ON Semiconductor MPSA20
- Part Number:
- MPSA20
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2465877-MPSA20
- Description:
- TRANS NPN 40V 0.1A TO92
- Datasheet:
- MPSA20
ON Semiconductor MPSA20 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MPSA20.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTIN LEAD
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count3
- JESD-30 CodeO-PBCY-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Power - Max625mW
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 5mA 10V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic250mV @ 1mA, 10mA
- Voltage - Collector Emitter Breakdown (Max)40V
- Current - Collector (Ic) (Max)100mA
- Transition Frequency125MHz
- Frequency - Transition125MHz
- RoHS StatusROHS3 Compliant
MPSA20 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 5mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 1mA, 10mA.The part has a transition frequency of 125MHz.Device displays Collector Emitter Breakdown (40V maximal voltage).
MPSA20 Features
the DC current gain for this device is 40 @ 5mA 10V
the vce saturation(Max) is 250mV @ 1mA, 10mA
a transition frequency of 125MHz
MPSA20 Applications
There are a lot of Rochester Electronics, LLC
MPSA20 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 5mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 1mA, 10mA.The part has a transition frequency of 125MHz.Device displays Collector Emitter Breakdown (40V maximal voltage).
MPSA20 Features
the DC current gain for this device is 40 @ 5mA 10V
the vce saturation(Max) is 250mV @ 1mA, 10mA
a transition frequency of 125MHz
MPSA20 Applications
There are a lot of Rochester Electronics, LLC
MPSA20 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MPSA20 More Descriptions
Transistor NPN Silicon Darlington Bvceo=40V IC=100ma TO-92 Case For Amplifier ApplicationsNTE Electronics
T-Npn Si- Darl Preamp Rohs Compliant: Yes |Nte Electronics MPSA20
TRANS NPN 40V 0.1A TO92
T-Npn Si- Darl Preamp Rohs Compliant: Yes |Nte Electronics MPSA20
TRANS NPN 40V 0.1A TO92
The three parts on the right have similar specifications to MPSA20.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionRoHS StatusVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Supplier Device PackageBase Part NumberView Compare
-
MPSA20Through HoleTO-226-3, TO-92-3 (TO-226AA)NOSILICON-55°C~150°C TJBulke0noObsolete1 (Unlimited)3TIN LEADBOTTOM240unknown303O-PBCY-T3COMMERCIAL1SINGLE625mWAMPLIFIERNPNNPN40 @ 5mA 10V100nA ICBO250mV @ 1mA, 10mA40V100mA125MHz125MHzROHS3 Compliant-----------------
-
---------------------------------30V1.5V @ 100µA, 100mANPN - DarlingtonTO-92-3-625mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole125MHz20000 @ 100mA, 5V100nA (ICBO)1.2A--
-
---------------------------------20V1V @ 10µA, 10mANPN - DarlingtonTO-92-3-625mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole-20000 @ 10mA, 5V100nA1.2A--
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---55°C~150°C TJTape & Reel (TR)--Obsolete1 (Unlimited)-----------625mW--NPN500 @ 10mA 5V50nA ICBO300mV @ 5mA, 50mA45V100mA-100MHz---------------TO-92-3MPSA18
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