ON Semiconductor MPSA44G
- Part Number:
- MPSA44G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2472293-MPSA44G
- Description:
- TRANS NPN 400V 0.3A TO-92
- ECAD Model:
-
- Datasheet:
- MPSA44G
ON Semiconductor MPSA44G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MPSA44G.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Published2006
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- SubcategoryOther Transistors
- Voltage - Rated DC400V
- Max Power Dissipation625mW
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Current Rating300mA
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberMPSA44
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation625mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)400V
- Max Collector Current300mA
- DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA 10V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic750mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage400V
- Transition Frequency20MHz
- Collector Emitter Saturation Voltage750mV
- Collector Base Voltage (VCBO)500V
- Emitter Base Voltage (VEBO)6V
- hFE Min40
- Height5.334mm
- Length5.1816mm
- Width4.191mm
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
MPSA44G Overview
In this device, the DC current gain is 50 @ 10mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 750mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 750mV @ 5mA, 50mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 300mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 20MHz.Single BJT transistor is possible for the collector current to fall as low as 300mA volts at Single BJT transistors maximum.
MPSA44G Features
the DC current gain for this device is 50 @ 10mA 10V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 300mA
a transition frequency of 20MHz
MPSA44G Applications
There are a lot of ON Semiconductor
MPSA44G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 50 @ 10mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 750mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 750mV @ 5mA, 50mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 300mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 20MHz.Single BJT transistor is possible for the collector current to fall as low as 300mA volts at Single BJT transistors maximum.
MPSA44G Features
the DC current gain for this device is 50 @ 10mA 10V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 300mA
a transition frequency of 20MHz
MPSA44G Applications
There are a lot of ON Semiconductor
MPSA44G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MPSA44G More Descriptions
Trans GP BJT NPN 400V 0.3A 3-Pin TO-92 Bulk - Boxed Product (Development Kits)
Small Signal Bipolar Transistor, 0.3A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Transistor, Bipolar,Si,NPN,High Voltage,VCEO 400VDC,IC 300mA,PD 1.5W,TO-92 | ON Semiconductor MPSA44G
High Voltage NPN Bipolar Transistor
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:400V; Collector Emitter Saturation Voltage, Vce(sat):50V; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):50; Package/Case:TO-92 ;RoHS Compliant: Yes
TRANSISTOR, NPN, TO-92; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 400V; Transition Frequency ft: -; Power Dissipation Pd: 625mW; DC Collector Current: 300mA; DC Current Gain hFE: 200hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 750mV; Continuous Collector Current Ic Max: 300mA; Current Ic @ Vce Sat: 50mA; Current Ic Continuous a Max: 300mA; Current Ic hFE: 100mA; Device Marking: MPSA44; Full Power Rating Temperature: 25°C; Hfe Min: 40; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pin Configuration: b; Power Dissipation Ptot Max: 625mW; Voltage Vcbo: 500V
Small Signal Bipolar Transistor, 0.3A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Transistor, Bipolar,Si,NPN,High Voltage,VCEO 400VDC,IC 300mA,PD 1.5W,TO-92 | ON Semiconductor MPSA44G
High Voltage NPN Bipolar Transistor
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:400V; Collector Emitter Saturation Voltage, Vce(sat):50V; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):50; Package/Case:TO-92 ;RoHS Compliant: Yes
TRANSISTOR, NPN, TO-92; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 400V; Transition Frequency ft: -; Power Dissipation Pd: 625mW; DC Collector Current: 300mA; DC Current Gain hFE: 200hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 750mV; Continuous Collector Current Ic Max: 300mA; Current Ic @ Vce Sat: 50mA; Current Ic Continuous a Max: 300mA; Current Ic hFE: 100mA; Device Marking: MPSA44; Full Power Rating Temperature: 25°C; Hfe Min: 40; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pin Configuration: b; Power Dissipation Ptot Max: 625mW; Voltage Vcbo: 500V
The three parts on the right have similar specifications to MPSA44G.
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ImagePart NumberManufacturerLifecycle StatusMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRoHS StatusLead FreeFactory Lead TimeSurface MountJESD-30 CodeConfigurationPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionWeightMax Operating TemperatureMin Operating TemperaturePolarityPower Dissipation-MaxContinuous Collector CurrentSupplier Device PackageView Compare
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MPSA44GLAST SHIPMENTS (Last Updated: 4 days ago)Through HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)3SILICON-55°C~150°C TJBulk2006e1yesObsolete1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)Other Transistors400V625mWBOTTOMNOT SPECIFIED300mANOT SPECIFIEDMPSA443Not Qualified1Single625mWSWITCHINGNPNNPN400V300mA50 @ 10mA 10V500nA750mV @ 5mA, 50mA400V20MHz750mV500V6V405.334mm5.1816mm4.191mmNo SVHCRoHS CompliantLead Free---------------- -
--Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-SILICON-55°C~150°C TJCut Tape (CT)2006e3yesLast Time Buy1 (Unlimited)3EAR99Matte Tin (Sn)---BOTTOMNOT SPECIFIED-NOT SPECIFIED-3Not Qualified1---NPNNPN--80 @ 10mA 10V250nA ICBO500mV @ 2mA, 20mA-50MHz--------ROHS3 Compliant-8 WeeksNOO-PBCY-T3SINGLE625mW300V300mA50MHz-------
-
OBSOLETE (Last Updated: 14 hours ago)Through Hole-TO-923--Bulk2004--------30V---100mA----1Single350mW---30V100nA---30V-1.5V30V10V100005.33mm5.2mm4.19mm-RoHS CompliantLead Free-------125MHz201mg150°C-65°CNPN625mW500mA-
-
--Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---55°C~150°C TJTape & Box (TB)---Obsolete1 (Unlimited)----------MPSA05-------NPN--100 @ 100mA 1V100nA250mV @ 10mA, 100mA----------------625mW60V500mA100MHz------TO-92-3
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