Fairchild/ON Semiconductor MPSA55_D26Z
- Part Number:
- MPSA55_D26Z
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2469028-MPSA55_D26Z
- Description:
- TRANS PNP 60V 0.5A TO-92
- ECAD Model:
-
- Datasheet:
- MPSA55_D26Z
Fairchild/ON Semiconductor MPSA55_D26Z technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor MPSA55_D26Z.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device PackageTO-92-3
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Base Part NumberMPSA55
- Power - Max625mW
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)60V
- Current - Collector (Ic) (Max)500mA
- Frequency - Transition50MHz
MPSA55_D26Z Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 10mA, 100mA.TO-92-3 is the supplier device package for this product.This device displays a 60V maximum voltage - Collector Emitter Breakdown.
MPSA55_D26Z Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the supplier device package of TO-92-3
MPSA55_D26Z Applications
There are a lot of ON Semiconductor
MPSA55_D26Z applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 10mA, 100mA.TO-92-3 is the supplier device package for this product.This device displays a 60V maximum voltage - Collector Emitter Breakdown.
MPSA55_D26Z Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the supplier device package of TO-92-3
MPSA55_D26Z Applications
There are a lot of ON Semiconductor
MPSA55_D26Z applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MPSA55_D26Z More Descriptions
Trans GP BJT PNP 60V 0.5A 3-Pin TO-92 T/R
The three parts on the right have similar specifications to MPSA55_D26Z.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Base Part NumberPower - MaxTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):View Compare
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MPSA55_D26ZThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3-55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)MPSA55625mWPNP100 @ 100mA 1V100nA250mV @ 10mA, 100mA60V500mA50MHz--------------- -
----------------30V1.5V @ 100µA, 100mANPN - DarlingtonTO-92-3-625mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole125MHz20000 @ 100mA, 5V100nA (ICBO)1.2A
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3-55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)MPSA12625mWNPN - Darlington20000 @ 10mA 5V100nA1V @ 10μA, 10mA20V1.2A---------------
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3-55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)MPSA18625mWNPN500 @ 10mA 5V50nA ICBO300mV @ 5mA, 50mA45V100mA100MHz--------------
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