NXP USA Inc. MRFE6VP6600GNR3
- Part Number:
- MRFE6VP6600GNR3
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2477316-MRFE6VP6600GNR3
- Description:
- TRANS RF LDMOS 600W 50V
- ECAD Model:
-
- Datasheet:
- RF Products Selector Guide
NXP USA Inc. MRFE6VP6600GNR3 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MRFE6VP6600GNR3.
- Factory Lead Time10 Weeks
- Package / CaseOM-780G-4L
- PackagingTape & Reel (TR)
- Published2009
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- ECCN CodeEAR99
- Voltage - Rated133V
- HTS Code8541.29.00.75
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Frequency230MHz
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Current - Test100mA
- Transistor TypeLDMOS (Dual)
- Gain24.7dB
- Power - Output600W
- Voltage - Test50V
- RoHS StatusROHS3 Compliant
MRFE6VP6600GNR3 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet MRFE6VP6600GNR3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MRFE6VP6600GNR3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet MRFE6VP6600GNR3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MRFE6VP6600GNR3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MRFE6VP6600GNR3 More Descriptions
RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 600 W CW, 50 V
RF Power Transistor,1.8 to 600 MHz, 600 W, Typ Gain in dB is 24 @ 98 MHz, 50 V, LDMOS, SOT1825
Transistor RF FET N-CH 133V 1.8MHz to 600MHz 4-Pin OM-780G T/R
RF Power Transistor,1.8 to 600 MHz, 600 W, Typ Gain in dB is 24 @ 98 MHz, 50 V, LDMOS, SOT1825
Transistor RF FET N-CH 133V 1.8MHz to 600MHz 4-Pin OM-780G T/R
The three parts on the right have similar specifications to MRFE6VP6600GNR3.
-
ImagePart NumberManufacturerFactory Lead TimePackage / CasePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeVoltage - RatedHTS CodePeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Current - TestTransistor TypeGainPower - OutputVoltage - TestRoHS StatusSupplier Device PackageBase Part NumberSurface MountTransistor Element MaterialNumber of TerminationsSubcategoryTerminal FormJESD-30 CodeQualification StatusOperating Temperature (Max)Number of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationPolarity/Channel TypeDS Breakdown Voltage-MinFET TechnologyPower Dissipation-Max (Abs)View Compare
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MRFE6VP6600GNR310 WeeksOM-780G-4LTape & Reel (TR)2009Active3 (168 Hours)EAR99133V8541.29.00.75NOT SPECIFIED230MHzNOT SPECIFIED100mALDMOS (Dual)24.7dB600W50VROHS3 Compliant-------------------- -
-SOT-957ATape & Reel (TR)2009Obsolete1 (Unlimited)-66V--880MHz-1.2ALDMOS21dB35W28VROHS3 CompliantNI-780H-2LMRFE6S9160-----------------
-
10 WeeksNI-1230-4STape & Reel (TR)2006ActiveNot ApplicableEAR99130V8541.29.00.75260230MHz40100mALDMOS (Dual)25dB600W50VROHS3 Compliant-MRFE6VP5600YESSILICON4FET General Purpose PowerFLATR-CDFP-F4Not Qualified225°C2COMMON SOURCE, 2 ELEMENTSENHANCEMENT MODESOURCEAMPLIFIERN-CHANNEL130VMETAL-OXIDE SEMICONDUCTOR1670W
-
-NI-780S-4Tape & Reel (TR)2011Discontinued3 (168 Hours)EAR99130V8541.29.00.75-230MHz-100mALDMOS (Dual)26.5dB300W50VROHS3 Compliant-MRFE6VP6300-----------------
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