ON Semiconductor MMUN2234LT1G

Name: MMUN2234LT1G
Brand: ON Semiconductor
SKU: 2847244-MMUN2234LT1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MMUN2234LT1G

Manufacturer:: ON Semiconductor

Ventron No:: 2847244-MMUN2234LT1G

Description:: TRANS PREBIAS NPN 0.246W SOT23-3

ECAD Model:

Datasheet:: MMUN2234LT1G

Specifications

ON Semiconductor MMUN2234LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMUN2234LT1G.

Lifecycle Status
ACTIVE (Last Updated: 3 hours ago)
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Packaging
Tape & Reel (TR)
Published
2004
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 2.14
Subcategory
BIP General Purpose Small Signal
Voltage - Rated DC
50V
Max Power Dissipation
246mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
100mA
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
MMUN22**L
Pin Count
3
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
246mW
Transistor Application
SWITCHING
Halogen Free
Halogen Free
Transistor Type
NPN - Pre-Biased
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 5mA 10V
Current - Collector Cutoff (Max)
500nA
Vce Saturation (Max) @ Ib, Ic
250mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage
50V
Max Breakdown Voltage
50V
hFE Min
80
Resistor - Base (R1)
22 k Ω
Continuous Collector Current
100mA
Resistor - Emitter Base (R2)
47 k Ω
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

MMUN2234LT1G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet MMUN2234LT1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MMUN2234LT1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

MMUN2234LT1G More Descriptions

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
Trans Digital BJT NPN 50V 100mA 3-Pin SOT-23 T/R - Tape and Reel
NPN Bipolar Digital Transistor (BRT)
Transistor, NPN, 50V, 0.1A, SOT-23; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Current
Brt Transistor, 50V, 47K/22Kohm, Sot-23, Full Reel; Transistor Polarity:Single Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:22Kohm Rohs Compliant: Yes |Onsemi MMUN2234LT1G
TRANS, NPN, 50V, 0.1A, SOT-23; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 22kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 0.47(Ratio); RF Transistor Case: SOT-23; No. of Pins: 3 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications.

Product Comparison

The three parts on the right have similar specifications to MMUN2234LT1G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Max Operating Temperature

Min Operating Temperature

Additional Feature

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Polarity

Element Configuration

Power Dissipation

Transistor Application

Halogen Free

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Max Breakdown Voltage

hFE Min

Resistor - Base (R1)

Continuous Collector Current

Resistor - Emitter Base (R2)

Radiation Hardening

RoHS Status

Lead Free

Mount

Terminal Finish

Reach Compliance Code

Qualification Status

Transistor Element Material

JESD-30 Code

Configuration

Power - Max

Polarity/Channel Type

JEDEC-95 Code

View Compare
MMUN2234LT1G

ON Semiconductor

ACTIVE (Last Updated: 3 hours ago)

4 Weeks

Tin

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

3

Tape & Reel (TR)

2004

e3

yes

Active

1 (Unlimited)

3

EAR99

150°C

-55°C

BUILT-IN BIAS RESISTOR RATIO IS 2.14

BIP General Purpose Small Signal

50V

246mW

DUAL

GULL WING

260

100mA

40

MMUN22**L

3

1

NPN

Single

246mW

SWITCHING

Halogen Free

NPN - Pre-Biased

50V

100mA

80 @ 5mA 10V

500nA

250mV @ 1mA, 10mA

50V

50V

80

22 k Ω

100mA

47 k Ω

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-
MMUN2211LT1

ON Semiconductor

-

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

3

Cut Tape (CT)

2007

e0

-

Obsolete

1 (Unlimited)

3

EAR99

150°C

-55°C

BUILT-IN BIAS RESISTOR RATIO IS 1

BIP General Purpose Small Signal

50V

246mW

DUAL

GULL WING

240

100mA

30

MMUN22**L

3

1

NPN

Single

246mW

SWITCHING

-

NPN - Pre-Biased

50V

100mA

35 @ 5mA 10V

500nA

250mV @ 300μA, 10mA

50V

-

35

10 k Ω

100mA

10 k Ω

-

Non-RoHS Compliant

Contains Lead

Surface Mount

Tin/Lead (Sn/Pb)

not_compliant

Not Qualified

-

-

-

-

-

-

MMUN2234LT1G vs MMUN2211LT1
MMUN2113LT3

ON Semiconductor

-

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

Tape & Reel (TR)

2008

e0

-

Obsolete

1 (Unlimited)

3

EAR99

-

-

BUILT-IN BIAS RESISTOR RATIO 1

BIP General Purpose Small Signal

-50V

246mW

DUAL

GULL WING

240

-100mA

30

MMUN21**L

3

1

-

-

-

SWITCHING

-

PNP - Pre-Biased

250mV

100mA

80 @ 5mA 10V

500nA

250mV @ 300μA, 10mA

50V

-

-

47 k Ω

-

47 k Ω

-

Non-RoHS Compliant

Contains Lead

Surface Mount

Tin/Lead (Sn/Pb)

not_compliant

Not Qualified

SILICON

R-PDSO-G3

SINGLE WITH BUILT-IN RESISTOR

246mW

PNP

TO-236AB

MMUN2234LT1G vs MMUN2113LT3
MMUN2231LT1

ON Semiconductor

-

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

Tape & Reel (TR)

2007

e0

-

Obsolete

1 (Unlimited)

3

EAR99

150°C

-55°C

BUILT-IN BIAS RESISTOR RATIO IS 1

BIP General Purpose Small Signal

50V

246mW

DUAL

GULL WING

240

100mA

30

MMUN22**L

3

1

NPN

Single

246mW

SWITCHING

-

NPN - Pre-Biased

250mV

100mA

8 @ 5mA 10V

500nA

250mV @ 5mA, 10mA

50V

-

8

2.2 k Ω

100mA

2.2 k Ω

-

Non-RoHS Compliant

Contains Lead

Surface Mount

Tin/Lead (Sn/Pb)

not_compliant

Not Qualified

-

R-PDSO-G3

-

-

-

TO-236AB

MMUN2234LT1G vs MMUN2231LT1