MSD1328-RT1G

ON Semiconductor MSD1328-RT1G

Part Number:
MSD1328-RT1G
Manufacturer:
ON Semiconductor
Ventron No:
3585628-MSD1328-RT1G
Description:
TRANS NPN 20V 0.5A SC-59
ECAD Model:
Datasheet:
MSD1328-RT1G

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Specifications
ON Semiconductor MSD1328-RT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MSD1328-RT1G.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • JESD-609 Code
    e3
  • Pbfree Code
    no
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    MATTE TIN
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • JESD-30 Code
    R-PDSO-G3
  • Qualification Status
    COMMERCIAL
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power - Max
    200mW
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 500mA 2V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    400mV @ 20mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max)
    20V
  • Current - Collector (Ic) (Max)
    500mA
  • RoHS Status
    ROHS3 Compliant
Description
MSD1328-RT1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 500mA 2V.When VCE saturation is 400mV @ 20mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).The device has a 20V maximal voltage - Collector Emitter Breakdown.

MSD1328-RT1G Features
the DC current gain for this device is 200 @ 500mA 2V
the vce saturation(Max) is 400mV @ 20mA, 500mA


MSD1328-RT1G Applications
There are a lot of Rochester Electronics, LLC
MSD1328-RT1G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MSD1328-RT1G More Descriptions
Tape & Reel (TR) Surface Mount NPN Single Bipolar (BJT) Transistor 200 @ 500mA 2V 100nA ICBO 200mW 25V
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 20V 0.5A 3-Pin SC-59 T/R - Tape and Reel
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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