ON Semiconductor MPSA12RLRP
- Part Number:
- MPSA12RLRP
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2472318-MPSA12RLRP
- Description:
- TRANS NPN DARL 20V TO-92
- ECAD Model:
-
- Datasheet:
- MPSA12RLRP
ON Semiconductor MPSA12RLRP technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MPSA12RLRP.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Box (TB)
- Published2002
- JESD-609 Codee0
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTin/Lead (Sn/Pb)
- HTS Code8541.21.00.95
- SubcategoryOther Transistors
- Voltage - Rated DC20V
- Max Power Dissipation625mW
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberMPSA12
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation625mW
- Transistor TypeNPN - Darlington
- Collector Emitter Voltage (VCEO)20V
- Max Collector Current100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce20000 @ 10mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic1V @ 10μA, 10mA
- Collector Emitter Breakdown Voltage20V
- Emitter Base Voltage (VEBO)10V
- hFE Min20000
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
MPSA12RLRP Overview
In this device, the DC current gain is 20000 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 10μA, 10mA.Keeping the emitter base voltage at 10V allows for a high level of efficiency.Maximum collector currents can be below 100nA volts.
MPSA12RLRP Features
the DC current gain for this device is 20000 @ 10mA 5V
the vce saturation(Max) is 1V @ 10μA, 10mA
the emitter base voltage is kept at 10V
MPSA12RLRP Applications
There are a lot of ON Semiconductor
MPSA12RLRP applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 20000 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 10μA, 10mA.Keeping the emitter base voltage at 10V allows for a high level of efficiency.Maximum collector currents can be below 100nA volts.
MPSA12RLRP Features
the DC current gain for this device is 20000 @ 10mA 5V
the vce saturation(Max) is 1V @ 10μA, 10mA
the emitter base voltage is kept at 10V
MPSA12RLRP Applications
There are a lot of ON Semiconductor
MPSA12RLRP applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MPSA12RLRP More Descriptions
Small Signal Bipolar Transistor, 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Compliant Through Hole 20000 NPN Contains Lead Tape & Box (TB) TO-92-3 3
Trans Darlington NPN 20V 3-Pin TO-92 T/R
Compliant Through Hole 20000 NPN Contains Lead Tape & Box (TB) TO-92-3 3
Trans Darlington NPN 20V 3-Pin TO-92 T/R
The three parts on the right have similar specifications to MPSA12RLRP.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageEmitter Base Voltage (VEBO)hFE MinRoHS StatusLead FreeSupplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionView Compare
-
MPSA12RLRPThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)3SILICON-55°C~150°C TJTape & Box (TB)2002e0Obsolete1 (Unlimited)3Tin/Lead (Sn/Pb)8541.21.00.95Other Transistors20V625mWBOTTOM240not_compliant30MPSA123Not Qualified1NPNSingle625mWNPN - Darlington20V100nA20000 @ 10mA 5V100nA ICBO1V @ 10μA, 10mA20V10V20000Non-RoHS CompliantContains Lead------ -
-Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---55°C~150°C TJTape & Reel (TR)--Obsolete1 (Unlimited)----------MPSA12------NPN - Darlington--20000 @ 10mA 5V100nA1V @ 10μA, 10mA-----TO-92-3625mW20V1.2A-
-
-Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---55°C~150°C TJTape & Reel (TR)--Obsolete1 (Unlimited)----------MPSA18------NPN--500 @ 10mA 5V50nA ICBO300mV @ 5mA, 50mA-----TO-92-3625mW45V100mA100MHz
-
-Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---55°C~150°C TJTape & Box (TB)--Obsolete1 (Unlimited)----------MPSA05------NPN--100 @ 100mA 1V100nA250mV @ 10mA, 100mA-----TO-92-3625mW60V500mA100MHz
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