NXP USA Inc. MPSA56,116
- Part Number:
- MPSA56,116
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2846922-MPSA56,116
- Description:
- TRANS PNP 80V 0.5A SOT54
- Datasheet:
- MPSA56
NXP USA Inc. MPSA56,116 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MPSA56,116.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2009
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- HTS Code8541.21.00.95
- SubcategoryOther Transistors
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberMPSA56
- Pin Count3
- JESD-30 CodeO-PBCY-T3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Power - Max625mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA 1V
- Current - Collector Cutoff (Max)50nA ICBO
- Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)80V
- Current - Collector (Ic) (Max)500mA
- Transition Frequency50MHz
- Frequency - Transition50MHz
- Power Dissipation-Max (Abs)0.625W
- VCEsat-Max0.25 V
- RoHS StatusROHS3 Compliant
MPSA56,116 Overview
In this device, the DC current gain is 100 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 10mA, 100mA.50MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 80V.
MPSA56,116 Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
a transition frequency of 50MHz
MPSA56,116 Applications
There are a lot of NXP USA Inc.
MPSA56,116 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 100 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 10mA, 100mA.50MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 80V.
MPSA56,116 Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
a transition frequency of 50MHz
MPSA56,116 Applications
There are a lot of NXP USA Inc.
MPSA56,116 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MPSA56,116 More Descriptions
Trans GP BJT PNP 80V 0.5A 3-Pin SPT T/R
TRANS PNP 80V 0.5A SOT54
PNP GENERAL PURPOSE TRANSISTO
IC REG LINEAR 1.8V 150MA 4UDFN
TRANS PNP 80V 0.5A SOT54
PNP GENERAL PURPOSE TRANSISTO
IC REG LINEAR 1.8V 150MA 4UDFN
The three parts on the right have similar specifications to MPSA56,116.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionPower Dissipation-Max (Abs)VCEsat-MaxRoHS StatusSupplier Device PackageView Compare
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MPSA56,116Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)NOSILICON150°C TJTape & Reel (TR)2009e3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)8541.21.00.95Other TransistorsBOTTOMNOT SPECIFIEDNOT SPECIFIEDMPSA563O-PBCY-T3Not Qualified1SINGLE625mWSWITCHINGPNPPNP100 @ 100mA 1V50nA ICBO250mV @ 10mA, 100mA80V500mA50MHz50MHz0.625W0.25 VROHS3 Compliant--
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---55°C~150°C TJTape & Reel (TR)--Obsolete1 (Unlimited)--------MPSA12-----625mW--NPN - Darlington20000 @ 10mA 5V100nA1V @ 10μA, 10mA20V1.2A-----TO-92-3
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---55°C~150°C TJTape & Reel (TR)--Obsolete1 (Unlimited)--------MPSA18-----625mW--NPN500 @ 10mA 5V50nA ICBO300mV @ 5mA, 50mA45V100mA-100MHz---TO-92-3
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---55°C~150°C TJTape & Box (TB)--Obsolete1 (Unlimited)--------MPSA05-----625mW--NPN100 @ 100mA 1V100nA250mV @ 10mA, 100mA60V500mA-100MHz---TO-92-3
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