ON Semiconductor MPSA18G
- Part Number:
- MPSA18G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2472281-MPSA18G
- Description:
- TRANS NPN 45V 0.2A TO-92
- ECAD Model:
-
- Datasheet:
- MPSA18G
ON Semiconductor MPSA18G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MPSA18G.
- Lifecycle StatusOBSOLETE (Last Updated: 2 days ago)
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Published2006
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Additional FeatureLOW NOISE
- HTS Code8541.21.00.75
- SubcategoryOther Transistors
- Voltage - Rated DC45V
- Max Power Dissipation625mW
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Current Rating200mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMPSA18
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product160MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)300mV
- Max Collector Current200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce500 @ 10mA 5V
- Current - Collector Cutoff (Max)50nA ICBO
- Vce Saturation (Max) @ Ib, Ic300mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage45V
- Transition Frequency160MHz
- Collector Emitter Saturation Voltage80mV
- Collector Base Voltage (VCBO)45V
- Emitter Base Voltage (VEBO)6.5V
- hFE Min400
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
MPSA18G Overview
This device has a DC current gain of 500 @ 10mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 80mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6.5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 200mA.In this part, there is a transition frequency of 160MHz.The maximum collector current is 200mA volts.
MPSA18G Features
the DC current gain for this device is 500 @ 10mA 5V
a collector emitter saturation voltage of 80mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6.5V
the current rating of this device is 200mA
a transition frequency of 160MHz
MPSA18G Applications
There are a lot of ON Semiconductor
MPSA18G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 500 @ 10mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 80mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6.5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 200mA.In this part, there is a transition frequency of 160MHz.The maximum collector current is 200mA volts.
MPSA18G Features
the DC current gain for this device is 500 @ 10mA 5V
a collector emitter saturation voltage of 80mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6.5V
the current rating of this device is 200mA
a transition frequency of 160MHz
MPSA18G Applications
There are a lot of ON Semiconductor
MPSA18G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MPSA18G More Descriptions
Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Low Noise NPN Bipolar Transistor
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Saturation Voltage, Vce(sat):500V; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):1500; C-E Breakdown Voltage:45V; Collector Current:0.2A RoHS Compliant: Yes
Low Noise NPN Bipolar Transistor
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Saturation Voltage, Vce(sat):500V; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):1500; C-E Breakdown Voltage:45V; Collector Current:0.2A RoHS Compliant: Yes
The three parts on the right have similar specifications to MPSA18G.
-
ImagePart NumberManufacturerLifecycle StatusMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsElement ConfigurationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRoHS StatusLead FreeVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Supplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionView Compare
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MPSA18GOBSOLETE (Last Updated: 2 days ago)Through HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)3SILICON-55°C~150°C TJBulk2006e1yesObsolete1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)LOW NOISE8541.21.00.75Other Transistors45V625mWBOTTOM260200mA40MPSA183Not Qualified1SingleAMPLIFIER160MHzNPNNPN300mV200mA500 @ 10mA 5V50nA ICBO300mV @ 5mA, 50mA45V160MHz80mV45V6.5V400RoHS CompliantLead Free-------------------- -
-----------------------------------------------20V1V @ 10µA, 10mANPN - DarlingtonTO-92-3-625mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole-20000 @ 10mA, 5V100nA1.2A-----
-
--Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)------------MPSA18-------NPN--500 @ 10mA 5V50nA ICBO300mV @ 5mA, 50mA----------------------TO-92-3625mW45V100mA100MHz
-
--Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---55°C~150°C TJTape & Box (TB)---Obsolete1 (Unlimited)------------MPSA05-------NPN--100 @ 100mA 1V100nA250mV @ 10mA, 100mA----------------------TO-92-3625mW60V500mA100MHz
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