ON Semiconductor MPSA64RLRM
- Part Number:
- MPSA64RLRM
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2472304-MPSA64RLRM
- Description:
- TRANS PNP DARL 30V 0.5A TO-92
- Datasheet:
- MPSA62, 63, 64
ON Semiconductor MPSA64RLRM technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MPSA64RLRM.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Box (TB)
- Published2009
- JESD-609 Codee0
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- SubcategoryOther Transistors
- Voltage - Rated DC-30V
- Max Power Dissipation625mW
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codenot_compliant
- Current Rating-500mA
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberMPSA64
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- PolarityPNP
- Element ConfigurationSingle
- Power Dissipation625mW
- Transistor ApplicationAMPLIFIER
- Transistor TypePNP - Darlington
- Collector Emitter Voltage (VCEO)30V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce20000 @ 100mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic1.5V @ 100μA, 100mA
- Collector Emitter Breakdown Voltage30V
- Transition Frequency125MHz
- Collector Emitter Saturation Voltage1.5V
- Frequency - Transition125MHz
- Collector Base Voltage (VCBO)30V
- Emitter Base Voltage (VEBO)10V
- Continuous Collector Current-500mA
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
MPSA64RLRM Overview
This device has a DC current gain of 20000 @ 100mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.5V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of -500mA is necessary for high efficiency.The base voltage of the emitter can be kept at 10V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -500mA.In this part, there is a transition frequency of 125MHz.The maximum collector current is 500mA volts.
MPSA64RLRM Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz
MPSA64RLRM Applications
There are a lot of ON Semiconductor
MPSA64RLRM applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 20000 @ 100mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.5V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of -500mA is necessary for high efficiency.The base voltage of the emitter can be kept at 10V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -500mA.In this part, there is a transition frequency of 125MHz.The maximum collector current is 500mA volts.
MPSA64RLRM Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz
MPSA64RLRM Applications
There are a lot of ON Semiconductor
MPSA64RLRM applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MPSA64RLRM More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-226AA
Non-Compliant Through Hole PNP Contains Lead Tape & Box (TB) TO-92-3 -500 mA 3
TRANS PNP DARL 30V 0.5A TO-92
RES SMD 2M OHM 1% 1/10W 0603
OEMs, CMs ONLY (NO BROKERS)
Non-Compliant Through Hole PNP Contains Lead Tape & Box (TB) TO-92-3 -500 mA 3
TRANS PNP DARL 30V 0.5A TO-92
RES SMD 2M OHM 1% 1/10W 0603
OEMs, CMs ONLY (NO BROKERS)
The three parts on the right have similar specifications to MPSA64RLRM.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentRoHS StatusLead FreeLifecycle StatusWeightMax Operating TemperatureMin Operating TemperaturePower Dissipation-MaxhFE MinHeightLengthWidthSupplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)View Compare
-
MPSA64RLRMThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)3SILICON-55°C~150°C TJTape & Box (TB)2009e0Obsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)Other Transistors-30V625mWBOTTOM240not_compliant-500mA30MPSA643Not Qualified1PNPSingle625mWAMPLIFIERPNP - Darlington30V500mA20000 @ 100mA 5V100nA ICBO1.5V @ 100μA, 100mA30V125MHz1.5V125MHz30V10V-500mANon-RoHS CompliantContains Lead--------------
-
Through Hole-TO-923--Bulk2004-------30V----100mA----1NPNSingle350mW--30V100nA---30V-1.5V125MHz30V10V500mARoHS CompliantLead FreeOBSOLETE (Last Updated: 14 hours ago)201mg150°C-65°C625mW100005.33mm5.2mm4.19mm----
-
-Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---55°C~150°C TJTape & Reel (TR)--Obsolete1 (Unlimited)-----------MPSA12-------NPN - Darlington--20000 @ 10mA 5V100nA1V @ 10μA, 10mA------------------TO-92-3625mW20V1.2A
-
-Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---55°C~150°C TJTape & Reel (TR)--Obsolete1 (Unlimited)-----------MPSA18-------NPN--500 @ 10mA 5V50nA ICBO300mV @ 5mA, 50mA---100MHz--------------TO-92-3625mW45V100mA
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
06 December 2023
A Complete Guide to TIP120 NPN Darlington Transistor
Ⅰ. What is a Darlington transistor?Ⅱ. Overview of TIP120Ⅲ. TIP120 symbol, footprint and pin configurationⅣ. What are the features of TIP120 Darlington transistor?Ⅴ. How does the TIP120 Darlington... -
07 December 2023
All You Need to Know About the 74LS32 OR Gate
Ⅰ. What is the 74 series logic chip?Ⅱ. What is 74LS32?Ⅲ. Pin configuration and functions of 74LS32 OR GateⅣ. What are the features of 74LS32 OR Gate?Ⅴ. Internal... -
07 December 2023
TCS3200 RGB Color Sensor Equivalents, Structure, Applications and Usage
Ⅰ. Overview of TCS3200Ⅱ. Features of TCS3200 color sensorⅢ. TCS3200 symbol, footprint and pin configurationⅣ. Structure of TCS3200 color sensorⅤ. Applications of TCS3200 color sensorⅥ. Technical parameters of... -
08 December 2023
NE556 Dual Bipolar Timer Features, Function, Structure, Working Principle, and Applications
Ⅰ. What is a timer?Ⅱ. Overview of NE556Ⅲ. What are the features of NE556 dual timer?Ⅳ. Pin configuration of NE556 dual timerⅤ. Function of NE556 dual timerⅥ. Structure...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.