ON Semiconductor MMUN2113LT3G
- Part Number:
- MMUN2113LT3G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3585603-MMUN2113LT3G
- Description:
- TRANS PREBIAS PNP 246MW SOT23-3
- Datasheet:
- MMUN2113LT3G
ON Semiconductor MMUN2113LT3G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMUN2113LT3G.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureBUILT-IN BIAS RESISTOR RATIO 1
- SubcategoryBIP General Purpose Small Signal
- Voltage - Rated DC-50V
- Max Power Dissipation246mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-100mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMMUN21**L
- Pin Count3
- Max Output Current100mA
- Operating Supply Voltage50V
- Number of Elements1
- PolarityPNP
- Element ConfigurationSingle
- Power Dissipation400mW
- Transistor ApplicationSWITCHING
- Halogen FreeHalogen Free
- Transistor TypePNP - Pre-Biased
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA 10V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 300μA, 10mA
- Collector Emitter Breakdown Voltage50V
- Collector Emitter Saturation Voltage250mV
- hFE Min80
- Resistor - Base (R1)47 k Ω
- Continuous Collector Current100mA
- Resistor - Emitter Base (R2)47 k Ω
- Height940μm
- Length2.9mm
- Width1.3mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMUN2113LT3G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet MMUN2113LT3G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MMUN2113LT3G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet MMUN2113LT3G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MMUN2113LT3G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MMUN2113LT3G More Descriptions
MMUN Series 50 V 100 mA 47 kOhm PNP Silicon Bias Resistor Transistor - SOT-23-3
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
Trans Digital BJT PNP 50V 100mA 3-Pin SOT-23 T/R - Tape and Reel
PNP Bipolar Digital Transistor (BRT)
MMUN2113LT3G PNP Digi Transistor, 100mA 50 V 47 kOhm, Ratio Of 1, 3-Pin SOT-23 | ON Semiconductor MMUN2113LT3G
Brt Transistor, 50V, 47K/47Kohm, Sot-23, Full Reel; Transistor Polarity:Single Pnp; Collector Emitter Voltage Max Npn:-; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:- Rohs Compliant: Yes |Onsemi MMUN2113LT3G
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
Trans Digital BJT PNP 50V 100mA 3-Pin SOT-23 T/R - Tape and Reel
PNP Bipolar Digital Transistor (BRT)
MMUN2113LT3G PNP Digi Transistor, 100mA 50 V 47 kOhm, Ratio Of 1, 3-Pin SOT-23 | ON Semiconductor MMUN2113LT3G
Brt Transistor, 50V, 47K/47Kohm, Sot-23, Full Reel; Transistor Polarity:Single Pnp; Collector Emitter Voltage Max Npn:-; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:- Rohs Compliant: Yes |Onsemi MMUN2113LT3G
The three parts on the right have similar specifications to MMUN2113LT3G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountMax Output CurrentOperating Supply VoltageNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationHalogen FreeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltagehFE MinResistor - Base (R1)Continuous Collector CurrentResistor - Emitter Base (R2)HeightLengthWidthRadiation HardeningRoHS StatusLead FreeMountReach Compliance CodeQualification StatusTransistor Element MaterialConfigurationPower - MaxJESD-30 CodeJEDEC-95 CodeView Compare
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MMUN2113LT3GACTIVE (Last Updated: 2 days ago)4 WeeksSurface MountTO-236-3, SC-59, SOT-23-3YES3Tape & Reel (TR)2008e3yesActive1 (Unlimited)3EAR99Tin (Sn)150°C-55°CBUILT-IN BIAS RESISTOR RATIO 1BIP General Purpose Small Signal-50V246mWDUALGULL WING260-100mA40MMUN21**L3100mA50V1PNPSingle400mWSWITCHINGHalogen FreePNP - Pre-Biased50V100mA80 @ 5mA 10V500nA250mV @ 300μA, 10mA50V250mV8047 k Ω100mA47 k Ω940μm2.9mm1.3mmNoROHS3 CompliantLead Free---------
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--Surface MountTO-236-3, SC-59, SOT-23-3-3Cut Tape (CT)2007e0-Obsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)150°C-55°CBUILT-IN BIAS RESISTOR RATIO IS 1BIP General Purpose Small Signal50V246mWDUALGULL WING240100mA30MMUN22**L3--1NPNSingle246mWSWITCHING-NPN - Pre-Biased50V100mA35 @ 5mA 10V500nA250mV @ 300μA, 10mA50V-3510 k Ω100mA10 k Ω----Non-RoHS CompliantContains LeadSurface Mountnot_compliantNot Qualified-----
-
ACTIVE (Last Updated: 1 day ago)4 WeeksSurface MountTO-236-3, SC-59, SOT-23-3YES3Tape & Reel (TR)2013e3yesActive1 (Unlimited)3EAR99Tin (Sn)---BIP General Purpose Small Signal-246mWDUALGULL WINGNOT SPECIFIED-NOT SPECIFIED-3--1NPN--SWITCHINGHalogen FreeNPN - Pre-Biased250mV100mA80 @ 5mA 10V500nA250mV @ 1mA, 10mA50V-802.2 k Ω-47 k Ω----ROHS3 CompliantLead Free---SILICONSINGLE WITH BUILT-IN RESISTOR246mW--
-
--Surface MountTO-236-3, SC-59, SOT-23-3--Tape & Reel (TR)2007e0-Obsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)150°C-55°CBUILT-IN BIAS RESISTOR RATIO IS 1BIP General Purpose Small Signal50V246mWDUALGULL WING240100mA30MMUN22**L3--1NPNSingle246mWSWITCHING-NPN - Pre-Biased250mV100mA8 @ 5mA 10V500nA250mV @ 5mA, 10mA50V-82.2 k Ω100mA2.2 k Ω----Non-RoHS CompliantContains LeadSurface Mountnot_compliantNot Qualified---R-PDSO-G3TO-236AB
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