ON Semiconductor MPSA06RL1
- Part Number:
- MPSA06RL1
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2472273-MPSA06RL1
- Description:
- TRANS NPN 80V 0.5A TO-92
- Datasheet:
- MPS4126
ON Semiconductor MPSA06RL1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MPSA06RL1.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2009
- JESD-609 Codee0
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Additional FeatureEUROPEAN PART NUMBER
- HTS Code8541.21.00.95
- SubcategoryOther Transistors
- Voltage - Rated DC80V
- Max Power Dissipation625mW
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codenot_compliant
- Current Rating500mA
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberMPSA06
- Pin Count3
- JESD-30 CodeO-PBCY-T3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product100MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)250mV
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
- Collector Emitter Breakdown Voltage80V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage250mV
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)4V
- hFE Min100
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
MPSA06RL1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 100mA 1V.The collector emitter saturation voltage is 250mV, which allows for maximum design flexibility.When VCE saturation is 250mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 4V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.In the part, the transition frequency is 100MHz.A maximum collector current of 500mA volts can be achieved.
MPSA06RL1 Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MPSA06RL1 Applications
There are a lot of ON Semiconductor
MPSA06RL1 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 100mA 1V.The collector emitter saturation voltage is 250mV, which allows for maximum design flexibility.When VCE saturation is 250mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 4V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.In the part, the transition frequency is 100MHz.A maximum collector current of 500mA volts can be achieved.
MPSA06RL1 Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MPSA06RL1 Applications
There are a lot of ON Semiconductor
MPSA06RL1 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MPSA06RL1 More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Compliant Through Hole 100 NPN Contains Lead TO-92-3 500 mA 80 V
TRANS NPN 80V 0.5A TO-92
RES SMD 470 OHM 5% 2/3W 1210
Compliant Through Hole 100 NPN Contains Lead TO-92-3 500 mA 80 V
TRANS NPN 80V 0.5A TO-92
RES SMD 470 OHM 5% 2/3W 1210
The three parts on the right have similar specifications to MPSA06RL1.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsElement ConfigurationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRoHS StatusLead FreeLifecycle StatusNumber of PinsWeightMax Operating TemperatureMin Operating TemperaturePolarityPower Dissipation-MaxPower DissipationFrequency - TransitionContinuous Collector CurrentHeightLengthWidthVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Supplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)View Compare
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MPSA06RL1Through HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)SILICON-55°C~150°C TJTape & Reel (TR)2009e0Obsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)EUROPEAN PART NUMBER8541.21.00.95Other Transistors80V625mWBOTTOM240not_compliant500mA30MPSA063O-PBCY-T3Not Qualified1SingleAMPLIFIER100MHzNPNNPN250mV500mA100 @ 100mA 1V100nA250mV @ 10mA, 100mA80V100MHz250mV80V4V100Non-RoHS CompliantContains Lead--------------------------------
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Through Hole-TO-92--Bulk2004---------30V----100mA-----1Single----30V100nA---30V-1.5V30V10V10000RoHS CompliantLead FreeOBSOLETE (Last Updated: 14 hours ago)3201mg150°C-65°CNPN625mW350mW125MHz500mA5.33mm5.2mm4.19mm------------------
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-----------------------------------------------------------20V1V @ 10µA, 10mANPN - DarlingtonTO-92-3-625mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole-20000 @ 10mA, 5V100nA1.2A----
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-Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)--55°C~150°C TJTape & Box (TB)--Obsolete1 (Unlimited)-------------MPSA05--------NPN--100 @ 100mA 1V100nA250mV @ 10mA, 100mA----------------100MHz------------------TO-92-3625mW60V500mA
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