Fairchild/ON Semiconductor MPSA06
- Part Number:
- MPSA06
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2465282-MPSA06
- Description:
- TRANS NPN 80V 0.5A TO-92
- Datasheet:
- MPSA06
Fairchild/ON Semiconductor MPSA06 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor MPSA06.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Number of Pins3
- Supplier Device PackageTO-92-3
- Weight201mg
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Published2007
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TerminationThrough Hole
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC80V
- Max Power Dissipation625mW
- Current Rating500mA
- Frequency100MHz
- Base Part NumberMPSA06
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation625mW
- Power - Max625mW
- Gain Bandwidth Product100MHz
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
- Collector Emitter Breakdown Voltage80V
- Voltage - Collector Emitter Breakdown (Max)80V
- Current - Collector (Ic) (Max)500mA
- Max Frequency100MHz
- Collector Emitter Saturation Voltage250mV
- Frequency - Transition100MHz
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)4V
- hFE Min100
- Height5.33mm
- Length5.21mm
- Width4.19mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MPSA06 Description
The MPSA06 is an 80V NPN General-purpose Transistor designed for amplifier applications at collector current up to 300mA. This product is general usage and suitable for many different applications.
MPSA06 Applications Audio, Signal Processing
MPSA06 Applications Audio, Signal Processing
MPSA06 More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Bipolar Transistors - BJT NPN Transistor Medium Power
500 mA, 80 V NPN Small Signal Bipolar Junction Transistor
Transistor GP BJT NPN 80V 0.5A 3-Pin TO-92 Bulk - Bulk
MPSAXX Series 80 V CE Breakdown 0.5 A NPN General Purpose Amplifier - TO-92
Transistor NPN MPSA06 FAIRCHILD milliampere=500 TO92
Transistor, NPN, 80V, 0.5A, TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:100MHz; Power Dissipation
NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33.
Transistor, Npn, 80V, 0.5A, To-226Aa; Transistor Polarity:Npn; Collector Emitter Voltage Max:80V; Continuous Collector Current:500Ma; Power Dissipation:625Mw; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi MPSA06.
TRANSISTOR, NPN, 80V, 0.5A, TO-92; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 625mW; DC Collector Current: 500mA; DC Current Gain hFE: 100hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 250mV; Current Ic Continuous a Max: 100mA; Gain Bandwidth ft Typ: 100MHz; Hfe Min: 100; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Ptot Max: 625mW; Termination Type: Through Hole
Bipolar Transistors - BJT NPN Transistor Medium Power
500 mA, 80 V NPN Small Signal Bipolar Junction Transistor
Transistor GP BJT NPN 80V 0.5A 3-Pin TO-92 Bulk - Bulk
MPSAXX Series 80 V CE Breakdown 0.5 A NPN General Purpose Amplifier - TO-92
Transistor NPN MPSA06 FAIRCHILD milliampere=500 TO92
Transistor, NPN, 80V, 0.5A, TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:100MHz; Power Dissipation
NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33.
Transistor, Npn, 80V, 0.5A, To-226Aa; Transistor Polarity:Npn; Collector Emitter Voltage Max:80V; Continuous Collector Current:500Ma; Power Dissipation:625Mw; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi MPSA06.
TRANSISTOR, NPN, 80V, 0.5A, TO-92; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 625mW; DC Collector Current: 500mA; DC Current Gain hFE: 100hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 250mV; Current Ic Continuous a Max: 100mA; Gain Bandwidth ft Typ: 100MHz; Hfe Min: 100; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Ptot Max: 625mW; Termination Type: Through Hole
The three parts on the right have similar specifications to MPSA06.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)TerminationMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyBase Part NumberNumber of ElementsPolarityElement ConfigurationPower DissipationPower - MaxGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Max FrequencyCollector Emitter Saturation VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreePower Dissipation-MaxContinuous Collector CurrentVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):View Compare
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MPSA06ACTIVE (Last Updated: 3 days ago)12 WeeksThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)3TO-92-3201mg-55°C~150°C TJBulk2007Active1 (Unlimited)Through Hole150°C-55°C80V625mW500mA100MHzMPSA061NPNSingle625mW625mW100MHzNPN80V500mA100 @ 100mA 1V100nA250mV @ 10mA, 100mA80V80V500mA100MHz250mV100MHz80V4V1005.33mm5.21mm4.19mmNo SVHCNoROHS3 CompliantLead Free-----------------
-
OBSOLETE (Last Updated: 14 hours ago)-Through Hole-TO-923-201mg-Bulk2004---150°C-65°C30V-100mA--1NPNSingle350mW---30V100nA---30V---1.5V125MHz30V10V100005.33mm5.2mm4.19mm--RoHS CompliantLead Free625mW500mA--------------
-
---------------------------------------------------20V1V @ 10µA, 10mANPN - DarlingtonTO-92-3-625mWBulkTO-226-3, TO-92-3 (TO-226AA)-55°C ~ 150°C (TJ)Through Hole-20000 @ 10mA, 5V100nA1.2A
-
---Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-TO-92-3--55°C~150°C TJTape & Reel (TR)-Obsolete1 (Unlimited)-------MPSA18----625mW-NPN--500 @ 10mA 5V50nA ICBO300mV @ 5mA, 50mA-45V100mA--100MHz--------------------------
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