Micron Technology Inc. MT47H32M16NF-25E IT:H
- Part Number:
- MT47H32M16NF-25E IT:H
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3721093-MT47H32M16NF-25E IT:H
- Description:
- IC SDRAM 512MBIT 400MHZ 84FBGA
- ECAD Model:
-
- Datasheet:
- MT47H32M16NF-25E IT:H
Micron Technology Inc. MT47H32M16NF-25E IT:H technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT47H32M16NF-25E IT:H.
- Factory Lead Time9 Weeks
- Mounting TypeSurface Mount
- Package / Case84-TFBGA
- Surface MountYES
- Operating Temperature-40°C~95°C TC
- PackagingTray
- Published2014
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations84
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Additional FeatureAUTO/SELF REFRESH
- HTS Code8542.32.00.28
- TechnologySDRAM - DDR2
- Voltage - Supply1.7V~1.9V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch0.8mm
- Reflow Temperature-Max (s)30
- Base Part NumberMT47H32M16
- Pin Count84
- JESD-30 CodeR-PBGA-B84
- Qualification StatusNot Qualified
- Supply Voltage-Max (Vsup)1.9V
- Power Supplies1.8V
- Supply Voltage-Min (Vsup)1.7V
- Memory Size512Mb 32M x 16
- Number of Ports1
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency400MHz
- Supply Current-Max0.215mA
- Access Time400ps
- Memory FormatDRAM
- Memory InterfaceParallel
- Organization32MX16
- Output Characteristics3-STATE
- Memory Width16
- Write Cycle Time - Word, Page15ns
- Standby Current-Max0.01A
- Memory Density536870912 bit
- I/O TypeCOMMON
- Refresh Cycles8192
- Sequential Burst Length48
- Interleaved Burst Length48
- Height Seated (Max)1.2mm
- Length12.5mm
- Width8mm
- RoHS StatusROHS3 Compliant
MT47H32M16NF-25E IT:H Overview
The JESD-609 Code for this product is e1, indicating its compliance with industry standards. It is also Pbfree, meaning it does not contain any lead. The Part Status is Active, indicating that it is currently being produced and available for purchase. However, it is not yet Qualified for use in specific applications. This product is a Volatile Memory Type, meaning that it requires power to retain data. It has a Clock Frequency of 400MHz, allowing for fast data processing. The Supply Current-Max is 0.215mA, indicating its low power consumption. The Memory Width is 16, indicating the number of bits that can be accessed at one time. The Standby Current-Max is 0.01A, indicating its low power usage when not in use. Finally, it has a Refresh Cycles of 8192, indicating the number of times the memory must be refreshed to retain data.
MT47H32M16NF-25E IT:H Features
Package / Case: 84-TFBGA
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
MT47H32M16NF-25E IT:H Applications
There are a lot of Micron Technology Inc. MT47H32M16NF-25E IT:H Memory applications.
personal digital assistants
main computer memory
personal computers
embedded logic
servers
printers
networks
multimedia computers
nonvolatile BIOS memory
data buffer
The JESD-609 Code for this product is e1, indicating its compliance with industry standards. It is also Pbfree, meaning it does not contain any lead. The Part Status is Active, indicating that it is currently being produced and available for purchase. However, it is not yet Qualified for use in specific applications. This product is a Volatile Memory Type, meaning that it requires power to retain data. It has a Clock Frequency of 400MHz, allowing for fast data processing. The Supply Current-Max is 0.215mA, indicating its low power consumption. The Memory Width is 16, indicating the number of bits that can be accessed at one time. The Standby Current-Max is 0.01A, indicating its low power usage when not in use. Finally, it has a Refresh Cycles of 8192, indicating the number of times the memory must be refreshed to retain data.
MT47H32M16NF-25E IT:H Features
Package / Case: 84-TFBGA
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
MT47H32M16NF-25E IT:H Applications
There are a lot of Micron Technology Inc. MT47H32M16NF-25E IT:H Memory applications.
personal digital assistants
main computer memory
personal computers
embedded logic
servers
printers
networks
multimedia computers
nonvolatile BIOS memory
data buffer
MT47H32M16NF-25E IT:H More Descriptions
DRAM Chip DDR2 SDRAM 512M-Bit 32Mx16 1.8V 84-Pin FBGA
EAR99 Surface Mount MT47H32M16 Tray ic memory 400MHz 400ps 8mm 0.01A
DRAM, DDR2 SDRAM, 512Mb, x16, 84-ball FBGA, RoHSMicron SCT
DDR2 SDRAM 32MX16 PLASTIC GREEN FBGA 1.8V
DDR2 DRAM, 256MX4, 0.4ns, CMOS, PBGA84
IC DRAM 512MBIT PARALLEL 84FBGA
DRAM, 32M X 16BIT, -40 TO 95DEG C ROHS COMPLIANT: YES
EAR99 Surface Mount MT47H32M16 Tray ic memory 400MHz 400ps 8mm 0.01A
DRAM, DDR2 SDRAM, 512Mb, x16, 84-ball FBGA, RoHSMicron SCT
DDR2 SDRAM 32MX16 PLASTIC GREEN FBGA 1.8V
DDR2 DRAM, 256MX4, 0.4ns, CMOS, PBGA84
IC DRAM 512MBIT PARALLEL 84FBGA
DRAM, 32M X 16BIT, -40 TO 95DEG C ROHS COMPLIANT: YES
The three parts on the right have similar specifications to MT47H32M16NF-25E IT:H.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeClock FrequencySupply Current-MaxAccess TimeMemory FormatMemory InterfaceOrganizationOutput CharacteristicsMemory WidthWrite Cycle Time - Word, PageStandby Current-MaxMemory DensityI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthHeight Seated (Max)LengthWidthRoHS StatusSeriesView Compare
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MT47H32M16NF-25E IT:H9 WeeksSurface Mount84-TFBGAYES-40°C~95°C TCTray2014e1yesActive3 (168 Hours)84EAR99Tin/Silver/Copper (Sn/Ag/Cu)AUTO/SELF REFRESH8542.32.00.28SDRAM - DDR21.7V~1.9VBOTTOM26011.8V0.8mm30MT47H32M1684R-PBGA-B84Not Qualified1.9V1.8V1.7V512Mb 32M x 161VolatileSYNCHRONOUS400MHz0.215mA400psDRAMParallel32MX163-STATE1615ns0.01A536870912 bitCOMMON819248481.2mm12.5mm8mmROHS3 Compliant-- -
111 WeeksSurface Mount84-TFBGA--40°C~85°C TATape & Reel (TR)---Active3 (168 Hours)-----SDRAM - DDR21.7V~1.9V-------------1Gb 64M x 16-Volatile-400MHz-400psDRAMParallel---15ns---------ROHS3 CompliantAutomotive, AEC-Q100
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111 WeeksSurface Mount60-TFBGA-0°C~85°C TCTape & Reel (TR)---Active3 (168 Hours)-----SDRAM - DDR21.7V~1.9V-------------512M 64M x 8-Volatile-400MHz-400psDRAMParallel---15ns---------ROHS3 Compliant-
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16 WeeksSurface Mount60-TFBGA-0°C~85°C TCTape & Reel (TR)---Active3 (168 Hours)-----SDRAM - DDR21.7V~1.9V-------------1Gb 256M x 4-Volatile-400MHz-400psDRAMParallel---15ns---------ROHS3 Compliant-
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Surface Mount 84 Pin Memory IC MT47H64M16 1 Gb kb 12.5mm mm 160mA mA
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Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series
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