ON Semiconductor MPSA13RLRP
- Part Number:
- MPSA13RLRP
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2472278-MPSA13RLRP
- Description:
- TRANS NPN DARL 30V 0.5A TO-92
- Datasheet:
- MPSA13, 14
ON Semiconductor MPSA13RLRP technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MPSA13RLRP.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Box (TB)
- Published2005
- JESD-609 Codee0
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- SubcategoryOther Transistors
- Voltage - Rated DC30V
- Max Power Dissipation625mW
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codenot_compliant
- Current Rating500mA
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberMPSA13
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation625mW
- Transistor ApplicationAMPLIFIER
- Transistor TypeNPN - Darlington
- Collector Emitter Voltage (VCEO)30V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce10000 @ 100mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic1.5V @ 100μA, 100mA
- Collector Emitter Breakdown Voltage30V
- Transition Frequency125MHz
- Collector Emitter Saturation Voltage1.5V
- Frequency - Transition125MHz
- Collector Base Voltage (VCBO)30V
- Emitter Base Voltage (VEBO)10V
- Continuous Collector Current500mA
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
MPSA13RLRP Overview
In this device, the DC current gain is 10000 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1.5V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 100μA, 100mA.Maintaining the continuous collector voltage at 500mA is essential for high efficiency.Keeping the emitter base voltage at 10V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (500mA).125MHz is present in the transition frequency.Maximum collector currents can be below 500mA volts.
MPSA13RLRP Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 500mA
a transition frequency of 125MHz
MPSA13RLRP Applications
There are a lot of ON Semiconductor
MPSA13RLRP applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 10000 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1.5V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 100μA, 100mA.Maintaining the continuous collector voltage at 500mA is essential for high efficiency.Keeping the emitter base voltage at 10V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (500mA).125MHz is present in the transition frequency.Maximum collector currents can be below 500mA volts.
MPSA13RLRP Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 500mA
a transition frequency of 125MHz
MPSA13RLRP Applications
There are a lot of ON Semiconductor
MPSA13RLRP applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MPSA13RLRP More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
TRANS NPN DARL 30V 0.5A TO-92
RES SMD 6.2M OHM 5% 2/3W 1210
TRANS NPN DARL 30V 0.5A TO-92
RES SMD 6.2M OHM 5% 2/3W 1210
The three parts on the right have similar specifications to MPSA13RLRP.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentRoHS StatusLead FreeVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Supplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)View Compare
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MPSA13RLRPThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)3SILICON-55°C~150°C TJTape & Box (TB)2005e0Obsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)Other Transistors30V625mWBOTTOM240not_compliant500mA30MPSA133Not Qualified1NPNSingle625mWAMPLIFIERNPN - Darlington30V500mA10000 @ 100mA 5V100nA ICBO1.5V @ 100μA, 100mA30V125MHz1.5V125MHz30V10V500mANon-RoHS CompliantContains Lead-------------------
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---------------------------------------------20V1V @ 10µA, 10mANPN - DarlingtonTO-92-3-625mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole-20000 @ 10mA, 5V100nA1.2A----
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-Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---55°C~150°C TJTape & Reel (TR)--Obsolete1 (Unlimited)-----------MPSA12-------NPN - Darlington--20000 @ 10mA 5V100nA1V @ 10μA, 10mA-----------------------TO-92-3625mW20V1.2A
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-Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---55°C~150°C TJTape & Box (TB)--Obsolete1 (Unlimited)-----------MPSA05-------NPN--100 @ 100mA 1V100nA250mV @ 10mA, 100mA---100MHz-------------------TO-92-3625mW60V500mA
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