ON Semiconductor MMUN2134LT1G

Name: MMUN2134LT1G
Brand: ON Semiconductor
SKU: 3585629-MMUN2134LT1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MMUN2134LT1G

Manufacturer:: ON Semiconductor

Ventron No:: 3585629-MMUN2134LT1G

Description:: TRANS PREBIAS PNP 246MW SOT23-3

ECAD Model:

Datasheet:: MMUN2134LT1G

Specifications

ON Semiconductor MMUN2134LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMUN2134LT1G.

Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Factory Lead Time
2 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Additional Feature
BUILT-IN BIAS RESISTOR RATIO 0.47
Subcategory
BIP General Purpose Small Signals
Voltage - Rated DC
-50V
Max Power Dissipation
246mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-100mA
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
MMUN21**L
Pin Count
3
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Power Dissipation
246mW
Transistor Application
SWITCHING
Halogen Free
Halogen Free
Transistor Type
PNP - Pre-Biased
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 5mA 10V
Current - Collector Cutoff (Max)
500nA
Vce Saturation (Max) @ Ib, Ic
250mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
250mV
Max Breakdown Voltage
50V
hFE Min
80
Resistor - Base (R1)
22 k Ω
Continuous Collector Current
100mA
Resistor - Emitter Base (R2)
47 k Ω
Height
1.01mm
Length
2.9mm
Width
1.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

MMUN2134LT1G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet MMUN2134LT1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MMUN2134LT1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

MMUN2134LT1G More Descriptions

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
ON SEMICONDUCTOR MMUN2134LT1G. TRANSISTOR, PRE-BIASED, PNP, 50V, 22/47KOHM, SOT-23
Trans Digital BJT PNP 50V 100mA 400mW 3-Pin SOT-23 T/R
MMUN Series 50 V 100 mA 47 kOhm PNP Pre-Biased Digital Transistor - SOT-23-3
PNP Bipolar Digital Transistor (BRT)
MMUN2134LT1G PNP Digital Transistor,100mA 50VDC 22 kOhm,Ratio Of.47,3-Pin SOT-23 | ON Semiconductor MMUN2134LT1G

Product Comparison

The three parts on the right have similar specifications to MMUN2134LT1G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Number of Pins

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Max Operating Temperature

Min Operating Temperature

Additional Feature

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Polarity

Element Configuration

Power Dissipation

Transistor Application

Halogen Free

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Max Breakdown Voltage

hFE Min

Resistor - Base (R1)

Continuous Collector Current

Resistor - Emitter Base (R2)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Mount

Reach Compliance Code

Qualification Status

Transistor Element Material

Configuration

Power - Max

Contact Plating

View Compare
MMUN2134LT1G

ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

2 Weeks

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

3

Tape & Reel (TR)

2008

e3

yes

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

150°C

-55°C

BUILT-IN BIAS RESISTOR RATIO 0.47

BIP General Purpose Small Signals

-50V

246mW

DUAL

GULL WING

260

-100mA

40

MMUN21**L

3

1

PNP

Single

246mW

SWITCHING

Halogen Free

PNP - Pre-Biased

50V

100mA

80 @ 5mA 10V

500nA

250mV @ 1mA, 10mA

50V

250mV

50V

80

22 k Ω

100mA

47 k Ω

1.01mm

2.9mm

1.3mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-
MMUN2211LT1

ON Semiconductor

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

3

Cut Tape (CT)

2007

e0

-

Obsolete

1 (Unlimited)

3

EAR99

Tin/Lead (Sn/Pb)

150°C

-55°C

BUILT-IN BIAS RESISTOR RATIO IS 1

BIP General Purpose Small Signal

50V

246mW

DUAL

GULL WING

240

100mA

30

MMUN22**L

3

1

NPN

Single

246mW

SWITCHING

-

NPN - Pre-Biased

50V

100mA

35 @ 5mA 10V

500nA

250mV @ 300μA, 10mA

50V

-

-

35

10 k Ω

100mA

10 k Ω

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

Surface Mount

not_compliant

Not Qualified

-

-

-

-

MMUN2134LT1G vs MMUN2211LT1
MMUN2235LT1G

ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

4 Weeks

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

3

Tape & Reel (TR)

2013

e3

yes

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

-

-

-

BIP General Purpose Small Signal

-

246mW

DUAL

GULL WING

NOT SPECIFIED

-

NOT SPECIFIED

-

3

1

NPN

-

-

SWITCHING

Halogen Free

NPN - Pre-Biased

250mV

100mA

80 @ 5mA 10V

500nA

250mV @ 1mA, 10mA

50V

-

-

80

2.2 k Ω

-

47 k Ω

-

-

-

-

-

ROHS3 Compliant

Lead Free

-

-

-

SILICON

SINGLE WITH BUILT-IN RESISTOR

246mW

-

MMUN2134LT1G vs MMUN2235LT1G
MMUN2234LT1G

ON Semiconductor

ACTIVE (Last Updated: 3 hours ago)

4 Weeks

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

3

Tape & Reel (TR)

2004

e3

yes

Active

1 (Unlimited)

3

EAR99

-

150°C

-55°C

BUILT-IN BIAS RESISTOR RATIO IS 2.14

BIP General Purpose Small Signal

50V

246mW

DUAL

GULL WING

260

100mA

40

MMUN22**L

3

1

NPN

Single

246mW

SWITCHING

Halogen Free

NPN - Pre-Biased

50V

100mA

80 @ 5mA 10V

500nA

250mV @ 1mA, 10mA

50V

-

50V

80

22 k Ω

100mA

47 k Ω

-

-

-

-

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

Tin

MMUN2134LT1G vs MMUN2234LT1G