NXP USA Inc. MRFE6VP61K25HR6
- Part Number:
- MRFE6VP61K25HR6
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2475164-MRFE6VP61K25HR6
- Description:
- FET RF 2CH 133V 230MHZ NI-1230
- ECAD Model:
-
- Datasheet:
- MRFE6VP61K25HR6
NXP USA Inc. MRFE6VP61K25HR6 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MRFE6VP61K25HR6.
- Factory Lead Time10 Weeks
- Package / CaseNI-1230
- Surface MountYES
- Transistor Element MaterialSILICON
- PackagingTape & Reel (TR)
- Published2006
- Part StatusActive
- Moisture Sensitivity Level (MSL)Not Applicable
- Number of Terminations4
- ECCN CodeEAR99
- Voltage - Rated133V
- HTS Code8541.29.00.75
- SubcategoryFET General Purpose Power
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Frequency230MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMRFE6VP61K25
- JESD-30 CodeR-CDFM-F4
- Qualification StatusNot Qualified
- Operating Temperature (Max)225°C
- Number of Elements2
- ConfigurationCOMMON SOURCE, 2 ELEMENTS
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Current - Test100mA
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypeN-CHANNEL
- Transistor TypeLDMOS (Dual)
- Gain24dB
- DS Breakdown Voltage-Min125V
- Power - Output1250W
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max (Abs)1300W
- Voltage - Test50V
- RoHS StatusROHS3 Compliant
MRFE6VP61K25HR6 Description
High VSWR industrial applications, such as laser and plasma exciters, broadcast (analog and digital), aircraft, and radio/land mobile applications, are where these incredibly robust devices are meant to be used. They can use frequency ranges between 1.8 and 600 MHz thanks to their mismatched input and output designs.
MRFE6VP61K25HR6 Features
Wide Frequency Range Due to Mismatched Input and Output Utilization: The device can be configured for single-ended or push-pull operation.
Designed from 30 V to 50 V for Extended Power Range Qualified Up to a Maximum of 50 VDD Operation
With the proper biasing, it is suitable for linear application
Improved Class C Operation via Integrated ESD Protection with a Wider Negative Gate-Source Voltage Range
MRFE6VP61K25HR6 Applications
Switching applications
High VSWR industrial applications, such as laser and plasma exciters, broadcast (analog and digital), aircraft, and radio/land mobile applications, are where these incredibly robust devices are meant to be used. They can use frequency ranges between 1.8 and 600 MHz thanks to their mismatched input and output designs.
MRFE6VP61K25HR6 Features
Wide Frequency Range Due to Mismatched Input and Output Utilization: The device can be configured for single-ended or push-pull operation.
Designed from 30 V to 50 V for Extended Power Range Qualified Up to a Maximum of 50 VDD Operation
With the proper biasing, it is suitable for linear application
Improved Class C Operation via Integrated ESD Protection with a Wider Negative Gate-Source Voltage Range
MRFE6VP61K25HR6 Applications
Switching applications
MRFE6VP61K25HR6 More Descriptions
RF Power Transistor,1.8 to 600 MHz, 1250 W, Typ Gain in dB is 22.9 @ 230 MHz, 50 V, LDMOS, SOT1787
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
TRANSISTOR, RF, 133V, NI-1230H-4S; Drain Source Voltage Vds: 133VDC; Continuous Drain Current Id: -; Power Dissipation Pd: 1.333kW; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 600MHz; RF Transistor Case: NI-1230;
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
TRANSISTOR, RF, 133V, NI-1230H-4S; Drain Source Voltage Vds: 133VDC; Continuous Drain Current Id: -; Power Dissipation Pd: 1.333kW; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 600MHz; RF Transistor Case: NI-1230;
The three parts on the right have similar specifications to MRFE6VP61K25HR6.
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ImagePart NumberManufacturerFactory Lead TimePackage / CaseSurface MountTransistor Element MaterialPackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeVoltage - RatedHTS CodeSubcategoryTerminal FormPeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberJESD-30 CodeQualification StatusOperating Temperature (Max)Number of ElementsConfigurationOperating ModeCase ConnectionCurrent - TestTransistor ApplicationPolarity/Channel TypeTransistor TypeGainDS Breakdown Voltage-MinPower - OutputFET TechnologyPower Dissipation-Max (Abs)Voltage - TestRoHS StatusSupplier Device PackageView Compare
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MRFE6VP61K25HR610 WeeksNI-1230YESSILICONTape & Reel (TR)2006ActiveNot Applicable4EAR99133V8541.29.00.75FET General Purpose PowerFLAT260230MHz40MRFE6VP61K25R-CDFM-F4Not Qualified225°C2COMMON SOURCE, 2 ELEMENTSENHANCEMENT MODESOURCE100mAAMPLIFIERN-CHANNELLDMOS (Dual)24dB125V1250WMETAL-OXIDE SEMICONDUCTOR1300W50VROHS3 Compliant-- -
-SOT-957A--Tape & Reel (TR)2009Obsolete1 (Unlimited)--66V----880MHz-MRFE6S9160-------1.2A--LDMOS21dB-35W--28VROHS3 CompliantNI-780H-2L
-
10 WeeksNI-1230-4SYESSILICONTape & Reel (TR)2006ActiveNot Applicable4EAR99130V8541.29.00.75FET General Purpose PowerFLAT260230MHz40MRFE6VP5600R-CDFP-F4Not Qualified225°C2COMMON SOURCE, 2 ELEMENTSENHANCEMENT MODESOURCE100mAAMPLIFIERN-CHANNELLDMOS (Dual)25dB130V600WMETAL-OXIDE SEMICONDUCTOR1670W50VROHS3 Compliant-
-
-NI-880S--Tape & Reel (TR)2008Obsolete1 (Unlimited)--66V---NOT SPECIFIED880MHzNOT SPECIFIEDMRFE6S9200-------1.4A--LDMOS21dB-58W--28VROHS3 Compliant-
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