ON Semiconductor MPSA06RLRPG
- Part Number:
- MPSA06RLRPG
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2472274-MPSA06RLRPG
- Description:
- TRANS NPN 80V 0.5A TO-92
- ECAD Model:
-
- Datasheet:
- MPSA06RLRPG
ON Semiconductor MPSA06RLRPG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MPSA06RLRPG.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Box (TB)
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTIN SILVER COPPER
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- JESD-30 CodeO-PBCY-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Power - Max625mW
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)80V
- Current - Collector (Ic) (Max)500mA
- Transition Frequency100MHz
- Frequency - Transition100MHz
- RoHS StatusROHS3 Compliant
MPSA06RLRPG Overview
DC current gain in this device equals 100 @ 100mA 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 10mA, 100mA.As a result, the part has a transition frequency of 100MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
MPSA06RLRPG Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
a transition frequency of 100MHz
MPSA06RLRPG Applications
There are a lot of Rochester Electronics, LLC
MPSA06RLRPG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 100 @ 100mA 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 10mA, 100mA.As a result, the part has a transition frequency of 100MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
MPSA06RLRPG Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
a transition frequency of 100MHz
MPSA06RLRPG Applications
There are a lot of Rochester Electronics, LLC
MPSA06RLRPG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MPSA06RLRPG More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Tape & Box (TB) Through Hole NPN Single Bipolar (BJT) Transistor 100 @ 100mA 1V 100nA 625mW 100MHz
Transistor GP BJT NPN 80V 0.5A 3-Pin TO-92 Ammo
Tape & Box (TB) Through Hole NPN Single Bipolar (BJT) Transistor 100 @ 100mA 1V 100nA 625mW 100MHz
Transistor GP BJT NPN 80V 0.5A 3-Pin TO-92 Ammo
The three parts on the right have similar specifications to MPSA06RLRPG.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionRoHS StatusVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Supplier Device PackageBase Part NumberView Compare
-
MPSA06RLRPGThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)NOSILICON-55°C~150°C TJTape & Box (TB)e1yesObsolete1 (Unlimited)3TIN SILVER COPPERBOTTOM260403O-PBCY-T3COMMERCIAL1SINGLE625mWAMPLIFIERNPNNPN100 @ 100mA 1V100nA250mV @ 10mA, 100mA80V500mA100MHz100MHzROHS3 Compliant----------------- -
--------------------------------20V1V @ 10µA, 10mANPN - DarlingtonTO-92-3-625mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole-20000 @ 10mA, 5V100nA1.2A--
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---55°C~150°C TJTape & Reel (TR)--Obsolete1 (Unlimited)----------625mW--NPN500 @ 10mA 5V50nA ICBO300mV @ 5mA, 50mA45V100mA-100MHz---------------TO-92-3MPSA18
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Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---55°C~150°C TJTape & Box (TB)--Obsolete1 (Unlimited)----------625mW--NPN100 @ 100mA 1V100nA250mV @ 10mA, 100mA60V500mA-100MHz---------------TO-92-3MPSA05
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