MUN5212DW1T1

ON Semiconductor MUN5212DW1T1

Part Number:
MUN5212DW1T1
Manufacturer:
ON Semiconductor
Ventron No:
2844950-MUN5212DW1T1
Description:
TRANS 2NPN PREBIAS 0.25W SOT363
ECAD Model:
Datasheet:
MUN5211DW1T1 Series

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Specifications
ON Semiconductor MUN5212DW1T1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MUN5212DW1T1.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Number of Pins
    6
  • Packaging
    Tape & Reel (TR)
  • Published
    2005
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Additional Feature
    BUILT-IN BIAS RESISTOR RATIO IS 1
  • Subcategory
    BIP General Purpose Small Signal
  • Voltage - Rated DC
    50V
  • Max Power Dissipation
    250mW
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    100mA
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MUN52**DW1T
  • Pin Count
    6
  • Qualification Status
    Not Qualified
  • Number of Elements
    2
  • Polarity
    NPN
  • Element Configuration
    Dual
  • Power Dissipation
    187mW
  • Transistor Application
    SWITCHING
  • Transistor Type
    2 NPN - Pre-Biased (Dual)
  • Collector Emitter Voltage (VCEO)
    250mV
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    60 @ 5mA 10V
  • Current - Collector Cutoff (Max)
    500nA
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 300μA, 10mA
  • Collector Emitter Breakdown Voltage
    50V
  • Resistor - Base (R1)
    22k Ω
  • Continuous Collector Current
    100mA
  • Resistor - Emitter Base (R2)
    22k Ω
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
MUN5212DW1T1 Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet MUN5212DW1T1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MUN5212DW1T1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MUN5212DW1T1 More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
Tape & Reel (TR) Surface Mount 2NPN - Pre-Biased (Dual) Dual Pre-Biased Bipolar Transistor (BJT) 60 @ 5mA 10V 100mA 250mW 50V
TRANS 2NPN PREBIAS 0.25W SOT363;
Product Comparison
The three parts on the right have similar specifications to MUN5212DW1T1.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Max Operating Temperature
    Min Operating Temperature
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Qualification Status
    Number of Elements
    Polarity
    Element Configuration
    Power Dissipation
    Transistor Application
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Resistor - Base (R1)
    Continuous Collector Current
    Resistor - Emitter Base (R2)
    RoHS Status
    Lead Free
    Reach Compliance Code
    Lifecycle Status
    Factory Lead Time
    Surface Mount
    hFE Min
    Radiation Hardening
    Transistor Element Material
    JESD-30 Code
    Configuration
    Power - Max
    Polarity/Channel Type
    View Compare
  • MUN5212DW1T1
    MUN5212DW1T1
    Surface Mount
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    6
    Tape & Reel (TR)
    2005
    e3
    yes
    Obsolete
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    150°C
    -55°C
    BUILT-IN BIAS RESISTOR RATIO IS 1
    BIP General Purpose Small Signal
    50V
    250mW
    GULL WING
    260
    100mA
    40
    MUN52**DW1T
    6
    Not Qualified
    2
    NPN
    Dual
    187mW
    SWITCHING
    2 NPN - Pre-Biased (Dual)
    250mV
    100mA
    60 @ 5mA 10V
    500nA
    250mV @ 300μA, 10mA
    50V
    22k Ω
    100mA
    22k Ω
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MUN5234DW1T1
    Surface Mount
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    6
    Tape & Reel (TR)
    2005
    e0
    -
    Obsolete
    1 (Unlimited)
    6
    EAR99
    Tin/Lead (Sn/Pb)
    150°C
    -55°C
    BUILT IN BIAS RESISTOR RATIO IS 2.14
    BIP General Purpose Small Signal
    50V
    250mW
    GULL WING
    240
    100mA
    30
    MUN52**DW1T
    6
    Not Qualified
    2
    NPN
    Dual
    187mW
    SWITCHING
    2 NPN - Pre-Biased (Dual)
    50V
    100mA
    80 @ 5mA 10V
    500nA
    250mV @ 1mA, 10mA
    50V
    22k Ω
    100mA
    47k Ω
    Non-RoHS Compliant
    Contains Lead
    not_compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MUN5332DW1T1G
    -
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    6
    Tape & Reel (TR)
    2012
    e3
    yes
    Obsolete
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    150°C
    -55°C
    BUILT-IN BIAS RESISTOR RATIO 1
    BIP General Purpose Small Signal
    50V
    250mW
    GULL WING
    260
    100mA
    40
    MUN53**DW1
    6
    -
    2
    NPN, PNP
    Dual
    187mW
    SWITCHING
    1 NPN, 1 PNP - Pre-Biased (Dual)
    50V
    100mA
    15 @ 5mA 10V
    500nA
    250mV @ 1mA, 10mA
    50V
    4.7k Ω
    100mA
    4.7k Ω
    RoHS Compliant
    Lead Free
    -
    ACTIVE (Last Updated: 1 day ago)
    2 Weeks
    YES
    15
    No
    -
    -
    -
    -
    -
  • MUN5136DW1T1
    Surface Mount
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    -
    Tape & Reel (TR)
    2005
    e0
    -
    Obsolete
    1 (Unlimited)
    6
    EAR99
    Tin/Lead (Sn/Pb)
    -
    -
    BUILT-IN BIAS RESISTOR RATIO IS 1
    BIP General Purpose Small Signal
    -50V
    250mW
    GULL WING
    240
    -100mA
    30
    MUN51**DW1T
    6
    Not Qualified
    2
    -
    -
    -
    SWITCHING
    2 PNP - Pre-Biased (Dual)
    250mV
    100mA
    80 @ 5mA 10V
    500nA
    250mV @ 300μA, 10mA
    50V
    100k Ω
    -
    100k Ω
    Non-RoHS Compliant
    Contains Lead
    not_compliant
    -
    -
    -
    -
    -
    SILICON
    R-PDSO-G6
    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
    250mW
    PNP
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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