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MMUN2130LT1G

ON Semiconductor MMUN2130LT1G

Part Number:
MMUN2130LT1G
Manufacturer:
ON Semiconductor
Ventron No:
2472887-MMUN2130LT1G
Description:
TRANS PREBIAS PNP 246MW SOT23-3
ECAD Model:
Datasheet:
MMUN2130LT1G

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Specifications
ON Semiconductor MMUN2130LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMUN2130LT1G.
  • Lifecycle Status
    ACTIVE (Last Updated: 11 hours ago)
  • Factory Lead Time
    2 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Number of Pins
    3
  • Packaging
    Tape & Reel (TR)
  • Published
    2005
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Additional Feature
    BUILT-IN BIAS RESISTOR RATIO 1
  • Subcategory
    BIP General Purpose Small Signal
  • Voltage - Rated DC
    -50V
  • Max Power Dissipation
    246mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -100mA
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MMUN21**L
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Polarity
    PNP
  • Element Configuration
    Single
  • Power Dissipation
    246mW
  • Transistor Application
    SWITCHING
  • Halogen Free
    Halogen Free
  • Transistor Type
    PNP - Pre-Biased
  • Collector Emitter Voltage (VCEO)
    250mV
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    3 @ 5mA 10V
  • Current - Collector Cutoff (Max)
    500nA
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 5mA, 10mA
  • Collector Emitter Breakdown Voltage
    50V
  • Resistor - Base (R1)
    1 k Ω
  • Continuous Collector Current
    100mA
  • Resistor - Emitter Base (R2)
    1 k Ω
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MMUN2130LT1G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet MMUN2130LT1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MMUN2130LT1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MMUN2130LT1G More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
Trans Digital BJT PNP 50V 100mA 400mW Automotive 3-Pin SOT-23 T/R
PNP Bipolar Digital Transistor (BRT)
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP
Product Comparison
The three parts on the right have similar specifications to MMUN2130LT1G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Max Operating Temperature
    Min Operating Temperature
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Qualification Status
    Number of Elements
    Polarity
    Element Configuration
    Power Dissipation
    Transistor Application
    Halogen Free
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Resistor - Base (R1)
    Continuous Collector Current
    Resistor - Emitter Base (R2)
    RoHS Status
    Lead Free
    Max Output Current
    Operating Supply Voltage
    Collector Emitter Saturation Voltage
    hFE Min
    Height
    Length
    Width
    Radiation Hardening
    Transistor Element Material
    Configuration
    Power - Max
    Contact Plating
    Max Breakdown Voltage
    View Compare
  • MMUN2130LT1G
    MMUN2130LT1G
    ON Semiconductor
    ACTIVE (Last Updated: 11 hours ago)
    2 Weeks
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    3
    Tape & Reel (TR)
    2005
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    150°C
    -55°C
    BUILT-IN BIAS RESISTOR RATIO 1
    BIP General Purpose Small Signal
    -50V
    246mW
    DUAL
    GULL WING
    260
    -100mA
    40
    MMUN21**L
    3
    Not Qualified
    1
    PNP
    Single
    246mW
    SWITCHING
    Halogen Free
    PNP - Pre-Biased
    250mV
    100mA
    3 @ 5mA 10V
    500nA
    250mV @ 5mA, 10mA
    50V
    1 k Ω
    100mA
    1 k Ω
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MMUN2113LT3G
    MMUN2113LT3G
    ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    4 Weeks
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    3
    Tape & Reel (TR)
    2008
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    150°C
    -55°C
    BUILT-IN BIAS RESISTOR RATIO 1
    BIP General Purpose Small Signal
    -50V
    246mW
    DUAL
    GULL WING
    260
    -100mA
    40
    MMUN21**L
    3
    -
    1
    PNP
    Single
    400mW
    SWITCHING
    Halogen Free
    PNP - Pre-Biased
    50V
    100mA
    80 @ 5mA 10V
    500nA
    250mV @ 300μA, 10mA
    50V
    47 k Ω
    100mA
    47 k Ω
    ROHS3 Compliant
    Lead Free
    100mA
    50V
    250mV
    80
    940μm
    2.9mm
    1.3mm
    No
    -
    -
    -
    -
    -
    MMUN2130LT1G vs MMUN2113LT3G
  • MMUN2235LT1G
    MMUN2235LT1G
    ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    4 Weeks
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    3
    Tape & Reel (TR)
    2013
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    -
    -
    -
    BIP General Purpose Small Signal
    -
    246mW
    DUAL
    GULL WING
    NOT SPECIFIED
    -
    NOT SPECIFIED
    -
    3
    -
    1
    NPN
    -
    -
    SWITCHING
    Halogen Free
    NPN - Pre-Biased
    250mV
    100mA
    80 @ 5mA 10V
    500nA
    250mV @ 1mA, 10mA
    50V
    2.2 k Ω
    -
    47 k Ω
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    80
    -
    -
    -
    -
    SILICON
    SINGLE WITH BUILT-IN RESISTOR
    246mW
    -
    -
    MMUN2130LT1G vs MMUN2235LT1G
  • MMUN2234LT1G
    MMUN2234LT1G
    ON Semiconductor
    ACTIVE (Last Updated: 3 hours ago)
    4 Weeks
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    3
    Tape & Reel (TR)
    2004
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    150°C
    -55°C
    BUILT-IN BIAS RESISTOR RATIO IS 2.14
    BIP General Purpose Small Signal
    50V
    246mW
    DUAL
    GULL WING
    260
    100mA
    40
    MMUN22**L
    3
    -
    1
    NPN
    Single
    246mW
    SWITCHING
    Halogen Free
    NPN - Pre-Biased
    50V
    100mA
    80 @ 5mA 10V
    500nA
    250mV @ 1mA, 10mA
    50V
    22 k Ω
    100mA
    47 k Ω
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    80
    -
    -
    -
    No
    -
    -
    -
    Tin
    50V
    MMUN2130LT1G vs MMUN2234LT1G
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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