ON Semiconductor MPSA55G
- Part Number:
- MPSA55G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2472296-MPSA55G
- Description:
- TRANS PNP 60V 0.5A TO-92
- ECAD Model:
-
- Datasheet:
- MPSA55G
ON Semiconductor MPSA55G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MPSA55G.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTIN SILVER COPPER
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- JESD-30 CodeO-PBCY-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Power - Max625mW
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)60V
- Current - Collector (Ic) (Max)500mA
- Transition Frequency50MHz
- Frequency - Transition50MHz
- RoHS StatusROHS3 Compliant
MPSA55G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 100mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 10mA, 100mA.A transition frequency of 50MHz is present in the part.A 60V maximal voltage - Collector Emitter Breakdown is present in the device.
MPSA55G Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
a transition frequency of 50MHz
MPSA55G Applications
There are a lot of Rochester Electronics, LLC
MPSA55G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 100mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 10mA, 100mA.A transition frequency of 50MHz is present in the part.A 60V maximal voltage - Collector Emitter Breakdown is present in the device.
MPSA55G Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
a transition frequency of 50MHz
MPSA55G Applications
There are a lot of Rochester Electronics, LLC
MPSA55G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MPSA55G More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Transistor, Bipolar,Si,PNP,Amplifier,VCEO -60VDC,IC 500mA,PD 1.5W,TO-92,hFE 100 | ON Semiconductor MPSA55G
Transistor GP BJT PNP 60V 0.5A 3-Pin TO-92 Bulk
RF TRANSISTOR, PNP, -60V, 50MHZ, TO-92
RF Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage, V(br)ceo:60V; Package/Case:TO-92; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):100; Frequency Min:0.625MHz; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
Transistor, Bipolar,Si,PNP,Amplifier,VCEO -60VDC,IC 500mA,PD 1.5W,TO-92,hFE 100 | ON Semiconductor MPSA55G
Transistor GP BJT PNP 60V 0.5A 3-Pin TO-92 Bulk
RF TRANSISTOR, PNP, -60V, 50MHZ, TO-92
RF Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage, V(br)ceo:60V; Package/Case:TO-92; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):100; Frequency Min:0.625MHz; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
The three parts on the right have similar specifications to MPSA55G.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionRoHS StatusVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Supplier Device PackageBase Part NumberView Compare
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MPSA55GThrough HoleTO-226-3, TO-92-3 (TO-226AA)NOSILICON-55°C~150°C TJBulke1yesObsolete1 (Unlimited)3TIN SILVER COPPERBOTTOM260403O-PBCY-T3COMMERCIAL1SINGLE625mWAMPLIFIERPNPPNP100 @ 100mA 1V100nA250mV @ 10mA, 100mA60V500mA50MHz50MHzROHS3 Compliant----------------- -
--------------------------------30V1.5V @ 100µA, 100mANPN - DarlingtonTO-92-3-625mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole125MHz20000 @ 100mA, 5V100nA (ICBO)1.2A--
-
--------------------------------20V1V @ 10µA, 10mANPN - DarlingtonTO-92-3-625mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole-20000 @ 10mA, 5V100nA1.2A--
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---55°C~150°C TJTape & Reel (TR)--Obsolete1 (Unlimited)----------625mW--NPN500 @ 10mA 5V50nA ICBO300mV @ 5mA, 50mA45V100mA-100MHz---------------TO-92-3MPSA18
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