ON Semiconductor MSB710-RT1
- Part Number:
- MSB710-RT1
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3585644-MSB710-RT1
- Description:
- TRANS PNP 50V 0.5A SC-59
- ECAD Model:
-
- Datasheet:
- MSB710-RT1
ON Semiconductor MSB710-RT1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MSB710-RT1.
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTIN LEAD
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)240
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count3
- JESD-30 CodeR-PDSO-G3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Power - Max200mW
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 150mA 10V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic600mV @ 30mA, 300mA
- Voltage - Collector Emitter Breakdown (Max)50V
- Current - Collector (Ic) (Max)500mA
- Transition Frequency200MHz
- RoHS StatusNon-RoHS Compliant
MSB710-RT1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 150mA 10V.When VCE saturation is 600mV @ 30mA, 300mA, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 200MHz.The device has a 50V maximal voltage - Collector Emitter Breakdown.
MSB710-RT1 Features
the DC current gain for this device is 120 @ 150mA 10V
the vce saturation(Max) is 600mV @ 30mA, 300mA
a transition frequency of 200MHz
MSB710-RT1 Applications
There are a lot of Rochester Electronics, LLC
MSB710-RT1 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 150mA 10V.When VCE saturation is 600mV @ 30mA, 300mA, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 200MHz.The device has a 50V maximal voltage - Collector Emitter Breakdown.
MSB710-RT1 Features
the DC current gain for this device is 120 @ 150mA 10V
the vce saturation(Max) is 600mV @ 30mA, 300mA
a transition frequency of 200MHz
MSB710-RT1 Applications
There are a lot of Rochester Electronics, LLC
MSB710-RT1 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MSB710-RT1 More Descriptions
Tape & Reel (TR) Surface Mount PNP SINGLE Bipolar (BJT) Transistor 120 @ 150mA 10V 500mA 200mW 200MHz
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
TRANS PNP GP BIPO 50V SC-59
OEMs, CMs ONLY (NO BROKERS)
- Tape and Reel
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
TRANS PNP GP BIPO 50V SC-59
OEMs, CMs ONLY (NO BROKERS)
- Tape and Reel
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