ON Semiconductor MPSA06RLRAG
- Part Number:
- MPSA06RLRAG
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2468473-MPSA06RLRAG
- Description:
- TRANS NPN 80V 0.5A TO92
- ECAD Model:
-
- Datasheet:
- MPSA06RLRAG
ON Semiconductor MPSA06RLRAG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MPSA06RLRAG.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device PackageTO-92-3
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Power - Max625mW
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)80V
- Current - Collector (Ic) (Max)500mA
- Frequency - Transition100MHz
- RoHS StatusROHS3 Compliant
MPSA06RLRAG Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.This product comes in a TO-92-3 device package from the supplier.Device displays Collector Emitter Breakdown (80V maximal voltage).
MPSA06RLRAG Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the supplier device package of TO-92-3
MPSA06RLRAG Applications
There are a lot of Rochester Electronics, LLC
MPSA06RLRAG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.This product comes in a TO-92-3 device package from the supplier.Device displays Collector Emitter Breakdown (80V maximal voltage).
MPSA06RLRAG Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the supplier device package of TO-92-3
MPSA06RLRAG Applications
There are a lot of Rochester Electronics, LLC
MPSA06RLRAG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MPSA06RLRAG More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Tape & Reel (TR) Through Hole NPN Single Bipolar (BJT) Transistor 100 @ 100mA 1V 100nA 625mW 100MHz
ON Semi MPSA06RLRAG NPN Bipolar Transistor, 0.5 A, 80 V, 3-Pin TO-92 | ON Semiconductor MPSA06RLRAG
TRANSISTOR, BIPOL, NPN, 80V, TO-92-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 625mW; DC Collector Current: 500mA; DC Current Gain hFE: 100hFE; T
Tape & Reel (TR) Through Hole NPN Single Bipolar (BJT) Transistor 100 @ 100mA 1V 100nA 625mW 100MHz
ON Semi MPSA06RLRAG NPN Bipolar Transistor, 0.5 A, 80 V, 3-Pin TO-92 | ON Semiconductor MPSA06RLRAG
TRANSISTOR, BIPOL, NPN, 80V, TO-92-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 625mW; DC Collector Current: 500mA; DC Current Gain hFE: 100hFE; T
The three parts on the right have similar specifications to MPSA06RLRAG.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Power - MaxTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionRoHS StatusFactory Lead TimeSurface MountTransistor Element MaterialPublishedJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPolarity/Channel TypeTransition FrequencyBase Part NumberView Compare
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MPSA06RLRAGThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3-55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)625mWNPN100 @ 100mA 1V100nA250mV @ 10mA, 100mA80V500mA100MHzROHS3 Compliant--------------------- -
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)--55°C~150°C TJCut Tape (CT)Last Time Buy1 (Unlimited)625mWNPN80 @ 10mA 10V250nA ICBO500mV @ 2mA, 20mA300V300mA50MHzROHS3 Compliant8 WeeksNOSILICON2006e3yes3EAR99Matte Tin (Sn)BOTTOMNOT SPECIFIEDNOT SPECIFIED3O-PBCY-T3Not Qualified1SINGLENPN50MHz-
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Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3-55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)625mWNPN - Darlington20000 @ 10mA 5V100nA1V @ 10μA, 10mA20V1.2A---------------------MPSA12
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Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3-55°C~150°C TJTape & Box (TB)Obsolete1 (Unlimited)625mWNPN100 @ 100mA 1V100nA250mV @ 10mA, 100mA60V500mA100MHz--------------------MPSA05
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