ON Semiconductor MMUN2216LT1G
- Part Number:
- MMUN2216LT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2470802-MMUN2216LT1G
- Description:
- TRANS PREBIAS NPN 0.4W SOT23-3
- Datasheet:
- MMUN2216LT1G
ON Semiconductor MMUN2216LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMUN2216LT1G.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time4 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureBUILT-IN BIAS RESISTOR
- SubcategoryBIP General Purpose Small Signals
- Voltage - Rated DC50V
- Max Power Dissipation400mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating100mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMMUN22**L
- Pin Count3
- Max Output Current100mA
- Operating Supply Voltage50V
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation246mW
- Transistor ApplicationSWITCHING
- Halogen FreeHalogen Free
- Transistor TypeNPN - Pre-Biased
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 5mA 10V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 1mA, 10mA
- Collector Emitter Breakdown Voltage50V
- Collector Emitter Saturation Voltage250mV
- Max Breakdown Voltage50V
- hFE Min160
- Resistor - Base (R1)4.7 k Ω
- Continuous Collector Current100mA
- Height940μm
- Length2.9mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMUN2216LT1G Description
The ON Semiconductor MMUN2216LT1G with Monolithic Bias Resistor Network is designed to replace a single device and its external resistor bias network.
MMUN2216LT1G Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable
MMUN2216LT1G Applications
Automotive and Other Applications
The ON Semiconductor MMUN2216LT1G with Monolithic Bias Resistor Network is designed to replace a single device and its external resistor bias network.
MMUN2216LT1G Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable
MMUN2216LT1G Applications
Automotive and Other Applications
MMUN2216LT1G More Descriptions
Trans Digital BJT NPN 50V 100mA 400mW Automotive 3-Pin SOT-23 T/R
MMUN Series 50 V 100 mA 4.7 kOhm NPN Silicon Bias Resistor Transistor - SOT-23
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
160@5mA,10V 1 NPN - Pre Biased 400mW 100mA 50V 500nA SOT-23(TO-236) Digital Transistors ROHS
NPN Bipolar Digital Transistor (BRT)
MMUN2216LT1G NPN Digi Transistor,100mA 50V 4.7 kOhm,Ratio Of None,3-Pin SOT-23 | ON Semiconductor MMUN2216LT1G
Transistor, DIGITAL, SOT-23; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Current Ic:100mA;
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications.
TRANSISTOR, DIGITAL, SOT-23; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: -; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-23; No. of Pins: 3 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): -250mV; Continuous Collector Current Ic Max: 100mA; Current Ic Continuous a Max: 100mA; Current Ic hFE: 5mA; DC Collector Current: 100mA; DC Current Gain hFE: 350hFE; Hfe Min: 160; No. of Pins: 3Pins; No. of Transistors: 1; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Pin Configuration: 2; Power Dissipation Pd: 246mW; Power Dissipation Ptot Max: 200mW; Resistance R1: 4.7kohm; SMD Marking: A8F; Transistor Case Style: SOT-23; Transistor Type: Bias Resistor (BRT); Voltage Vcbo: 50V
MMUN Series 50 V 100 mA 4.7 kOhm NPN Silicon Bias Resistor Transistor - SOT-23
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
160@5mA,10V 1 NPN - Pre Biased 400mW 100mA 50V 500nA SOT-23(TO-236) Digital Transistors ROHS
NPN Bipolar Digital Transistor (BRT)
MMUN2216LT1G NPN Digi Transistor,100mA 50V 4.7 kOhm,Ratio Of None,3-Pin SOT-23 | ON Semiconductor MMUN2216LT1G
Transistor, DIGITAL, SOT-23; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Current Ic:100mA;
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications.
TRANSISTOR, DIGITAL, SOT-23; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: -; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-23; No. of Pins: 3 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): -250mV; Continuous Collector Current Ic Max: 100mA; Current Ic Continuous a Max: 100mA; Current Ic hFE: 5mA; DC Collector Current: 100mA; DC Current Gain hFE: 350hFE; Hfe Min: 160; No. of Pins: 3Pins; No. of Transistors: 1; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Pin Configuration: 2; Power Dissipation Pd: 246mW; Power Dissipation Ptot Max: 200mW; Resistance R1: 4.7kohm; SMD Marking: A8F; Transistor Case Style: SOT-23; Transistor Type: Bias Resistor (BRT); Voltage Vcbo: 50V
The three parts on the right have similar specifications to MMUN2216LT1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeMax Operating TemperatureMin Operating TemperatureAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountMax Output CurrentOperating Supply VoltageNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationHalogen FreeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageMax Breakdown VoltagehFE MinResistor - Base (R1)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeResistor - Emitter Base (R2)Terminal FinishQualification StatusView Compare
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MMUN2216LT1GACTIVE (Last Updated: 1 day ago)4 WeeksTinSurface MountTO-236-3, SC-59, SOT-23-3YES3Tape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99150°C-55°CBUILT-IN BIAS RESISTORBIP General Purpose Small Signals50V400mWDUALGULL WING260100mA40MMUN22**L3100mA50V1NPNSingle246mWSWITCHINGHalogen FreeNPN - Pre-Biased50V100mA160 @ 5mA 10V500nA250mV @ 1mA, 10mA50V250mV50V1604.7 k Ω100mA940μm2.9mm1.3mmNo SVHCNoROHS3 CompliantLead Free----
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ACTIVE (Last Updated: 5 days ago)4 WeeksTinSurface MountTO-236-3, SC-59, SOT-23-3YES3Tape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99150°C-55°CBUILT-IN BIAS RESISTOR RATIO 1BIP General Purpose Small Signal-50V246mWDUALGULL WING260-100mA40MMUN21**L3--1PNPSingle246mWSWITCHINGHalogen FreePNP - Pre-Biased50V100mA35 @ 5mA 10V500nA250mV @ 300μA, 10mA50V-50V3510 k Ω100mA----NoROHS3 CompliantLead Free10 k Ω--
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ACTIVE (Last Updated: 3 hours ago)4 WeeksTinSurface MountTO-236-3, SC-59, SOT-23-3YES3Tape & Reel (TR)2004e3yesActive1 (Unlimited)3EAR99150°C-55°CBUILT-IN BIAS RESISTOR RATIO IS 2.14BIP General Purpose Small Signal50V246mWDUALGULL WING260100mA40MMUN22**L3--1NPNSingle246mWSWITCHINGHalogen FreeNPN - Pre-Biased50V100mA80 @ 5mA 10V500nA250mV @ 1mA, 10mA50V-50V8022 k Ω100mA----NoROHS3 CompliantLead Free47 k Ω--
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ACTIVE (Last Updated: 11 hours ago)2 Weeks-Surface MountTO-236-3, SC-59, SOT-23-3YES3Tape & Reel (TR)2005e3yesActive1 (Unlimited)3EAR99150°C-55°CBUILT-IN BIAS RESISTOR RATIO 1BIP General Purpose Small Signal-50V246mWDUALGULL WING260-100mA40MMUN21**L3--1PNPSingle246mWSWITCHINGHalogen FreePNP - Pre-Biased250mV100mA3 @ 5mA 10V500nA250mV @ 5mA, 10mA50V---1 k Ω100mA-----ROHS3 CompliantLead Free1 k ΩTin (Sn)Not Qualified
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