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MUN5136DW1T1

ON Semiconductor MUN5136DW1T1

Part Number:
MUN5136DW1T1
Manufacturer:
ON Semiconductor
Ventron No:
2844689-MUN5136DW1T1
Description:
TRANS 2PNP PREBIAS 0.25W SOT363
ECAD Model:
Datasheet:
MUN51xxDW1T1 Series

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Specifications
ON Semiconductor MUN5136DW1T1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MUN5136DW1T1.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Transistor Element Material
    SILICON
  • Packaging
    Tape & Reel (TR)
  • Published
    2005
  • JESD-609 Code
    e0
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Additional Feature
    BUILT-IN BIAS RESISTOR RATIO IS 1
  • Subcategory
    BIP General Purpose Small Signal
  • Voltage - Rated DC
    -50V
  • Max Power Dissipation
    250mW
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    240
  • Reach Compliance Code
    not_compliant
  • Current Rating
    -100mA
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    MUN51**DW1T
  • Pin Count
    6
  • JESD-30 Code
    R-PDSO-G6
  • Qualification Status
    Not Qualified
  • Number of Elements
    2
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
  • Power - Max
    250mW
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    PNP
  • Transistor Type
    2 PNP - Pre-Biased (Dual)
  • Collector Emitter Voltage (VCEO)
    250mV
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 5mA 10V
  • Current - Collector Cutoff (Max)
    500nA
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 300μA, 10mA
  • Collector Emitter Breakdown Voltage
    50V
  • Resistor - Base (R1)
    100k Ω
  • Resistor - Emitter Base (R2)
    100k Ω
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
MUN5136DW1T1 Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet MUN5136DW1T1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MUN5136DW1T1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MUN5136DW1T1 More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
TRANS 2PNP PREBIAS 0.25W SOT363
OEMs, CMs ONLY (NO BROKERS)
Product Comparison
The three parts on the right have similar specifications to MUN5136DW1T1.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Transistor Element Material
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Resistor - Base (R1)
    Resistor - Emitter Base (R2)
    RoHS Status
    Lead Free
    Max Operating Temperature
    Min Operating Temperature
    Polarity
    Element Configuration
    Power Dissipation
    Continuous Collector Current
    Number of Pins
    Lifecycle Status
    Factory Lead Time
    Surface Mount
    Pbfree Code
    hFE Min
    Radiation Hardening
    View Compare
  • MUN5136DW1T1
    MUN5136DW1T1
    ON Semiconductor
    Surface Mount
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    SILICON
    Tape & Reel (TR)
    2005
    e0
    Obsolete
    1 (Unlimited)
    6
    EAR99
    Tin/Lead (Sn/Pb)
    BUILT-IN BIAS RESISTOR RATIO IS 1
    BIP General Purpose Small Signal
    -50V
    250mW
    GULL WING
    240
    not_compliant
    -100mA
    30
    MUN51**DW1T
    6
    R-PDSO-G6
    Not Qualified
    2
    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
    250mW
    SWITCHING
    PNP
    2 PNP - Pre-Biased (Dual)
    250mV
    100mA
    80 @ 5mA 10V
    500nA
    250mV @ 300μA, 10mA
    50V
    100k Ω
    100k Ω
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MUN5316DW1T1
    MUN5316DW1T1
    ON Semiconductor
    Surface Mount
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    -
    Tape & Reel (TR)
    2009
    e0
    Obsolete
    1 (Unlimited)
    6
    EAR99
    Tin/Lead (Sn80Pb20)
    BUILT-IN BIAS RESISTOR
    BIP General Purpose Small Signal
    50V
    250mW
    GULL WING
    240
    not_compliant
    100mA
    30
    MUN53**DW1
    6
    R-PDSO-G6
    Not Qualified
    2
    -
    -
    SWITCHING
    -
    1 NPN, 1 PNP - Pre-Biased (Dual)
    250mV
    100mA
    160 @ 5mA 10V
    500nA
    250mV @ 1mA, 10mA
    50V
    4.7k Ω
    -
    Non-RoHS Compliant
    Contains Lead
    150°C
    -55°C
    NPN, PNP
    Dual
    187mW
    100mA
    -
    -
    -
    -
    -
    -
    -
    MUN5136DW1T1 vs MUN5316DW1T1
  • MUN5234DW1T1
    MUN5234DW1T1
    ON Semiconductor
    Surface Mount
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    -
    Tape & Reel (TR)
    2005
    e0
    Obsolete
    1 (Unlimited)
    6
    EAR99
    Tin/Lead (Sn/Pb)
    BUILT IN BIAS RESISTOR RATIO IS 2.14
    BIP General Purpose Small Signal
    50V
    250mW
    GULL WING
    240
    not_compliant
    100mA
    30
    MUN52**DW1T
    6
    -
    Not Qualified
    2
    -
    -
    SWITCHING
    -
    2 NPN - Pre-Biased (Dual)
    50V
    100mA
    80 @ 5mA 10V
    500nA
    250mV @ 1mA, 10mA
    50V
    22k Ω
    47k Ω
    Non-RoHS Compliant
    Contains Lead
    150°C
    -55°C
    NPN
    Dual
    187mW
    100mA
    6
    -
    -
    -
    -
    -
    -
    MUN5136DW1T1 vs MUN5234DW1T1
  • MUN5332DW1T1G
    MUN5332DW1T1G
    ON Semiconductor
    -
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    -
    Tape & Reel (TR)
    2012
    e3
    Obsolete
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    BUILT-IN BIAS RESISTOR RATIO 1
    BIP General Purpose Small Signal
    50V
    250mW
    GULL WING
    260
    -
    100mA
    40
    MUN53**DW1
    6
    -
    -
    2
    -
    -
    SWITCHING
    -
    1 NPN, 1 PNP - Pre-Biased (Dual)
    50V
    100mA
    15 @ 5mA 10V
    500nA
    250mV @ 1mA, 10mA
    50V
    4.7k Ω
    4.7k Ω
    RoHS Compliant
    Lead Free
    150°C
    -55°C
    NPN, PNP
    Dual
    187mW
    100mA
    6
    ACTIVE (Last Updated: 1 day ago)
    2 Weeks
    YES
    yes
    15
    No
    MUN5136DW1T1 vs MUN5332DW1T1G
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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