ON Semiconductor MPSA42RLRMG
- Part Number:
- MPSA42RLRMG
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2469364-MPSA42RLRMG
- Description:
- TRANS NPN 300V 0.5A TO-92
- Datasheet:
- MPSA42RLRMG
ON Semiconductor MPSA42RLRMG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MPSA42RLRMG.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Surface MountNO
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Box (TB)
- Published2010
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- SubcategoryOther Transistors
- Voltage - Rated DC300V
- Max Power Dissipation625mW
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Current Rating500mA
- Frequency50MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMPSA42
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation625mW
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product50MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)300V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 30mA 10V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 2mA, 20mA
- Collector Emitter Breakdown Voltage300V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage500mV
- Max Breakdown Voltage300V
- Collector Base Voltage (VCBO)300V
- Emitter Base Voltage (VEBO)6V
- hFE Min25
- Height6.35mm
- Length6.35mm
- Width6.35mm
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
MPSA42RLRMG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 30mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 2mA, 20mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 50MHz.Single BJT transistor can take a breakdown input voltage of 300V volts.During maximum operation, collector current can be as low as 500mA volts.
MPSA42RLRMG Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
MPSA42RLRMG Applications
There are a lot of ON Semiconductor
MPSA42RLRMG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 30mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 2mA, 20mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 50MHz.Single BJT transistor can take a breakdown input voltage of 300V volts.During maximum operation, collector current can be as low as 500mA volts.
MPSA42RLRMG Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
MPSA42RLRMG Applications
There are a lot of ON Semiconductor
MPSA42RLRMG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MPSA42RLRMG More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Trans GP BJT NPN 300V 0.5A 3-Pin TO-92 Fan-Fold
Transistor; Transistor Type:Bipolar; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:300V; Continuous Collector Current, Ic:0.05A; Collector Emitter Saturation Voltage, Vce(sat):0.5V; Power Dissipation, Pd:625mW ;RoHS Compliant: Yes
Trans GP BJT NPN 300V 0.5A 3-Pin TO-92 Fan-Fold
Transistor; Transistor Type:Bipolar; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:300V; Continuous Collector Current, Ic:0.05A; Collector Emitter Saturation Voltage, Vce(sat):0.5V; Power Dissipation, Pd:625mW ;RoHS Compliant: Yes
The three parts on the right have similar specifications to MPSA42RLRMG.
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ImagePart NumberManufacturerLifecycle StatusMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthRadiation HardeningRoHS StatusLead FreeVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Supplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionView Compare
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MPSA42RLRMGLAST SHIPMENTS (Last Updated: 2 days ago)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)NO34.535924gSILICON-55°C~150°C TJTape & Box (TB)2010e1yesObsolete1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)Other Transistors300V625mWBOTTOM260500mA50MHz40MPSA4231Single625mWAMPLIFIER50MHzNPNNPN300V500mA40 @ 30mA 10V100nA ICBO500mV @ 2mA, 20mA300V50MHz500mV300V300V6V256.35mm6.35mm6.35mmNoRoHS CompliantLead Free--------------------
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----------------------------------------------------20V1V @ 10µA, 10mANPN - DarlingtonTO-92-3-625mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole-20000 @ 10mA, 5V100nA1.2A-----
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-Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-----55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)-----------MPSA12-------NPN - Darlington--20000 @ 10mA 5V100nA1V @ 10μA, 10mA---------------------------TO-92-3625mW20V1.2A-
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-Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-----55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)-----------MPSA18-------NPN--500 @ 10mA 5V50nA ICBO300mV @ 5mA, 50mA---------------------------TO-92-3625mW45V100mA100MHz
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