ON Semiconductor MSA1162YT1G
- Part Number:
- MSA1162YT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3585638-MSA1162YT1G
- Description:
- TRANS PNP 50V 0.1A SC-59
- ECAD Model:
-
- Datasheet:
- MSA1162YT1G
ON Semiconductor MSA1162YT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MSA1162YT1G.
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Supplier Device PackageSC-59
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Power - Max200mW
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 2mA 6V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic500mV @ 10mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)50V
- Current - Collector (Ic) (Max)100mA
- Frequency - Transition80MHz
- RoHS StatusROHS3 Compliant
MSA1162YT1G Overview
This device has a DC current gain of 120 @ 2mA 6V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).Product package SC-59 comes from the supplier.Collector Emitter Breakdown occurs at 50VV - Maximum voltage.
MSA1162YT1G Features
the DC current gain for this device is 120 @ 2mA 6V
the vce saturation(Max) is 500mV @ 10mA, 100mA
the supplier device package of SC-59
MSA1162YT1G Applications
There are a lot of Rochester Electronics, LLC
MSA1162YT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 120 @ 2mA 6V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).Product package SC-59 comes from the supplier.Collector Emitter Breakdown occurs at 50VV - Maximum voltage.
MSA1162YT1G Features
the DC current gain for this device is 120 @ 2mA 6V
the vce saturation(Max) is 500mV @ 10mA, 100mA
the supplier device package of SC-59
MSA1162YT1G Applications
There are a lot of Rochester Electronics, LLC
MSA1162YT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MSA1162YT1G More Descriptions
Tape & Reel (TR) Surface Mount PNP Single Bipolar (BJT) Transistor 120 @ 2mA 6V 100nA 200mW 80MHz
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
PNP Bipolar Transistor hFE 120 to 240
Trans GP BJT PNP 50V 0.1A 3-Pin SC-59 T/R - Tape and Reel
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
PNP Bipolar Transistor hFE 120 to 240
Trans GP BJT PNP 50V 0.1A 3-Pin SC-59 T/R - Tape and Reel
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