ON Semiconductor MPSA42G
- Part Number:
- MPSA42G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2466032-MPSA42G
- Description:
- TRANS NPN 300V 0.5A TO92
- ECAD Model:
-
- Datasheet:
- MPSA42G
ON Semiconductor MPSA42G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MPSA42G.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTIN SILVER COPPER
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeO-PBCY-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Power - Max625mW
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 1mA 10V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 2mA, 20mA
- Voltage - Collector Emitter Breakdown (Max)300V
- Current - Collector (Ic) (Max)500mA
- Transition Frequency50MHz
- Frequency - Transition50MHz
- RoHS StatusROHS3 Compliant
MPSA42G Overview
This device has a DC current gain of 25 @ 1mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 2mA, 20mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 50MHz.Collector Emitter Breakdown occurs at 300VV - Maximum voltage.
MPSA42G Features
the DC current gain for this device is 25 @ 1mA 10V
the vce saturation(Max) is 500mV @ 2mA, 20mA
a transition frequency of 50MHz
MPSA42G Applications
There are a lot of Rochester Electronics, LLC
MPSA42G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 25 @ 1mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 2mA, 20mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 50MHz.Collector Emitter Breakdown occurs at 300VV - Maximum voltage.
MPSA42G Features
the DC current gain for this device is 25 @ 1mA 10V
the vce saturation(Max) is 500mV @ 2mA, 20mA
a transition frequency of 50MHz
MPSA42G Applications
There are a lot of Rochester Electronics, LLC
MPSA42G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MPSA42G More Descriptions
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 25 @ 1mA 10V 100nA ICBO 625mW 50MHz
NPN Bipolar Small Signal Transistor
Transistor, Bipolar,Si,NPN,High Voltage,VCEO 300VDC,IC 500mA,PD 1.5W,TO-92 | ON Semiconductor MPSA42G
Trans GP BJT NPN 300V 0.5A 625mW 3-Pin TO-92 Box / High Voltage Transistors
BIPOLAR TRANSISTOR, NPN, 300V TO-92
BIPOLAR Transistor, NPN, 300V TO-92; Tra; BIPOLAR Transistor, NPN, 300V TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency Typ ft:50MHz; Power Dissipation Pd:625mW; DC Collector Current:500mA; DC Current Gain hFE:40
NPN Bipolar Small Signal Transistor
Transistor, Bipolar,Si,NPN,High Voltage,VCEO 300VDC,IC 500mA,PD 1.5W,TO-92 | ON Semiconductor MPSA42G
Trans GP BJT NPN 300V 0.5A 625mW 3-Pin TO-92 Box / High Voltage Transistors
BIPOLAR TRANSISTOR, NPN, 300V TO-92
BIPOLAR Transistor, NPN, 300V TO-92; Tra; BIPOLAR Transistor, NPN, 300V TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency Typ ft:50MHz; Power Dissipation Pd:625mW; DC Collector Current:500mA; DC Current Gain hFE:40
The three parts on the right have similar specifications to MPSA42G.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionRoHS StatusFactory Lead TimePublishedECCN CodeVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):View Compare
-
MPSA42GThrough HoleTO-226-3, TO-92-3 (TO-226AA)NOSILICON-55°C~150°C TJBulke1yesObsolete1 (Unlimited)3TIN SILVER COPPERBOTTOMNOT SPECIFIEDNOT SPECIFIED3O-PBCY-T3COMMERCIAL1SINGLE625mWAMPLIFIERNPNNPN25 @ 1mA 10V100nA ICBO500mV @ 2mA, 20mA300V500mA50MHz50MHzROHS3 Compliant------------------ -
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)NOSILICON-55°C~150°C TJCut Tape (CT)e3yesLast Time Buy1 (Unlimited)3Matte Tin (Sn)BOTTOMNOT SPECIFIEDNOT SPECIFIED3O-PBCY-T3Not Qualified1SINGLE625mW-NPNNPN80 @ 10mA 10V250nA ICBO500mV @ 2mA, 20mA300V300mA50MHz50MHzROHS3 Compliant8 Weeks2006EAR99--------------
-
-----------------------------------30V1.5V @ 100µA, 100mANPN - DarlingtonTO-92-3-625mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole125MHz20000 @ 100mA, 5V100nA (ICBO)1.2A
-
-----------------------------------20V1V @ 10µA, 10mANPN - DarlingtonTO-92-3-625mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole-20000 @ 10mA, 5V100nA1.2A
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