Fairchild/ON Semiconductor MPSA55
- Part Number:
- MPSA55
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2467645-MPSA55
- Description:
- TRANS PNP 60V 0.5A TO-92
- Datasheet:
- MPSA55 MPSA05, 06, 55, 56
Fairchild/ON Semiconductor MPSA55 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor MPSA55.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTIN SILVER COPPER
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT APPLICABLE
- Time@Peak Reflow Temperature-Max (s)NOT APPLICABLE
- JESD-30 CodeO-PBCY-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Power - Max625mW
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)60V
- Current - Collector (Ic) (Max)500mA
- Transition Frequency50MHz
- Frequency - Transition50MHz
- RoHS StatusROHS3 Compliant
MPSA55 Overview
In this device, the DC current gain is 100 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 10mA, 100mA.50MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 60V.
MPSA55 Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
a transition frequency of 50MHz
MPSA55 Applications
There are a lot of Rochester Electronics, LLC
MPSA55 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 100 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 10mA, 100mA.50MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 60V.
MPSA55 Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
a transition frequency of 50MHz
MPSA55 Applications
There are a lot of Rochester Electronics, LLC
MPSA55 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MPSA55 More Descriptions
Transistor-PNP Silicon Bvceo=60V IC=500ma TO-92 Case General Purpose AmplifierNTE Electronics
Trans GP BJT PNP 60V 0.5A 625mW 3-Pin TO-92
TRANS PNP 60V 0.5A TO92
PNP 500MA 60V TO-226AA
Trans GP BJT PNP 60V 0.5A 625mW 3-Pin TO-92
TRANS PNP 60V 0.5A TO92
PNP 500MA 60V TO-226AA
The three parts on the right have similar specifications to MPSA55.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionRoHS StatusLifecycle StatusMountNumber of PinsWeightPublishedMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCCurrent RatingPolarityPower Dissipation-MaxElement ConfigurationPower DissipationCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthLead FreeVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Supplier Device PackageBase Part NumberView Compare
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MPSA55Through HoleTO-226-3, TO-92-3 (TO-226AA)NOSILICON-55°C~150°C TJTape & Reel (TR)e1yesObsolete1 (Unlimited)3TIN SILVER COPPERBOTTOMNOT APPLICABLENOT APPLICABLEO-PBCY-T3COMMERCIAL1SINGLE625mWAMPLIFIERPNPPNP100 @ 100mA 1V100nA250mV @ 10mA, 100mA60V500mA50MHz50MHzROHS3 Compliant------------------------------------------
-
-TO-92---Bulk-----------1-----------125MHzRoHS CompliantOBSOLETE (Last Updated: 14 hours ago)Through Hole3201mg2004150°C-65°C30V100mANPN625mWSingle350mW30V100nA30V1.5V30V10V10000500mA5.33mm5.2mm4.19mmLead Free----------------
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--------------------------------------------------------20V1V @ 10µA, 10mANPN - DarlingtonTO-92-3-625mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole-20000 @ 10mA, 5V100nA1.2A--
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Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---55°C~150°C TJTape & Reel (TR)--Obsolete1 (Unlimited)---------625mW--NPN500 @ 10mA 5V50nA ICBO300mV @ 5mA, 50mA45V100mA-100MHz----------------------------------------TO-92-3MPSA18
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