Fairchild/ON Semiconductor MPSA29_D27Z
- Part Number:
- MPSA29_D27Z
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3585667-MPSA29_D27Z
- Description:
- TRANS NPN DARL 100V 0.8A TO-92
- Datasheet:
- MPSA29_D27Z
Fairchild/ON Semiconductor MPSA29_D27Z technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor MPSA29_D27Z.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device PackageTO-92-3
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Base Part NumberMPSA29
- Power - Max625mW
- Transistor TypeNPN - Darlington
- DC Current Gain (hFE) (Min) @ Ic, Vce10000 @ 100mA 5V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic1.5V @ 100μA, 100mA
- Voltage - Collector Emitter Breakdown (Max)100V
- Current - Collector (Ic) (Max)800mA
- Frequency - Transition125MHz
MPSA29_D27Z Overview
In this device, the DC current gain is 10000 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 100μA, 100mA.Supplier device package TO-92-3 comes with the product.The device exhibits a collector-emitter breakdown at 100V.
MPSA29_D27Z Features
the DC current gain for this device is 10000 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the supplier device package of TO-92-3
MPSA29_D27Z Applications
There are a lot of ON Semiconductor
MPSA29_D27Z applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 10000 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 100μA, 100mA.Supplier device package TO-92-3 comes with the product.The device exhibits a collector-emitter breakdown at 100V.
MPSA29_D27Z Features
the DC current gain for this device is 10000 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the supplier device package of TO-92-3
MPSA29_D27Z Applications
There are a lot of ON Semiconductor
MPSA29_D27Z applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MPSA29_D27Z More Descriptions
TRANS NPN DARL 100V 0.8A TO-92
Small Signal Bipolar Transistor; Transistor Polarity:NPN; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):10000; Package/Case:TO-92; C-E Breakdown Voltage:100V; DC Collector Current:0.8A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
Small Signal Bipolar Transistor; Transistor Polarity:NPN; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):10000; Package/Case:TO-92; C-E Breakdown Voltage:100V; DC Collector Current:0.8A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
The three parts on the right have similar specifications to MPSA29_D27Z.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Base Part NumberPower - MaxTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):View Compare
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MPSA29_D27ZThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3-55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)MPSA29625mWNPN - Darlington10000 @ 100mA 5V500nA1.5V @ 100μA, 100mA100V800mA125MHz---------------
-
----------------30V1.5V @ 100µA, 100mANPN - DarlingtonTO-92-3-625mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole125MHz20000 @ 100mA, 5V100nA (ICBO)1.2A
-
----------------20V1V @ 10µA, 10mANPN - DarlingtonTO-92-3-625mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole-20000 @ 10mA, 5V100nA1.2A
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3-55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)MPSA12625mWNPN - Darlington20000 @ 10mA 5V100nA1V @ 10μA, 10mA20V1.2A---------------
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