ON Semiconductor MPSA56RLRPG
- Part Number:
- MPSA56RLRPG
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2472298-MPSA56RLRPG
- Description:
- TRANS PNP 80V 0.5A TO-92
- ECAD Model:
-
- Datasheet:
- MPSA56RLRPG
ON Semiconductor MPSA56RLRPG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MPSA56RLRPG.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Box (TB)
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTIN SILVER COPPER
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- JESD-30 CodeO-PBCY-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Power - Max625mW
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)80V
- Current - Collector (Ic) (Max)500mA
- Transition Frequency50MHz
- Frequency - Transition50MHz
- RoHS StatusROHS3 Compliant
MPSA56RLRPG Overview
DC current gain in this device equals 100 @ 100mA 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 10mA, 100mA.As a result, the part has a transition frequency of 50MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
MPSA56RLRPG Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
a transition frequency of 50MHz
MPSA56RLRPG Applications
There are a lot of Rochester Electronics, LLC
MPSA56RLRPG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 100 @ 100mA 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 10mA, 100mA.As a result, the part has a transition frequency of 50MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
MPSA56RLRPG Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
a transition frequency of 50MHz
MPSA56RLRPG Applications
There are a lot of Rochester Electronics, LLC
MPSA56RLRPG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MPSA56RLRPG More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Tape & Box (TB) Through Hole PNP Single Bipolar (BJT) Transistor 100 @ 100mA 1V 100nA 625mW 50MHz
TRANS PNP 80V 0.5A TO-92 / Trans GP BJT PNP 80V 0.5A 625mW 3-Pin TO-92 Fan-Fold
Transistor; Transistor Type:Bipolar; Transistor Polarity:PNP; Collector Emitter Voltage, V(br)ceo:80V; Continuous Collector Current, Ic:0.5A; Collector Emitter Saturation Voltage, Vce(sat):0.25V; Power Dissipation, Pd:625mW ;RoHS Compliant: Yes
Tape & Box (TB) Through Hole PNP Single Bipolar (BJT) Transistor 100 @ 100mA 1V 100nA 625mW 50MHz
TRANS PNP 80V 0.5A TO-92 / Trans GP BJT PNP 80V 0.5A 625mW 3-Pin TO-92 Fan-Fold
Transistor; Transistor Type:Bipolar; Transistor Polarity:PNP; Collector Emitter Voltage, V(br)ceo:80V; Continuous Collector Current, Ic:0.5A; Collector Emitter Saturation Voltage, Vce(sat):0.25V; Power Dissipation, Pd:625mW ;RoHS Compliant: Yes
The three parts on the right have similar specifications to MPSA56RLRPG.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionRoHS StatusFactory Lead TimePublishedECCN CodeLifecycle StatusMountNumber of PinsWeightMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCCurrent RatingPolarityPower Dissipation-MaxElement ConfigurationPower DissipationCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthLead FreeSupplier Device PackageBase Part NumberView Compare
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MPSA56RLRPGThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)NOSILICON-55°C~150°C TJTape & Box (TB)e1yesObsolete1 (Unlimited)3TIN SILVER COPPERBOTTOM260403O-PBCY-T3COMMERCIAL1SINGLE625mWAMPLIFIERPNPPNP100 @ 100mA 1V100nA250mV @ 10mA, 100mA80V500mA50MHz50MHzROHS3 Compliant------------------------------ -
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)NOSILICON-55°C~150°C TJCut Tape (CT)e3yesLast Time Buy1 (Unlimited)3Matte Tin (Sn)BOTTOMNOT SPECIFIEDNOT SPECIFIED3O-PBCY-T3Not Qualified1SINGLE625mW-NPNNPN80 @ 10mA 10V250nA ICBO500mV @ 2mA, 20mA300V300mA50MHz50MHzROHS3 Compliant8 Weeks2006EAR99--------------------------
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-TO-92---Bulk------------1-----------125MHzRoHS Compliant-2004-OBSOLETE (Last Updated: 14 hours ago)Through Hole3201mg150°C-65°C30V100mANPN625mWSingle350mW30V100nA30V1.5V30V10V10000500mA5.33mm5.2mm4.19mmLead Free--
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Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---55°C~150°C TJTape & Reel (TR)--Obsolete1 (Unlimited)----------625mW--NPN500 @ 10mA 5V50nA ICBO300mV @ 5mA, 50mA45V100mA-100MHz----------------------------TO-92-3MPSA18
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