ON Semiconductor MPSA05G
- Part Number:
- MPSA05G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2472226-MPSA05G
- Description:
- TRANS NPN 60V 0.5A TO-92
- ECAD Model:
-
- Datasheet:
- MPSA05G
ON Semiconductor MPSA05G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MPSA05G.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- JESD-609 Codee1
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTIN SILVER COPPER
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- JESD-30 CodeO-PBCY-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Power - Max625mW
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)60V
- Current - Collector (Ic) (Max)500mA
- Transition Frequency100MHz
- Frequency - Transition100MHz
- RoHS StatusROHS3 Compliant
MPSA05G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 10mA, 100mA.Parts of this part have transition frequencies of 100MHz.This device displays a 60V maximum voltage - Collector Emitter Breakdown.
MPSA05G Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
a transition frequency of 100MHz
MPSA05G Applications
There are a lot of Rochester Electronics, LLC
MPSA05G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 10mA, 100mA.Parts of this part have transition frequencies of 100MHz.This device displays a 60V maximum voltage - Collector Emitter Breakdown.
MPSA05G Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
a transition frequency of 100MHz
MPSA05G Applications
There are a lot of Rochester Electronics, LLC
MPSA05G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MPSA05G More Descriptions
Transistor, Bipolar,Si,NPN,Amplifier,VCEO 60VDC,IC 500mA,PD 1.5W,TO-92,hFE 100
NPN Bipolar Small Signal Transistor
Transistor GP BJT NPN 60V 0.5A 3-Pin TO-92 Bulk
BIPOLAR TRANSISTOR, NPN, 60V, TO-92; Tra; BIPOLAR TRANSISTOR, NPN, 60V, TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:100MHz; Power Dissipation Pd:625mW; DC Collector Current:500mA; DC Current Gain hFE:100; No. of Pins:3
NPN Bipolar Small Signal Transistor
Transistor GP BJT NPN 60V 0.5A 3-Pin TO-92 Bulk
BIPOLAR TRANSISTOR, NPN, 60V, TO-92; Tra; BIPOLAR TRANSISTOR, NPN, 60V, TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:100MHz; Power Dissipation Pd:625mW; DC Collector Current:500mA; DC Current Gain hFE:100; No. of Pins:3
The three parts on the right have similar specifications to MPSA05G.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionRoHS StatusLifecycle StatusMountNumber of PinsWeightPublishedMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCCurrent RatingPolarityPower Dissipation-MaxElement ConfigurationPower DissipationCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthLead FreeSupplier Device PackageBase Part NumberView Compare
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MPSA05GThrough HoleTO-226-3, TO-92-3 (TO-226AA)NOSILICON-55°C~150°C TJBulke1noObsolete1 (Unlimited)3TIN SILVER COPPERBOTTOM260403O-PBCY-T3COMMERCIAL1SINGLE625mWAMPLIFIERNPNNPN100 @ 100mA 1V100nA250mV @ 10mA, 100mA60V500mA100MHz100MHzROHS3 Compliant---------------------------- -
-TO-92---Bulk------------1-----------125MHzRoHS CompliantOBSOLETE (Last Updated: 14 hours ago)Through Hole3201mg2004150°C-65°C30V100mANPN625mWSingle350mW30V100nA30V1.5V30V10V10000500mA5.33mm5.2mm4.19mmLead Free--
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---55°C~150°C TJTape & Reel (TR)--Obsolete1 (Unlimited)----------625mW--NPN - Darlington20000 @ 10mA 5V100nA1V @ 10μA, 10mA20V1.2A----------------------------TO-92-3MPSA12
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---55°C~150°C TJTape & Box (TB)--Obsolete1 (Unlimited)----------625mW--NPN100 @ 100mA 1V100nA250mV @ 10mA, 100mA60V500mA-100MHz--------------------------TO-92-3MPSA05
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