ON Semiconductor MPSA14RLRPG
- Part Number:
- MPSA14RLRPG
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2472280-MPSA14RLRPG
- Description:
- TRANS NPN DARL 30V 0.5A TO-92
- Datasheet:
- MPSA14RLRPG
ON Semiconductor MPSA14RLRPG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MPSA14RLRPG.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Surface MountNO
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Box (TB)
- Published2007
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- SubcategoryOther Transistors
- Voltage - Rated DC30V
- Max Power Dissipation625mW
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Current Rating500mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMPSA14
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation625mW
- Transistor ApplicationAMPLIFIER
- Transistor TypeNPN - Darlington
- Collector Emitter Voltage (VCEO)30V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce20000 @ 100mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic1.5V @ 100μA, 100mA
- Collector Emitter Breakdown Voltage30V
- Transition Frequency125MHz
- Collector Emitter Saturation Voltage1.5V
- Frequency - Transition125MHz
- Collector Base Voltage (VCBO)30V
- Emitter Base Voltage (VEBO)10V
- Continuous Collector Current500mA
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
MPSA14RLRPG Overview
In this device, the DC current gain is 20000 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 100μA, 100mA.A 500mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 10V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 125MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MPSA14RLRPG Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 500mA
a transition frequency of 125MHz
MPSA14RLRPG Applications
There are a lot of ON Semiconductor
MPSA14RLRPG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 20000 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 100μA, 100mA.A 500mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 10V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 125MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MPSA14RLRPG Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 500mA
a transition frequency of 125MHz
MPSA14RLRPG Applications
There are a lot of ON Semiconductor
MPSA14RLRPG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MPSA14RLRPG More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Trans Darlington NPN 30V 0.5A 625mW 3-Pin TO-92 Fan-Fold
NPN Bipolar Darlington Transistor
DARLINGTON TRANSISTOR, NPN, 30V, TO-92; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:30V; Transition Frequency Typ, ft:125MHz; Power Dissipation, Pd:625mW; DC Collector Current:500mA; DC Current Gain Max (hfe):20000 ;RoHS Compliant: Yes
Trans Darlington NPN 30V 0.5A 625mW 3-Pin TO-92 Fan-Fold
NPN Bipolar Darlington Transistor
DARLINGTON TRANSISTOR, NPN, 30V, TO-92; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:30V; Transition Frequency Typ, ft:125MHz; Power Dissipation, Pd:625mW; DC Collector Current:500mA; DC Current Gain Max (hfe):20000 ;RoHS Compliant: Yes
The three parts on the right have similar specifications to MPSA14RLRPG.
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ImagePart NumberManufacturerLifecycle StatusMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentRoHS StatusLead FreeMountWeightMax Operating TemperatureMin Operating TemperaturePower Dissipation-MaxhFE MinHeightLengthWidthVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Supplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)View Compare
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MPSA14RLRPGLAST SHIPMENTS (Last Updated: 3 days ago)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)NO3SILICON-55°C~150°C TJTape & Box (TB)2007e1yesObsolete1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)Other Transistors30V625mWBOTTOM260500mA40MPSA143Not Qualified1NPNSingle625mWAMPLIFIERNPN - Darlington30V500mA20000 @ 100mA 5V100nA ICBO1.5V @ 100μA, 100mA30V125MHz1.5V125MHz30V10V500mARoHS CompliantLead Free----------------------------
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OBSOLETE (Last Updated: 14 hours ago)-TO-92-3--Bulk2004--------30V---100mA----1NPNSingle350mW--30V100nA---30V-1.5V125MHz30V10V500mARoHS CompliantLead FreeThrough Hole201mg150°C-65°C625mW100005.33mm5.2mm4.19mm------------------
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-------------------------------------------------------20V1V @ 10µA, 10mANPN - DarlingtonTO-92-3-625mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole-20000 @ 10mA, 5V100nA1.2A----
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-Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)----55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)----------MPSA18-------NPN--500 @ 10mA 5V50nA ICBO300mV @ 5mA, 50mA---100MHz----------------------------TO-92-3625mW45V100mA
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