ON Semiconductor MPS3638AG
- Part Number:
- MPS3638AG
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2846210-MPS3638AG
- Description:
- TRANS PNP 25V 0.5A TO92
- ECAD Model:
-
- Datasheet:
- MPS3638AG
ON Semiconductor MPS3638AG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MPS3638AG.
- Lifecycle StatusOBSOLETE (Last Updated: 1 day ago)
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Published2006
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- HTS Code8541.21.00.75
- SubcategoryOther Transistors
- Voltage - Rated DC-25V
- Max Power Dissipation625mW
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Current Rating-500mA
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product150MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)1V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 300mA 2V
- Current - Collector Cutoff (Max)35nA
- Vce Saturation (Max) @ Ib, Ic1V @ 30mA, 300mA
- Collector Emitter Breakdown Voltage25V
- Current - Collector (Ic) (Max)500mA
- Transition Frequency150MHz
- Collector Emitter Saturation Voltage-1V
- Collector Base Voltage (VCBO)-25V
- Emitter Base Voltage (VEBO)4V
- hFE Min80
- Turn Off Time-Max (toff)170ns
- Turn On Time-Max (ton)75ns
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
MPS3638AG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 300mA 2V.With a collector emitter saturation voltage of -1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 30mA, 300mA.If the emitter base voltage is kept at 4V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.A transition frequency of 150MHz is present in the part.Collector current can be as low as 500mA volts at its maximum.
MPS3638AG Features
the DC current gain for this device is 20 @ 300mA 2V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 30mA, 300mA
the emitter base voltage is kept at 4V
the current rating of this device is -500mA
a transition frequency of 150MHz
MPS3638AG Applications
There are a lot of ON Semiconductor
MPS3638AG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 300mA 2V.With a collector emitter saturation voltage of -1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 30mA, 300mA.If the emitter base voltage is kept at 4V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.A transition frequency of 150MHz is present in the part.Collector current can be as low as 500mA volts at its maximum.
MPS3638AG Features
the DC current gain for this device is 20 @ 300mA 2V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 30mA, 300mA
the emitter base voltage is kept at 4V
the current rating of this device is -500mA
a transition frequency of 150MHz
MPS3638AG Applications
There are a lot of ON Semiconductor
MPS3638AG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MPS3638AG More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Bipolar Transistor, Pnp, -25V
Compliant Through Hole 80 PNP Lead Free Bulk TO-92-3 -500 mA
Bipolar Transistor, Pnp, -25V
Compliant Through Hole 80 PNP Lead Free Bulk TO-92-3 -500 mA
The three parts on the right have similar specifications to MPS3638AG.
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ImagePart NumberManufacturerLifecycle StatusMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsElement ConfigurationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCurrent - Collector (Ic) (Max)Transition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinTurn Off Time-Max (toff)Turn On Time-Max (ton)RoHS StatusLead FreeSupplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Frequency - TransitionReach Compliance CodeFrequencyBase Part NumberPower DissipationView Compare
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MPS3638AGOBSOLETE (Last Updated: 1 day ago)Through HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)3SILICON-55°C~150°C TJBulk2006e1yesObsolete1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)8541.21.00.75Other Transistors-25V625mWBOTTOM260-500mA403Not Qualified1SingleSWITCHING150MHzPNPPNP1V500mA20 @ 300mA 2V35nA1V @ 30mA, 300mA25V500mA150MHz-1V-25V4V80170ns75nsRoHS CompliantLead Free--------- -
--Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---55°C~150°C TJTape & Box (TB)---Obsolete1 (Unlimited)------------------PNP--30 @ 50mA 5V100nA ICBO250mV @ 5mA, 50mA-800mA---------TO-92-3625mW30V100MHz----
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--Through HoleTO-226-3, TO-92-3 (TO-226AA)---55°C~150°C TJBulk---Obsolete1 (Unlimited)------------------PNP--30 @ 50mA 5V100nA ICBO250mV @ 5mA, 50mA-800mA-------ROHS3 Compliant-TO-92-3625mW30V100MHz----
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LAST SHIPMENTS (Last Updated: 1 week ago)Through HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)3SILICON-55°C~150°C TJTape & Reel (TR)2006e0noObsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)-Other Transistors15V625mWBOTTOM240300mA303Not Qualified1SingleSWITCHING350MHzNPNNPN15V300mA30 @ 30mA 400mV500nA500mV @ 30mA, 300mA15V-350MHz500mV40V5V3028ns-Non-RoHS CompliantContains Lead----not_compliant350MHzMPS3646625mW
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