NXP USA Inc. MRF8VP13350NR3
- Part Number:
- MRF8VP13350NR3
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2477454-MRF8VP13350NR3
- Description:
- TRANS RF LDMOS 350W 50V
- ECAD Model:
-
- Datasheet:
- RF Products Selector Guide
NXP USA Inc. MRF8VP13350NR3 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MRF8VP13350NR3.
- Factory Lead Time10 Weeks
- Package / CaseOM780-4
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Voltage - Rated100V
- HTS Code8541.29.00.75
- Peak Reflow Temperature (Cel)260
- Frequency1.3GHz
- Time@Peak Reflow Temperature-Max (s)40
- Current - Test100mA
- Transistor TypeLDMOS (Dual)
- Gain19.2dB
- Power - Output350W
- Voltage - Test50V
- RoHS StatusROHS3 Compliant
MRF8VP13350NR3 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet MRF8VP13350NR3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MRF8VP13350NR3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet MRF8VP13350NR3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MRF8VP13350NR3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MRF8VP13350NR3 More Descriptions
RF MOSFET Transistors RF POWER LDMOS TRANSISTOR 700-1300 MHz, 350 W CW, 50 V
MRF8VP13350N Series 100 V 1.3 GHz RF Power LDMOS Transistor - OM780-4
Transistor RF FET N-CH 100V 700MHz to 1300MHz 4-Pin OM-780 T/R
RF Mosfet LDMOS (Dual) 50V 100mA 1.3GHz 19.2dB 350W OM780-4
RF Power Transistor, 0.70 to 1.3 GHz, 350 W CW, Typ Gain in dB is 20.7 @ 915 MHz, 50 V, SOT1818-4, LDMOS
19.2 dB Compliant 1.3 GHz Tape & Reel (TR) 350 W 100 mA 50 V 100 V
MRF8VP13350N Series 100 V 1.3 GHz RF Power LDMOS Transistor - OM780-4
Transistor RF FET N-CH 100V 700MHz to 1300MHz 4-Pin OM-780 T/R
RF Mosfet LDMOS (Dual) 50V 100mA 1.3GHz 19.2dB 350W OM780-4
RF Power Transistor, 0.70 to 1.3 GHz, 350 W CW, Typ Gain in dB is 20.7 @ 915 MHz, 50 V, SOT1818-4, LDMOS
19.2 dB Compliant 1.3 GHz Tape & Reel (TR) 350 W 100 mA 50 V 100 V
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