NXP USA Inc. MRF7P20040HSR3
- Part Number:
- MRF7P20040HSR3
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2476339-MRF7P20040HSR3
- Description:
- FET RF 2CH 65V 2.03GHZ NI780HS-4
- ECAD Model:
-
- Datasheet:
- MRF7P20040HR3/HSR3
NXP USA Inc. MRF7P20040HSR3 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MRF7P20040HSR3.
- Package / CaseNI-780S-4
- Surface MountYES
- Transistor Element MaterialSILICON
- PackagingTape & Reel (TR)
- Published2010
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations4
- ECCN CodeEAR99
- Voltage - Rated65V
- HTS Code8541.29.00.75
- SubcategoryFET General Purpose Power
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Frequency2.03GHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMRF7P20040
- JESD-30 CodeR-CDFP-F4
- Qualification StatusNot Qualified
- Operating Temperature (Max)225°C
- Number of Elements2
- ConfigurationCOMMON SOURCE, 2 ELEMENTS
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Current - Test150mA
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypeN-CHANNEL
- Transistor TypeLDMOS (Dual)
- Gain18.2dB
- DS Breakdown Voltage-Min65V
- Power - Output10W
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Voltage - Test32V
- RoHS StatusROHS3 Compliant
MRF7P20040HSR3 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet MRF7P20040HSR3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MRF7P20040HSR3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet MRF7P20040HSR3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MRF7P20040HSR3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MRF7P20040HSR3 More Descriptions
Single W-CDMA Lateral N-Channel RF Power MOSFET, 2010-2025 MHz, 10 W Avg., 32 V
RF Mosfet LDMOS (Dual) 32 V 150 mA 1.8GHz ~ 2.2GHz 18.2dB 10W NI-780S-4
RF Power Field-Effect Transistor, 2-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Power LDMOS Transistor N-Channel 65V 5-Pin NI-780S T/R
Trans RF MOSFET N-CH 65V 5-Pin NI-780S T/R
RF MOSFET Transistors HV7 2GHZ 40W NI780HS-4
FET RF 2CH 65V 2.03GHZ NI780HS-4
RF 2-ELEMENT, S BAND, N-CHANNEL
RF Mosfet LDMOS (Dual) 32 V 150 mA 1.8GHz ~ 2.2GHz 18.2dB 10W NI-780S-4
RF Power Field-Effect Transistor, 2-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Power LDMOS Transistor N-Channel 65V 5-Pin NI-780S T/R
Trans RF MOSFET N-CH 65V 5-Pin NI-780S T/R
RF MOSFET Transistors HV7 2GHZ 40W NI780HS-4
FET RF 2CH 65V 2.03GHZ NI780HS-4
RF 2-ELEMENT, S BAND, N-CHANNEL
The three parts on the right have similar specifications to MRF7P20040HSR3.
-
ImagePart NumberManufacturerPackage / CaseSurface MountTransistor Element MaterialPackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeVoltage - RatedHTS CodeSubcategoryTerminal FormPeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberJESD-30 CodeQualification StatusOperating Temperature (Max)Number of ElementsConfigurationOperating ModeCase ConnectionCurrent - TestTransistor ApplicationPolarity/Channel TypeTransistor TypeGainDS Breakdown Voltage-MinPower - OutputFET TechnologyVoltage - TestRoHS StatusFactory Lead TimeTerminal PositionView Compare
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MRF7P20040HSR3NI-780S-4YESSILICONTape & Reel (TR)2010Obsolete3 (168 Hours)4EAR9965V8541.29.00.75FET General Purpose PowerFLAT2602.03GHz40MRF7P20040R-CDFP-F4Not Qualified225°C2COMMON SOURCE, 2 ELEMENTSENHANCEMENT MODESOURCE150mAAMPLIFIERN-CHANNELLDMOS (Dual)18.2dB65V10WMETAL-OXIDE SEMICONDUCTOR32VROHS3 Compliant--- -
NI-880S--Tape & Reel (TR)2011Obsolete1 (Unlimited)-EAR9965V8541.29.00.75---1.81GHz-MRF7S18170-------1.4A--LDMOS17.5dB-50W-28VROHS3 Compliant--
-
NI-880SYESSILICONTape & Reel (TR)2011Obsolete1 (Unlimited)2EAR9965V8541.29.00.75FET General Purpose PowerFLAT2601.99GHz40MRF7S19170R-CDFM-F2Not Qualified225°C1SINGLEENHANCEMENT MODESOURCE1.4A-N-CHANNELLDMOS17.2dB-50WMETAL-OXIDE SEMICONDUCTOR28VROHS3 Compliant10 WeeksDUAL
-
NI-780S--Tape & Reel (TR)2011Obsolete1 (Unlimited)-EAR9965V8541.29.00.75---1.99GHz-MRF7S19080-------750mA--LDMOS18dB-24W-28VROHS3 Compliant--
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