NXP USA Inc. MRFE6VP5600HR6
- Part Number:
- MRFE6VP5600HR6
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2477434-MRFE6VP5600HR6
- Description:
- FET RF 2CH 130V 230MHZ NI1230
- ECAD Model:
-
- Datasheet:
- MRFE6VP5600HR6
NXP USA Inc. MRFE6VP5600HR6 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MRFE6VP5600HR6.
- Factory Lead Time10 Weeks
- Package / CaseNI-1230-4H
- Surface MountYES
- Transistor Element MaterialSILICON
- PackagingTape & Reel (TR)
- Published2006
- Part StatusActive
- Moisture Sensitivity Level (MSL)Not Applicable
- Number of Terminations4
- ECCN CodeEAR99
- Voltage - Rated130V
- HTS Code8541.29.00.75
- SubcategoryFET General Purpose Power
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Frequency230MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMRFE6VP5600
- JESD-30 CodeR-CDFM-F4
- Qualification StatusNot Qualified
- Operating Temperature (Max)225°C
- Number of Elements2
- ConfigurationCOMMON SOURCE, 2 ELEMENTS
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Current - Test100mA
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypeN-CHANNEL
- Transistor TypeLDMOS (Dual)
- Gain25dB
- DS Breakdown Voltage-Min130V
- Power - Output600W
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max (Abs)1670W
- Voltage - Test50V
- RoHS StatusROHS3 Compliant
MRFE6VP5600HR6 Description
These highly durable devices are intended for use in high VSWR industrial applications, including as laser and plasma exciters, broadcast (analog and digital), aircraft, and radio/land mobile applications. They have mismatched input and output configurations that enable frequency ranges between 1.8 and 600 MHz to be utilized.
MRFE6VP5600HR6 Features
? Utilization of a Wide Frequency Range Due to Unmatched Input and Output
? The device can be utilized in a push-pull or single-ended configuration.
? Up to a Maximum of 50 VDD Operation Qualified
? 30 V to 50 V Characterized for Extended Power Range
? Appropriate Biasing and Suitable for Linear Application
? Improved Class C Operation with Integrated ESD Protection and a Wider Negative Gate-Source Voltage Range
? Displays series equivalent large-signal impedance parameters
MRFE6VP5600HR6 Applications
Switching applications
These highly durable devices are intended for use in high VSWR industrial applications, including as laser and plasma exciters, broadcast (analog and digital), aircraft, and radio/land mobile applications. They have mismatched input and output configurations that enable frequency ranges between 1.8 and 600 MHz to be utilized.
MRFE6VP5600HR6 Features
? Utilization of a Wide Frequency Range Due to Unmatched Input and Output
? The device can be utilized in a push-pull or single-ended configuration.
? Up to a Maximum of 50 VDD Operation Qualified
? 30 V to 50 V Characterized for Extended Power Range
? Appropriate Biasing and Suitable for Linear Application
? Improved Class C Operation with Integrated ESD Protection and a Wider Negative Gate-Source Voltage Range
? Displays series equivalent large-signal impedance parameters
MRFE6VP5600HR6 Applications
Switching applications
MRFE6VP5600HR6 More Descriptions
RF Power Transistor,1.8 to 600 MHz, 600 W, Typ Gain in dB is 24.6 @ 230 MHz, 50 V, LDMOS, SOT1787
Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V, CFM4F, RoHSNXP Semiconductors SCT
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
RF FET, 130V, 1.667KW, 600MHZ, NI-1230; Drain Source Voltage Vds: 130V; Continuous Drain Current Id: -; Power Dissipation Pd: 1.667kW; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 600MHz; RF Transistor Case: NI-12
Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V, CFM4F, RoHSNXP Semiconductors SCT
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
RF FET, 130V, 1.667KW, 600MHZ, NI-1230; Drain Source Voltage Vds: 130V; Continuous Drain Current Id: -; Power Dissipation Pd: 1.667kW; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 600MHz; RF Transistor Case: NI-12
The three parts on the right have similar specifications to MRFE6VP5600HR6.
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ImagePart NumberManufacturerFactory Lead TimePackage / CaseSurface MountTransistor Element MaterialPackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeVoltage - RatedHTS CodeSubcategoryTerminal FormPeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberJESD-30 CodeQualification StatusOperating Temperature (Max)Number of ElementsConfigurationOperating ModeCase ConnectionCurrent - TestTransistor ApplicationPolarity/Channel TypeTransistor TypeGainDS Breakdown Voltage-MinPower - OutputFET TechnologyPower Dissipation-Max (Abs)Voltage - TestRoHS StatusView Compare
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MRFE6VP5600HR610 WeeksNI-1230-4HYESSILICONTape & Reel (TR)2006ActiveNot Applicable4EAR99130V8541.29.00.75FET General Purpose PowerFLAT260230MHz40MRFE6VP5600R-CDFM-F4Not Qualified225°C2COMMON SOURCE, 2 ELEMENTSENHANCEMENT MODESOURCE100mAAMPLIFIERN-CHANNELLDMOS (Dual)25dB130V600WMETAL-OXIDE SEMICONDUCTOR1670W50VROHS3 Compliant- -
-NI-1230-4S--Tape & Reel (TR)2011Discontinued3 (168 Hours)-EAR99130V----230MHz-MRFE6VP5600-------100mA--LDMOS (Dual)25dB-600W--50VROHS3 Compliant
-
-NI-880S--Tape & Reel (TR)2008Obsolete1 (Unlimited)--66V---NOT SPECIFIED880MHzNOT SPECIFIEDMRFE6S9200-------1.4A--LDMOS21dB-58W--28VROHS3 Compliant
-
-NI-780S-4--Tape & Reel (TR)2011Discontinued3 (168 Hours)-EAR99130V8541.29.00.75---230MHz-MRFE6VP6300-------100mA--LDMOS (Dual)26.5dB-300W--50VROHS3 Compliant
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