal50V250mWGULL WING260100mA40MUN53**DW16100mA50V2NPN, PNPDual187mWSWITCHING1 NPN, 1 PNP - Pre-Biased (Dual)50V100mA3 @ 5mA 10V500nA250mV @ 5mA, 10mA50V10kHz250mV50V50V6V31k Ω100mA1k Ω1mm2.2mm1.35mmNoROHS3 CompliantLead Free---------
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--Surface Mount6-TSSOP, SC-88, SOT-363--Tape & Reel (TR)2009e0-Obsolete1 (Unlimited)6EAR99Tin/Lead (Sn80Pb20)150°C-55°CBUILT-IN BIAS RESISTORBIP General Purpose Small Signal50V250mWGULL WING240100mA30MUN53**DW16--2NPN, PNPDual187mWSWITCHING1 NPN, 1 PNP - Pre-Biased (Dual)250mV100mA160 @ 5mA 10V500nA250mV @ 1mA, 10mA50V------4.7k Ω100mA-----Non-RoHS CompliantContains LeadSurface Mountnot_compliantR-PDSO-G6Not Qualified----
-
--Surface Mount6-TSSOP, SC-88, SOT-363-6Tape & Reel (TR)2005e0-Obsolete1 (Unlimited)6EAR99Tin/Lead (Sn/Pb)150°C-55°CBUILT IN BIAS RESISTOR RATIO IS 2.14BIP General Purpose Small Signal50V250mWGULL WING240100mA30MUN52**DW1T6--2NPNDual187mWSWITCHING2 NPN - Pre-Biased (Dual)50V100mA80 @ 5mA 10V500nA250mV @ 1mA, 10mA50V------22k Ω100mA47k Ω----Non-RoHS CompliantContains LeadSurface Mountnot_compliant-Not Qualified----
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--Surface Mount6-TSSOP, SC-88, SOT-363--Tape & Reel (TR)2005e0-Obsolete1 (Unlimited)6EAR99Tin/Lead (Sn/Pb)--BUILT-IN BIAS RESISTOR RATIO IS 1BIP General Purpose Small Signal-50V250mWGULL WING240-100mA30MUN51**DW1T6--2---SWITCHING2 PNP - Pre-Biased (Dual)250mV100mA80 @ 5mA 10V500nA250mV @ 300μA, 10mA50V------100k Ω-100k Ω----Non-RoHS CompliantContains LeadSurface Mountnot_compliantR-PDSO-G6Not QualifiedSILICONSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR250mWPNP
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