ON Semiconductor MSD1328-RT1G
- Part Number:
- MSD1328-RT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3585628-MSD1328-RT1G
- Description:
- TRANS NPN 20V 0.5A SC-59
- Datasheet:
- MSD1328-RT1G
ON Semiconductor MSD1328-RT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MSD1328-RT1G.
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishMATTE TIN
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- JESD-30 CodeR-PDSO-G3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Power - Max200mW
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 500mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic400mV @ 20mA, 500mA
- Voltage - Collector Emitter Breakdown (Max)20V
- Current - Collector (Ic) (Max)500mA
- RoHS StatusROHS3 Compliant
MSD1328-RT1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 500mA 2V.When VCE saturation is 400mV @ 20mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).The device has a 20V maximal voltage - Collector Emitter Breakdown.
MSD1328-RT1G Features
the DC current gain for this device is 200 @ 500mA 2V
the vce saturation(Max) is 400mV @ 20mA, 500mA
MSD1328-RT1G Applications
There are a lot of Rochester Electronics, LLC
MSD1328-RT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 500mA 2V.When VCE saturation is 400mV @ 20mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).The device has a 20V maximal voltage - Collector Emitter Breakdown.
MSD1328-RT1G Features
the DC current gain for this device is 200 @ 500mA 2V
the vce saturation(Max) is 400mV @ 20mA, 500mA
MSD1328-RT1G Applications
There are a lot of Rochester Electronics, LLC
MSD1328-RT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MSD1328-RT1G More Descriptions
Tape & Reel (TR) Surface Mount NPN Single Bipolar (BJT) Transistor 200 @ 500mA 2V 100nA ICBO 200mW 25V
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 20V 0.5A 3-Pin SC-59 T/R - Tape and Reel
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 20V 0.5A 3-Pin SC-59 T/R - Tape and Reel
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