MPSA42RLRMG

ON Semiconductor MPSA42RLRMG

Part Number:
MPSA42RLRMG
Manufacturer:
ON Semiconductor
Ventron No:
2469364-MPSA42RLRMG
Description:
TRANS NPN 300V 0.5A TO-92
ECAD Model:
Datasheet:
MPSA42RLRMG

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Specifications
ON Semiconductor MPSA42RLRMG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MPSA42RLRMG.
  • Lifecycle Status
    LAST SHIPMENTS (Last Updated: 2 days ago)
  • Mounting Type
    Through Hole
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Surface Mount
    NO
  • Number of Pins
    3
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Box (TB)
  • Published
    2010
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    300V
  • Max Power Dissipation
    625mW
  • Terminal Position
    BOTTOM
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    500mA
  • Frequency
    50MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MPSA42
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    625mW
  • Transistor Application
    AMPLIFIER
  • Gain Bandwidth Product
    50MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    300V
  • Max Collector Current
    500mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    40 @ 30mA 10V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 2mA, 20mA
  • Collector Emitter Breakdown Voltage
    300V
  • Transition Frequency
    50MHz
  • Collector Emitter Saturation Voltage
    500mV
  • Max Breakdown Voltage
    300V
  • Collector Base Voltage (VCBO)
    300V
  • Emitter Base Voltage (VEBO)
    6V
  • hFE Min
    25
  • Height
    6.35mm
  • Length
    6.35mm
  • Width
    6.35mm
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
MPSA42RLRMG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 30mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 2mA, 20mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 50MHz.Single BJT transistor can take a breakdown input voltage of 300V volts.During maximum operation, collector current can be as low as 500mA volts.

MPSA42RLRMG Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz


MPSA42RLRMG Applications
There are a lot of ON Semiconductor
MPSA42RLRMG applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MPSA42RLRMG More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Trans GP BJT NPN 300V 0.5A 3-Pin TO-92 Fan-Fold
Transistor; Transistor Type:Bipolar; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:300V; Continuous Collector Current, Ic:0.05A; Collector Emitter Saturation Voltage, Vce(sat):0.5V; Power Dissipation, Pd:625mW ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to MPSA42RLRMG.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Position
    Peak Reflow Temperature (Cel)
    Current Rating
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Elements
    Element Configuration
    Power Dissipation
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Voltage - Collector Emitter Breakdown (Max):
    Vce Saturation (Max) @ Ib, Ic:
    Transistor Type:
    Supplier Device Package:
    Series:
    Power - Max:
    Packaging:
    Package / Case:
    Operating Temperature:
    Mounting Type:
    Frequency - Transition:
    DC Current Gain (hFE) (Min) @ Ic, Vce:
    Current - Collector Cutoff (Max):
    Current - Collector (Ic) (Max):
    Supplier Device Package
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Frequency - Transition
    View Compare
  • MPSA42RLRMG
    MPSA42RLRMG
    LAST SHIPMENTS (Last Updated: 2 days ago)
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    NO
    3
    4.535924g
    SILICON
    -55°C~150°C TJ
    Tape & Box (TB)
    2010
    e1
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin/Silver/Copper (Sn/Ag/Cu)
    Other Transistors
    300V
    625mW
    BOTTOM
    260
    500mA
    50MHz
    40
    MPSA42
    3
    1
    Single
    625mW
    AMPLIFIER
    50MHz
    NPN
    NPN
    300V
    500mA
    40 @ 30mA 10V
    100nA ICBO
    500mV @ 2mA, 20mA
    300V
    50MHz
    500mV
    300V
    300V
    6V
    25
    6.35mm
    6.35mm
    6.35mm
    No
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MPSA12
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    20V
    1V @ 10µA, 10mA
    NPN - Darlington
    TO-92-3
    -
    625mW
    Bulk
    TO-226-3, TO-92-3 (TO-226AA)
    -55°C ~ 150°C (TJ)
    Through Hole
    -
    20000 @ 10mA, 5V
    100nA
    1.2A
    -
    -
    -
    -
    -
  • MPSA12_D27Z
    -
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    -
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    MPSA12
    -
    -
    -
    -
    -
    -
    -
    NPN - Darlington
    -
    -
    20000 @ 10mA 5V
    100nA
    1V @ 10μA, 10mA
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    TO-92-3
    625mW
    20V
    1.2A
    -
  • MPSA18_D27Z
    -
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    -
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    MPSA18
    -
    -
    -
    -
    -
    -
    -
    NPN
    -
    -
    500 @ 10mA 5V
    50nA ICBO
    300mV @ 5mA, 50mA
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    TO-92-3
    625mW
    45V
    100mA
    100MHz
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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