Fairchild/ON Semiconductor MPSA65

Name: MPSA65
Brand: Fairchild/ON Semiconductor
SKU: 2467710-MPSA65
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MPSA65

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2467710-MPSA65

Description:: TRANS PNP DARL 30V 1.2A TO-92

ECAD Model:

Datasheet:: MPSA65, MMBTA65, PZTA65 TO-92 Case Package Details MPSA62-66

Specifications

Fairchild/ON Semiconductor MPSA65 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor MPSA65.

Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Box
JESD-609 Code
e3
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT APPLICABLE
Time@Peak Reflow Temperature-Max (s)
NOT APPLICABLE
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Power - Max
625mW
Polarity/Channel Type
PNP
Transistor Type
PNP - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
20000 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1.5V @ 100μA, 100mA
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
500mA
Transition Frequency
100MHz
Frequency - Transition
100MHz
RoHS Status
ROHS3 Compliant

Description

MPSA65 Overview
This device has a DC current gain of 20000 @ 100mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1.5V @ 100μA, 100mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 100MHz.Collector Emitter Breakdown occurs at 30VV - Maximum voltage.

MPSA65 Features
the DC current gain for this device is 20000 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
a transition frequency of 100MHz

MPSA65 Applications
There are a lot of Rochester Electronics, LLC
MPSA65 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

MPSA65 More Descriptions

Small Signal Bipolar Transistor, 1.2A I(C), 1-Element, PNP, Silicon, TO-92
Bulk Through Hole PNP - Darlington Single Bipolar (BJT) Transistor 20000 @ 100mA 5V 1.2A 625mW 100MHz
Trans Darlington PNP 30V 1.2A 3-Pin TO-92 Bulk
Darlington Transistors PNP Transistor Darlington - Bulk
This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics.
BIPOLAR TRANSISTOR, DARLINGTON; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:30V; Power Dissipation Pd:625mW; DC Collector Current:1.2A; DC Current Gain hFE:50000; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:1.5V; Current Ic Continuous a Max:1.2A; Gain Bandwidth ft Typ:100MHz; Hfe Min:20000; Package / Case:TO-92; Power Dissipation Pd:625mW; Termination Type:Through Hole

Product Comparison

The three parts on the right have similar specifications to MPSA65.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Power - Max

Polarity/Channel Type

Transistor Type

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Transition Frequency

Frequency - Transition

RoHS Status

Voltage - Collector Emitter Breakdown (Max):

Vce Saturation (Max) @ Ib, Ic:

Transistor Type:

Supplier Device Package:

Series:

Power - Max:

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Frequency - Transition:

DC Current Gain (hFE) (Min) @ Ic, Vce:

Current - Collector Cutoff (Max):

Current - Collector (Ic) (Max):

Supplier Device Package

Base Part Number

View Compare
MPSA65

Fairchild/ON Semiconductor

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

NO

SILICON

-65°C~150°C TJ

Box

e3

no

Obsolete

1 (Unlimited)

3

MATTE TIN

BOTTOM

NOT APPLICABLE

NOT APPLICABLE

3

O-PBCY-T3

COMMERCIAL

1

625mW

PNP

PNP - Darlington

20000 @ 100mA 5V

100nA ICBO

1.5V @ 100μA, 100mA

30V

500mA

100MHz

100MHz

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
MPSA14

Fairchild/ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

30V

1.5V @ 100µA, 100mA

NPN - Darlington

TO-92-3

-

625mW

Bulk

TO-226-3, TO-92-3 (TO-226AA)

-55°C ~ 150°C (TJ)

Through Hole

125MHz

20000 @ 100mA, 5V

100nA (ICBO)

1.2A

-

-

MPSA65 vs MPSA14
MPSA12

Fairchild/ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

20V

1V @ 10µA, 10mA

NPN - Darlington

TO-92-3

-

625mW

Bulk

TO-226-3, TO-92-3 (TO-226AA)

-55°C ~ 150°C (TJ)

Through Hole

-

20000 @ 10mA, 5V

100nA

1.2A

-

-

MPSA65 vs MPSA12
MPSA18_D27Z

Fairchild/ON Semiconductor

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

625mW

-

NPN

500 @ 10mA 5V

50nA ICBO

300mV @ 5mA, 50mA

45V

100mA

-

100MHz

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

TO-92-3

MPSA18

MPSA65 vs MPSA18_D27Z