NXP USA Inc. MRF1511NT1

Name: MRF1511NT1
Brand: NXP USA Inc.
SKU: 2475036-MRF1511NT1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MRF1511NT1

Manufacturer:: NXP USA Inc.

Ventron No:: 2475036-MRF1511NT1

Description:: FET RF 40V 175MHZ PLD-1.5

ECAD Model:

Datasheet:: MRF1511NT1

Specifications

NXP USA Inc. MRF1511NT1 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MRF1511NT1.

Factory Lead Time
10 Weeks
Package / Case
PLD-1.5
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Voltage - Rated
40V
HTS Code
8541.29.00.75
Subcategory
FET General Purpose Power
Current Rating (Amps)
4A
Terminal Position
QUAD
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
260
Frequency
175MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
MRF1511
JESD-30 Code
R-PQSO-N4
Qualification Status
Not Qualified
Operating Temperature (Max)
150°C
Number of Elements
1
Configuration
SINGLE
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Current - Test
150mA
Transistor Application
AMPLIFIER
Polarity/Channel Type
N-CHANNEL
Transistor Type
LDMOS
Gain
13dB
Drain Current-Max (Abs) (ID)
4A
DS Breakdown Voltage-Min
40V
Power - Output
8W
FET Technology
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)
62.5W
Voltage - Test
7.5V
RoHS Status
ROHS3 Compliant

Description

MRF1511NT1 Description MRF1511NT1 is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes MRF1511NT1 suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. MRF1511NT1 has the common source configuration. MRF1511NT1 Features Gold metalization Excellent thermal stability Common source configuration Thermally enhanced packaging for lower junction temperatures MRF1511NT1 Applications ISM applications DC large signal applications

MRF1511NT1 More Descriptions

Lateral N-Channel Broadband RF Power MOSFET, 175 MHz, 8 W, 7.5 V
MOSFET, N, RF, PLD-1.5; Drain Source Voltage Vds:40V; Continuous Drain Current Id:4A; Power Dissipation Pd:62.5W; RF Transistor Case:PLD-1.5; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Gain:13dB; Output Power:8W; Package / Case:PLD-1.5; Power Dissipation Max:62.5W; Termination Type:SMD; Transistor Case Style:PLD-1.5; Transistor Polarity:N Channel; Voltage Vds:400mV
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:4A; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:1.6V; Package/Case:Case 466 ;RoHS Compliant: Yes

Certification