Central Semiconductor Corp MPSA63
- Part Number:
- MPSA63
- Manufacturer:
- Central Semiconductor Corp
- Ventron No:
- 2463241-MPSA63
- Description:
- TRANS PNP DARL 20V 0.5A TO-92
- Datasheet:
- MPSA63, MMBTA63, PZTA63 MPSA62, 63, 64
Central Semiconductor Corp MPSA63 technical specifications, attributes, parameters and parts with similar specifications to Central Semiconductor Corp MPSA63.
- Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Number of Pins3
- Supplier Device PackageTO-92-3
- Weight201mg
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Published2009
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TerminationThrough Hole
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC-30V
- Max Power Dissipation625mW
- Current Rating-1.2A
- Base Part NumberMPSA63
- Number of Elements1
- PolarityPNP
- Element ConfigurationSingle
- Power Dissipation625mW
- Power - Max625mW
- Transistor TypePNP - Darlington
- Collector Emitter Voltage (VCEO)30V
- Max Collector Current1.2A
- DC Current Gain (hFE) (Min) @ Ic, Vce10000 @ 100mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic1.5V @ 100μA, 100mA
- Collector Emitter Breakdown Voltage30V
- Voltage - Collector Emitter Breakdown (Max)30V
- Current - Collector (Ic) (Max)500mA
- Collector Emitter Saturation Voltage1.5V
- Max Breakdown Voltage30V
- Frequency - Transition125MHz
- Collector Base Voltage (VCBO)-30V
- Emitter Base Voltage (VEBO)-10V
- hFE Min10000
- Continuous Collector Current-500mA
- Height5.33mm
- Length5.2mm
- Width4.19mm
- REACH SVHCNo SVHC
- RoHS StatusNon-RoHS Compliant
- Lead FreeLead Free
MPSA63 Description
MPSA13 is a type of silicon PNP Darlington transistor available in a TO-92 package. It is a Darlington transistor, which means it has two transistors or a pair of identical transistors inside it, connected in a special way, called a Darlington pair. Darlington transistor MPSA13 is designed based on the epitaxial planar process for applications that requires extremely high gain.
MPSA63 Features
Available in a TO-92 package
A Darlington pair
Epitaxial planar process
Low power dissipation of 625 mW
MPSA63 Applications
Audio preamplifier
Audio amplifier stage
Sensor circuit
Switching loads below 0.5A
Motor drive circuit
MPSA13 is a type of silicon PNP Darlington transistor available in a TO-92 package. It is a Darlington transistor, which means it has two transistors or a pair of identical transistors inside it, connected in a special way, called a Darlington pair. Darlington transistor MPSA13 is designed based on the epitaxial planar process for applications that requires extremely high gain.
MPSA63 Features
Available in a TO-92 package
A Darlington pair
Epitaxial planar process
Low power dissipation of 625 mW
MPSA63 Applications
Audio preamplifier
Audio amplifier stage
Sensor circuit
Switching loads below 0.5A
Motor drive circuit
MPSA63 More Descriptions
Transistor-PNP Silicon Darlington Amp BVces-30V Ic=800mA hFE=5000 min TO-92 caseNTE Electronics
Transistor - PNP Silicon Darlington Amp Bvces- 30V; UPC: 768249044192 | NTE Electronics Inc. MPSA63
Transistor-Pnp Silicon Darlington Amp
Transistor - PNP Silicon Darlington Amp Bvces- 30V; UPC: 768249044192 | NTE Electronics Inc. MPSA63
Transistor-Pnp Silicon Darlington Amp
The three parts on the right have similar specifications to MPSA63.
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ImagePart NumberManufacturerLifecycle StatusMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)TerminationMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCMax Power DissipationCurrent RatingBase Part NumberNumber of ElementsPolarityElement ConfigurationPower DissipationPower - MaxTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Collector Emitter Saturation VoltageMax Breakdown VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthREACH SVHCRoHS StatusLead FreeVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):View Compare
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MPSA63OBSOLETE (Last Updated: 3 days ago)Through HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)3TO-92-3201mg-55°C~150°C TJBulk2009Obsolete1 (Unlimited)Through Hole150°C-55°C-30V625mW-1.2AMPSA631PNPSingle625mW625mWPNP - Darlington30V1.2A10000 @ 100mA 5V100nA ICBO1.5V @ 100μA, 100mA30V30V500mA1.5V30V125MHz-30V-10V10000-500mA5.33mm5.2mm4.19mmNo SVHCNon-RoHS CompliantLead Free---------------
-
----------------------------------------------30V1.5V @ 100µA, 100mANPN - DarlingtonTO-92-3-625mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole125MHz20000 @ 100mA, 5V100nA (ICBO)1.2A
-
----------------------------------------------20V1V @ 10µA, 10mANPN - DarlingtonTO-92-3-625mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole-20000 @ 10mA, 5V100nA1.2A
-
--Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-TO-92-3--55°C~150°C TJTape & Reel (TR)-Obsolete1 (Unlimited)------MPSA12----625mWNPN - Darlington--20000 @ 10mA 5V100nA1V @ 10μA, 10mA-20V1.2A---------------------------
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