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MRF8S18120HR3

NXP USA Inc. MRF8S18120HR3

Part Number:
MRF8S18120HR3
Manufacturer:
NXP USA Inc.
Ventron No:
2477429-MRF8S18120HR3
Description:
FET RF 65V 1.81GHZ NI-780
ECAD Model:
Datasheet:
MRF8S18120HR3

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Specifications
NXP USA Inc. MRF8S18120HR3 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MRF8S18120HR3.
  • Package / Case
    SOT-957A
  • Packaging
    Tape & Reel (TR)
  • Published
    2010
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • ECCN Code
    5A991
  • Voltage - Rated
    65V
  • HTS Code
    8541.29.00.75
  • Frequency
    1.81GHz
  • Base Part Number
    MRF8S18120
  • Current - Test
    800mA
  • Transistor Type
    LDMOS
  • Gain
    18.2dB
  • Power - Output
    72W
  • Voltage - Test
    28V
  • RoHS Status
    ROHS3 Compliant
Description
MRF8S18120HR3 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet MRF8S18120HR3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MRF8S18120HR3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MRF8S18120HR3 More Descriptions
GSM, GSM EDGE Lateral N-Channel RF Power MOSFET, 1805-1880 MHz, 72 W CW, 28 V
Transistor RF FET N-CH 65V 1805MHz to 1880MHz 3-Pin NI-780 T/R
Trans RF MOSFET N-CH 65V 3-Pin NI-780 T/R
Switching Controllers 2/3/4 PH CONTROLLER/ DRIVE
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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