ON Semiconductor MPSA55RLRA
- Part Number:
- MPSA55RLRA
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2466809-MPSA55RLRA
- Description:
- TRANS PNP 60V 0.5A TO92
- ECAD Model:
-
- Datasheet:
- MPSA55RLRA
ON Semiconductor MPSA55RLRA technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MPSA55RLRA.
- MountThrough Hole
- Package / CaseTO-92-3
- PackagingCut Tape (CT)
- Published2007
- JESD-609 Codee0
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- HTS Code8541.21.00.95
- SubcategoryOther Transistors
- Voltage - Rated DC-60V
- Max Power Dissipation625mW
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codenot_compliant
- Current Rating-500mA
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count3
- JESD-30 CodeO-PBCY-T3
- Qualification StatusNot Qualified
- Number of Elements1
- PolarityPNP
- Element ConfigurationSingle
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product50MHz
- Collector Emitter Voltage (VCEO)250mV
- Max Collector Current500mA
- Collector Emitter Breakdown Voltage60V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage250mV
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)4V
- hFE Min100
- DC Current Gain-Min (hFE)100
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
MPSA55RLRA Overview
A collector emitter saturation voltage of 250mV ensures maximum design flexibility.Keeping the emitter base voltage at 4V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-500mA).50MHz is present in the transition frequency.Maximum collector currents can be below 500mA volts.
MPSA55RLRA Features
a collector emitter saturation voltage of 250mV
the emitter base voltage is kept at 4V
the current rating of this device is -500mA
a transition frequency of 50MHz
MPSA55RLRA Applications
There are a lot of ON Semiconductor
MPSA55RLRA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
A collector emitter saturation voltage of 250mV ensures maximum design flexibility.Keeping the emitter base voltage at 4V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-500mA).50MHz is present in the transition frequency.Maximum collector currents can be below 500mA volts.
MPSA55RLRA Features
a collector emitter saturation voltage of 250mV
the emitter base voltage is kept at 4V
the current rating of this device is -500mA
a transition frequency of 50MHz
MPSA55RLRA Applications
There are a lot of ON Semiconductor
MPSA55RLRA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MPSA55RLRA More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
TRANS PNP 60V 0.5A TO92
SS T092 GP XSTR PNP 60V
TRANS PNP 60V 0.5A TO92
SS T092 GP XSTR PNP 60V
The three parts on the right have similar specifications to MPSA55RLRA.
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ImagePart NumberManufacturerMountPackage / CasePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsPolarityElement ConfigurationTransistor ApplicationGain Bandwidth ProductCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinDC Current Gain-Min (hFE)RoHS StatusLead FreeVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Mounting TypeSupplier Device PackageOperating TemperatureBase Part NumberPower - MaxTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionView Compare
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MPSA55RLRAThrough HoleTO-92-3Cut Tape (CT)2007e0Obsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)150°C-55°C8541.21.00.95Other Transistors-60V625mWBOTTOM240not_compliant-500mA303O-PBCY-T3Not Qualified1PNPSingleAMPLIFIER50MHz250mV500mA60V50MHz250mV60V4V100100Non-RoHS CompliantContains Lead--------------------------- -
----------------------------------------20V1V @ 10µA, 10mANPN - DarlingtonTO-92-3-625mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole-20000 @ 10mA, 5V100nA1.2A------------
-
-TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)Tape & Reel (TR)--Obsolete1 (Unlimited)-----------------------------------------------Through HoleTO-92-3-55°C~150°C TJMPSA18625mWNPN500 @ 10mA 5V50nA ICBO300mV @ 5mA, 50mA45V100mA100MHz
-
-TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)Tape & Box (TB)--Obsolete1 (Unlimited)-----------------------------------------------Through HoleTO-92-3-55°C~150°C TJMPSA05625mWNPN100 @ 100mA 1V100nA250mV @ 10mA, 100mA60V500mA100MHz
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