ON Semiconductor MMUN2133LT1G

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
MMUN Series 50V 100 mA 47 kOhm PNP Silicon Bias Resistor Transistor SOT-23-3
Trans Digital BJT PNP 50V 100mA 400mW Automotive 3-Pin SOT-23 T/R
PNP Bipolar Digital Transistor (BRT)
PNP - Pre-Biased 246mW 100mA 50V SOT-23(SOT-23-3) Digital Transistors ROHS
MMUN2133LT1G PNP Digital Transistor,100mA 50V 4.7 kOhm, Ratio Of 0.1,3-Pin SOT-23 | ON Semiconductor MMUN2133LT1G
TRANSISTOR, RF, PNP, -50V, SOT-23-3; Digital Transistor Polarity: Single PNP; Collector Emitter Voltage V(br)ceo: -50V; Continuous Collector Current Ic: -100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 10(Ratio); RF Transistor Case: SOT-23; No. of Pins: 3 Pin; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); No. of Pins: 3Pins
Bipolar Transistor, Pnp, -50V, Full Reel; Transistor Polarity:Single Pnp; Collector Emitter Voltage Max Npn:-; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:4.7Kohm; Product Range:-Rohs Compliant: Yes |Onsemi MMUN2133LT1G.
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package whi designed for low power surface mount applications.