ON Semiconductor MPSA12
- Part Number:
- MPSA12
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2472396-MPSA12
- Description:
- TRANS NPN DARL 20V TO-92
- ECAD Model:
-
- Datasheet:
- MPSA12
ON Semiconductor MPSA12 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MPSA12.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Published2002
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTIN SILVER COPPER
- Voltage - Rated DC20V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT APPLICABLE
- Reach Compliance Codeunknown
- Current Rating10mA
- Time@Peak Reflow Temperature-Max (s)NOT APPLICABLE
- Pin Count3
- JESD-30 CodeO-PBCY-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation625mW
- Transistor ApplicationAMPLIFIER
- Transistor TypeNPN - Darlington
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce20000 @ 10mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic1V @ 10μA, 10mA
- Voltage - Collector Emitter Breakdown (Max)20V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)12V
- Continuous Collector Current450mA
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead
MPSA12 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20000 @ 10mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 10μA, 10mA.Single BJT transistor is recommended to keep the continuous collector voltage at 450mA in order to achieve high efficiency.The emitter base voltage can be kept at 12V for high efficiency.The current rating of this fuse is 10mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Device displays Collector Emitter Breakdown (20V maximal voltage).Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
MPSA12 Features
the DC current gain for this device is 20000 @ 10mA 5V
the vce saturation(Max) is 1V @ 10μA, 10mA
the emitter base voltage is kept at 12V
the current rating of this device is 10mA
MPSA12 Applications
There are a lot of Rochester Electronics, LLC
MPSA12 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20000 @ 10mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 10μA, 10mA.Single BJT transistor is recommended to keep the continuous collector voltage at 450mA in order to achieve high efficiency.The emitter base voltage can be kept at 12V for high efficiency.The current rating of this fuse is 10mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Device displays Collector Emitter Breakdown (20V maximal voltage).Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
MPSA12 Features
the DC current gain for this device is 20000 @ 10mA 5V
the vce saturation(Max) is 1V @ 10μA, 10mA
the emitter base voltage is kept at 12V
the current rating of this device is 10mA
MPSA12 Applications
There are a lot of Rochester Electronics, LLC
MPSA12 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MPSA12 More Descriptions
Electronics MPSA12 Transistor NPN Silicon Darlington 20V TO-92 case hFE 20k min
T-NPN SI- DARL PREAMPNTE Electronics
TRANS NPN DARL 20V TO92
T-NPN SI- DARL PREAMPNTE Electronics
TRANS NPN DARL 20V TO92
The three parts on the right have similar specifications to MPSA12.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishVoltage - Rated DCTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Collector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentRoHS StatusLead FreeVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Supplier Device PackageBase Part NumberPower - MaxCurrent - Collector (Ic) (Max)Frequency - TransitionView Compare
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MPSA12Through HoleTO-226-3, TO-92-3 (TO-226AA)NOSILICON-55°C~150°C TJBulk2002e1yesObsolete1 (Unlimited)3TIN SILVER COPPER20VBOTTOMNOT APPLICABLEunknown10mANOT APPLICABLE3O-PBCY-T3COMMERCIAL1NPNSingle625mWAMPLIFIERNPN - Darlington100V1A20000 @ 10mA 5V100nA ICBO1V @ 10μA, 10mA20V100V12V450mAROHS3 CompliantContains Lead-------------------- -
---------------------------------------20V1V @ 10µA, 10mANPN - DarlingtonTO-92-3-625mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole-20000 @ 10mA, 5V100nA1.2A------
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)----------------NPN - Darlington--20000 @ 10mA 5V100nA1V @ 10μA, 10mA20V-------------------TO-92-3MPSA12625mW1.2A-
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---55°C~150°C TJTape & Box (TB)---Obsolete1 (Unlimited)----------------NPN--100 @ 100mA 1V100nA250mV @ 10mA, 100mA60V-------------------TO-92-3MPSA05625mW500mA100MHz
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