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MT47H64M16NF-187E:M

Micron Technology Inc. MT47H64M16NF-187E:M

Part Number:
MT47H64M16NF-187E:M
Manufacturer:
Micron Technology Inc.
Ventron No:
3232166-MT47H64M16NF-187E:M
Description:
IC SDRAM 1GBIT 533MHZ 84FBGA
ECAD Model:
Datasheet:
MT47H64M16NF-187E:M

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Specifications
Micron Technology Inc. MT47H64M16NF-187E:M technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT47H64M16NF-187E:M.
  • Factory Lead Time
    12 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    84-TFBGA
  • Surface Mount
    YES
  • Number of Pins
    84
  • Operating Temperature
    0°C~85°C TC
  • Packaging
    Bulk
  • Published
    2014
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Number of Terminations
    84
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN SILVER COPPER
  • Additional Feature
    AUTO/SELF REFRESH
  • HTS Code
    8542.32.00.32
  • Technology
    SDRAM - DDR2
  • Voltage - Supply
    1.7V~1.9V
  • Terminal Position
    BOTTOM
  • Peak Reflow Temperature (Cel)
    260
  • Number of Functions
    1
  • Supply Voltage
    1.8V
  • Terminal Pitch
    0.8mm
  • Reflow Temperature-Max (s)
    30
  • Base Part Number
    MT47H64M16
  • Pin Count
    84
  • Operating Supply Voltage
    1.8V
  • Supply Voltage-Max (Vsup)
    1.9V
  • Supply Voltage-Min (Vsup)
    1.7V
  • Memory Size
    1Gb 64M x 16
  • Number of Ports
    1
  • Memory Type
    Volatile
  • Access Time
    350ps
  • Memory Format
    DRAM
  • Memory Interface
    Parallel
  • Data Bus Width
    16b
  • Organization
    64MX16
  • Output Characteristics
    3-STATE
  • Memory Width
    16
  • Write Cycle Time - Word, Page
    15ns
  • Address Bus Width
    13b
  • Density
    1 Gb
  • Max Frequency
    533MHz
  • I/O Type
    COMMON
  • Refresh Cycles
    8192
  • Sequential Burst Length
    48
  • Interleaved Burst Length
    48
  • Height Seated (Max)
    1.2mm
  • Length
    12.5mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
MT47H64M16NF-187E:M Overview
The 84-pin DDR3 SDRAM module, published in 2014, is packaged in bulk and offers a memory interface that operates in parallel. With a terminal position at the bottom, this module provides 84 terminations for efficient connectivity. The voltage supply ranges from 1.7V to 1.9V, ensuring stable performance. Additionally, the reflow temperature-max (s) is set at 30, ensuring that the module can withstand high temperatures during the manufacturing process. With an operating supply voltage of 1.8V, this module is designed to deliver reliable and efficient performance. It also boasts a maximum frequency of 533MHz, allowing for fast data transfer and processing.

MT47H64M16NF-187E:M Features
Package / Case: 84-TFBGA
84 Pins
Operating Supply Voltage:1.8V
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON

MT47H64M16NF-187E:M Applications
There are a lot of Micron Technology Inc. MT47H64M16NF-187E:M Memory applications.

Camcorders
personal computers
networking
personal digital assistants
telecommunications
nonvolatile BIOS memory
hard disk drive (HDD)
multimedia computers
mainframes
cell phones
MT47H64M16NF-187E:M More Descriptions
DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V 84-Pin FBGA
DDR2 SDRAM 64MX16 PLASTIC GREEN FBGA 1.8V COMMERCIAL
DRAM, DDR2 SDRAM, 1Gb, x16, 84-ball FBGA, RoHSMicron SCT
MAX16931 OFFER TWO HIGH-VOLTAGE,
Product Comparison
The three parts on the right have similar specifications to MT47H64M16NF-187E:M.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    HTS Code
    Technology
    Voltage - Supply
    Terminal Position
    Peak Reflow Temperature (Cel)
    Number of Functions
    Supply Voltage
    Terminal Pitch
    Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Operating Supply Voltage
    Supply Voltage-Max (Vsup)
    Supply Voltage-Min (Vsup)
    Memory Size
    Number of Ports
    Memory Type
    Access Time
    Memory Format
    Memory Interface
    Data Bus Width
    Organization
    Output Characteristics
    Memory Width
    Write Cycle Time - Word, Page
    Address Bus Width
    Density
    Max Frequency
    I/O Type
    Refresh Cycles
    Sequential Burst Length
    Interleaved Burst Length
    Height Seated (Max)
    Length
    Radiation Hardening
    RoHS Status
    Series
    Clock Frequency
    View Compare
  • MT47H64M16NF-187E:M
    MT47H64M16NF-187E:M
    Micron Technology Inc.
    12 Weeks
    Surface Mount
    84-TFBGA
    YES
    84
    0°C~85°C TC
    Bulk
    2014
    e1
    yes
    Not For New Designs
    3 (168 Hours)
    84
    EAR99
    TIN SILVER COPPER
    AUTO/SELF REFRESH
    8542.32.00.32
    SDRAM - DDR2
    1.7V~1.9V
    BOTTOM
    260
    1
    1.8V
    0.8mm
    30
    MT47H64M16
    84
    1.8V
    1.9V
    1.7V
    1Gb 64M x 16
    1
    Volatile
    350ps
    DRAM
    Parallel
    16b
    64MX16
    3-STATE
    16
    15ns
    13b
    1 Gb
    533MHz
    COMMON
    8192
    48
    48
    1.2mm
    12.5mm
    No
    ROHS3 Compliant
    -
    -
    -
  • MT47H64M16NF-25E IT:M TR
    MT47H64M16NF-25E IT:M TR
    Micron Technology Inc.
    111 Weeks
    Surface Mount
    84-TFBGA
    -
    -
    -40°C~85°C TA
    Tape & Reel (TR)
    -
    -
    -
    Active
    3 (168 Hours)
    -
    -
    -
    -
    -
    SDRAM - DDR2
    1.7V~1.9V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    1Gb 64M x 16
    -
    Volatile
    400ps
    DRAM
    Parallel
    -
    -
    -
    -
    15ns
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Automotive, AEC-Q100
    400MHz
    MT47H64M16NF-187E:M vs MT47H64M16NF-25E IT:M TR
  • MT47H64M8SH-25E:H TR
    MT47H64M8SH-25E:H TR
    Micron Technology Inc.
    111 Weeks
    Surface Mount
    60-TFBGA
    -
    -
    0°C~85°C TC
    Tape & Reel (TR)
    -
    -
    -
    Active
    3 (168 Hours)
    -
    -
    -
    -
    -
    SDRAM - DDR2
    1.7V~1.9V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    512M 64M x 8
    -
    Volatile
    400ps
    DRAM
    Parallel
    -
    -
    -
    -
    15ns
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    400MHz
    MT47H64M16NF-187E:M vs MT47H64M8SH-25E:H TR
  • MT47H256M4SH-25E:M TR
    MT47H256M4SH-25E:M TR
    Micron Technology Inc.
    16 Weeks
    Surface Mount
    60-TFBGA
    -
    -
    0°C~85°C TC
    Tape & Reel (TR)
    -
    -
    -
    Active
    3 (168 Hours)
    -
    -
    -
    -
    -
    SDRAM - DDR2
    1.7V~1.9V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    1Gb 256M x 4
    -
    Volatile
    400ps
    DRAM
    Parallel
    -
    -
    -
    -
    15ns
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    400MHz
    MT47H64M16NF-187E:M vs MT47H256M4SH-25E:M TR
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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